AFT18P350-4S2LR6

Mfr. #: AFT18P350-4S2LR6
Produttore: NXP Semiconductors
Descrizione: RF MOSFET Transistors AIRFAST 1.8-2.0GHZ C
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: AFT18P350-4S2LR6 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
AFT18P350-4S2LR6 Overview

Product belongs to the AFT18P350_4S2L series. Type: RF Power MOSFET Reel is the packaging method for this product Weight of 0.300472 oz SMD/SMT Mounting-Style NI-1230-4 Si is the technology used. The device offers a 16.1 dB of 26dB. Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 1805 MHz to 1880 MHz. This product's 1.2 V. The ID of continuous drain current is 1000 mA. This product has a Vds-Drain-Source-Breakdown-Voltageof 65 V. This product has a 1.9 V Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel.

AFT18P350-4S2LR6 Image

AFT18P350-4S2LR6

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AFT18P350-4S2LR6 Specifications
  • Manufacturer NXP / Freescale
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series AFT18P350_4S2L
  • Type RF Power MOSFET
  • Packaging Reel
  • Unit-Weight 0.300472 oz
  • Mounting-Style SMD/SMT
  • Package-Case NI-1230-4
  • Technology Si
  • Gain 16.1 dB
  • Output-Power 63 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 1805 MHz to 1880 MHz
  • Vgs-Gate-Source-Voltage 1.2 V
  • Id-Continuous-Drain-Current 1000 mA
  • Vds-Drain-Source-Breakdown-Voltage 65 V
  • Vgs-th-Gate-Source-Threshold-Voltage 1.9 V
  • Transistor-Polarity N-Channel

AFT18P350-4S2LR6

AFT18P350-4S2LR6 Specifications

AFT18P350-4S2LR6 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is AFT18P350_4S2L.

  • A: At what frequency does the Type?

    Q: The product Type is RF Power MOSFET.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Reel.

  • A: What is the Unit-Weight of the product?

    Q: The Unit-Weight of the product is 0.300472 oz.

  • A: At what frequency does the Mounting-Style?

    Q: The product Mounting-Style is SMD/SMT.

  • A: What is the Package-Case of the product?

    Q: The Package-Case of the product is NI-1230-4.

  • A: What is the Technology of the product?

    Q: The Technology of the product is Si.

  • A: Is the cutoff frequency of the product Gain?

    Q: Yes, the product's Gain is indeed 16.1 dB

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: At what frequency does the Minimum-Operating-Temperature?

    Q: The product Minimum-Operating-Temperature is - 40 C.

  • A: At what frequency does the Operating-Frequency?

    Q: The product Operating-Frequency is 1805 MHz to 1880 MHz.

  • A: At what frequency does the Vgs-Gate-Source-Voltage?

    Q: The product Vgs-Gate-Source-Voltage is 1.2 V.

  • A: What is the Id-Continuous-Drain-Current of the product?

    Q: The Id-Continuous-Drain-Current of the product is 1000 mA.

  • A: Is the cutoff frequency of the product Vds-Drain-Source-Breakdown-Voltage?

    Q: Yes, the product's Vds-Drain-Source-Breakdown-Voltage is indeed 65 V

  • A: Is the cutoff frequency of the product Vgs-th-Gate-Source-Threshold-Voltage?

    Q: Yes, the product's Vgs-th-Gate-Source-Threshold-Voltage is indeed 1.9 V

  • A: What is the Transistor-Polarity of the product?

    Q: The Transistor-Polarity of the product is N-Channel.

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