| Mfr. #: | BUL1102EFP |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | Bipolar Transistors - BJT IGBT & Power Bipola |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | BUL1102EFP Scheda dati |
Product belongs to the BUL1102E series. Tube is the packaging method for this product Weight of 0.090478 oz Through Hole Mounting-Style TO-220-3 Full Pack Through Hole mounting type Supplier device package: TO-220 Full Pack Configuration Single Transistor type: NPN Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 450V DC current gain minimum (hFE) of Ic/Vce at 12 @ 2A, 5V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 400mA, 2A Power-off control: 30 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 450 V The transistor polarity is NPN. 12 V rating of 5 V Max DC collector current: 4 A This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 35 at 250 mA at 5 V 12 at 2 A at 5 V.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
BUL1102EFP Specifications
A: What is the Series of the product?
Q: The Series of the product is BUL1102E.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Unit-Weight?
Q: Yes, the product's Unit-Weight is indeed 0.090478 oz
A: What is the Mounting-Style of the product?
Q: The Mounting-Style of the product is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-220-3 Full Pack.
A: Is the cutoff frequency of the product Mounting-Type?
Q: Yes, the product's Mounting-Type is indeed Through Hole
A: At what frequency does the Supplier-Device-Package?
Q: The product Supplier-Device-Package is TO-220 Full Pack.
A: At what frequency does the Configuration?
Q: The product Configuration is Single.
A: Is the cutoff frequency of the product Transistor-Type?
Q: Yes, the product's Transistor-Type is indeed NPN
A: Is the cutoff frequency of the product Current-Collector-Ic-Max?
Q: Yes, the product's Current-Collector-Ic-Max is indeed 4A
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 450V
A: At what frequency does the DC-Current-Gain-hFE-Min-Ic-Vce?
Q: The product DC-Current-Gain-hFE-Min-Ic-Vce is 12 @ 2A, 5V.
A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?
Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 1.5V @ 400mA, 2A
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 30 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 450 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 12 V.
A: Is the cutoff frequency of the product Maximum-DC-Collector-Current?
Q: Yes, the product's Maximum-DC-Collector-Current is indeed 4 A
A: What is the Continuous-Collector-Current of the product?
Q: The Continuous-Collector-Current of the product is 4 A.
A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?
Q: The product DC-Collector-Base-Gain-hfe-Min is 35 at 250 mA at 5 V 12 at 2 A at 5 V.