CLF1G0060S-10U

CLF1G0060S-10U Overview

Tube is the packaging method for this product SMD/SMT Mounting-Style Wide - 65 C to + 150 C operating temperature range for diverse applications SOT1227B GaN Si is the technology used. Configuration Single Transistor type: HEMT The device offers a 14.5 dB of 26dB. Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C The operating frequency is 3.5 GHz. The ID of continuous drain current is 1.7 A. This product has a Vds-Drain-Source-Breakdown-Voltageof 150 V. This product has a - 2 V Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel. This product features a 380 mS of 500 S for high performance. 3 V Vgs-Gate-Source Breakdown Voltage

CLF1G0060S-10U Image

CLF1G0060S-10U Specifications

• Manufacturer NXP Semiconductors
• Product Category Transistors - FETs, MOSFETs - Single
• Packaging Tube
• Mounting-Style SMD/SMT
• Operating-Temperature-Range - 65 C to + 150 C
• Package-Case SOT1227B
• Technology GaN Si
• Configuration Single
• Transistor-Type HEMT
• Gain 14.5 dB
• Maximum-Operating-Temperature + 150 C
• Minimum-Operating-Temperature - 65 C
• Operating-Frequency 3.5 GHz
• Id-Continuous-Drain-Current 1.7 A
• Vds-Drain-Source-Breakdown-Voltage 150 V
• Vgs-th-Gate-Source-Threshold-Voltage - 2 V
• Transistor-Polarity N-Channel
• Forward-Transconductance-Min 380 mS
• Vgs-Gate-Source-Breakdown-Voltage 3 V

CLF1G0060S-10U FAQ

• A: Is the cutoff frequency of the product Packaging?

  Q: Yes, the product's Packaging is indeed Tube

• A: At what frequency does the Mounting-Style?

  Q: The product Mounting-Style is SMD/SMT.

• A: At what frequency does the Operating-Temperature-Range?

  Q: The product Operating-Temperature-Range is - 65 C to + 150 C.

• A: Is the cutoff frequency of the product Package-Case?

  Q: Yes, the product's Package-Case is indeed SOT1227B

• A: What is the Technology of the product?

  Q: The Technology of the product is GaN Si.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Transistor-Type?

  Q: Yes, the product's Transistor-Type is indeed HEMT

• A: Is the cutoff frequency of the product Gain?

  Q: Yes, the product's Gain is indeed 14.5 dB

• A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

  Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

• A: What is the Minimum-Operating-Temperature of the product?

  Q: The Minimum-Operating-Temperature of the product is - 65 C.

• A: What is the Operating-Frequency of the product?

  Q: The Operating-Frequency of the product is 3.5 GHz.

• A: At what frequency does the Id-Continuous-Drain-Current?

  Q: The product Id-Continuous-Drain-Current is 1.7 A.

• A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

  Q: The product Vds-Drain-Source-Breakdown-Voltage is 150 V.

• A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

  Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed - 2 V

• A: What is the Transistor-Polarity of the product?

  Q: The Transistor-Polarity of the product is N-Channel.

• A: Is the cutoff frequency of the product Forward-Transconductance-Min?

  Q: Yes, the product's Forward-Transconductance-Min is indeed 380 mS

• A: What is the Vgs-Gate-Source-Breakdown-Voltage of the product?

  Q: The Vgs-Gate-Source-Breakdown-Voltage of the product is 3 V.