| Mfr. #: | BD140-16 |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | Bipolar Transistors - BJT PNP Silicon Trnsist |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | BD140-16 Scheda dati |


Product belongs to the BD140 series. Tube is the packaging method for this product Through Hole Mounting-Style TO-225AA, TO-126-3 Through Hole mounting type Supplier device package: SOT-32 Configuration Single Transistor type: PNP Maximum current collector Ic is 1.5A . Maximum collector-emitter breakdown voltage of 80V DC current gain minimum (hFE) of Ic/Vce at 40 @ 2V, 150MA. Product Attribute: Vce-Saturation-Max-Ib-Ic: 500mV @ 50mA, 500mA Power-off control: 1250 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to - 80 V The transistor polarity is PNP. The - 80 V voltage rating is 40 V. - 5 V rating of 5 V Max DC collector current: 1.5 A Minimum hfe for DC collector-base gain is 100.

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BD140-16 Specifications
A: At what frequency does the Series?
Q: The product Series is BD140.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Mounting-Style?
Q: The product Mounting-Style is Through Hole.
A: At what frequency does the Package-Case?
Q: The product Package-Case is TO-225AA, TO-126-3.
A: At what frequency does the Mounting-Type?
Q: The product Mounting-Type is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed SOT-32
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is PNP.
A: What is the Current-Collector-Ic-Max of the product?
Q: The Current-Collector-Ic-Max of the product is 1.5A.
A: What is the Voltage-Collector-Emitter-Breakdown-Max of the product?
Q: The Voltage-Collector-Emitter-Breakdown-Max of the product is 80V.
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 40 @ 2V, 150MA
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 500mV @ 50mA, 500mA.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 1250 mW.
A: At what frequency does the Maximum-Operating-Temperature?
Q: The product Maximum-Operating-Temperature is + 150 C.
A: What is the Minimum-Operating-Temperature of the product?
Q: The Minimum-Operating-Temperature of the product is - 65 C.
A: Is the cutoff frequency of the product Collector-Emitter-Voltage-VCEO-Max?
Q: Yes, the product's Collector-Emitter-Voltage-VCEO-Max is indeed - 80 V
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed PNP
A: What is the Collector-Base-Voltage-VCBO of the product?
Q: The Collector-Base-Voltage-VCBO of the product is - 80 V.
A: At what frequency does the Emitter-Base-Voltage-VEBO?
Q: The product Emitter-Base-Voltage-VEBO is - 5 V.
A: What is the Maximum-DC-Collector-Current of the product?
Q: The Maximum-DC-Collector-Current of the product is 1.5 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 100.