AFT05MS031NR1

Mfr. #: AFT05MS031NR1
Produttore: NXP Semiconductors
Descrizione: FET RF 40V 520MHZ TO-270-2
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: AFT05MS031NR1 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
AFT05MS031NR1 Overview

Product belongs to the AFT05MS031N series. Type: RF Power MOSFET Reel is the packaging method for this product Weight of 0.018679 oz SMD/SMT Mounting-Style TO-270-2 Si is the technology used. The device offers a 19 dB of 26dB. Power-off control: 294 W Maximum operating temperature of + 150 C Minimum operating temperature: - 40 C The operating frequency is 136 MHz to 520 MHz. This product's - 6 V + 12 V. This product has a Vds-Drain-Source-Breakdown-Voltageof - 0.5 V + 40 V. This product has a 2.1 VDC Vgs-th gate-source threshold voltage for efficient power management. The transistor polarity is N-Channel. This product features a 5.8 S of 500 S for high performance.

AFT05MS031NR1 Image

AFT05MS031NR1

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AFT05MS031NR1 Specifications
  • Manufacturer NXP / Freescale
  • Product Category Transistors - FETs, MOSFETs - Single
  • Series AFT05MS031N
  • Type RF Power MOSFET
  • Packaging Reel
  • Unit-Weight 0.018679 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-270-2
  • Technology Si
  • Gain 19 dB
  • Output-Power 33 W
  • Pd-Power-Dissipation 294 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 40 C
  • Operating-Frequency 136 MHz to 520 MHz
  • Vgs-Gate-Source-Voltage - 6 V + 12 V
  • Vds-Drain-Source-Breakdown-Voltage - 0.5 V + 40 V
  • Vgs-th-Gate-Source-Threshold-Voltage 2.1 VDC
  • Transistor-Polarity N-Channel
  • Forward-Transconductance-Min 5.8 S

AFT05MS031NR1

AFT05MS031NR1 Specifications

AFT05MS031NR1 FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is AFT05MS031N.

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: Is the cutoff frequency of the product Packaging?

    Q: Yes, the product's Packaging is indeed Reel

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.018679 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: At what frequency does the Package-Case?

    Q: The product Package-Case is TO-270-2.

  • A: At what frequency does the Technology?

    Q: The product Technology is Si.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 19 dB.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 294 W.

  • A: Is the cutoff frequency of the product Maximum-Operating-Temperature?

    Q: Yes, the product's Maximum-Operating-Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 40 C

  • A: What is the Operating-Frequency of the product?

    Q: The Operating-Frequency of the product is 136 MHz to 520 MHz.

  • A: What is the Vgs-Gate-Source-Voltage of the product?

    Q: The Vgs-Gate-Source-Voltage of the product is - 6 V + 12 V.

  • A: At what frequency does the Vds-Drain-Source-Breakdown-Voltage?

    Q: The product Vds-Drain-Source-Breakdown-Voltage is - 0.5 V + 40 V.

  • A: At what frequency does the Vgs-th-Gate-Source-Threshold-Voltage?

    Q: The product Vgs-th-Gate-Source-Threshold-Voltage is 2.1 VDC.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed N-Channel

  • A: At what frequency does the Forward-Transconductance-Min?

    Q: The product Forward-Transconductance-Min is 5.8 S.

1680 In Stock
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Quantità
Prezzo unitario
est. Prezzo
1
10,64 USD
10,64 USD
10
10,10 USD
101,03 USD
100
9,57 USD
957,15 USD
500
9,04 USD
4 519,90 USD
1000
8,51 USD
8 508,00 USD
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