STGY80H65DFB

STGY80H65DFB Overview

This product is manufactured by STMicroelectronics. Max247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 1.9 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 120 A 469 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 80 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 30 of 100 IGBTs as subcategory

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STGY80H65DFB Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: Max247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 650 V
• Collector-Emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 120 A
• Pd - Power Dissipation: 469 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGY80H65
• Packaging: Tube
• Continuous Collector Current Ic Max: 80 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 30
• Subcategory: IGBTs

STGY80H65DFB FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is STMicroelectronics.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is Max247-3.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: At what frequency does the Configuration?

  Q: The product Configuration is Single.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 650 V

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 1.9 V.

• A: At what frequency does the Maximum Gate Emitter Voltage?

  Q: The product Maximum Gate Emitter Voltage is 20 V.

• A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

  Q: Yes, the product's Continuous Collector Current at 25 C is indeed 120 A

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 469 W.

• A: Is the cutoff frequency of the product Minimum Operating Temperature?

  Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 175 C.

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: What is the Continuous Collector Current Ic Max of the product?

  Q: The Continuous Collector Current Ic Max of the product is 80 A.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: At what frequency does the Gate-Emitter Leakage Current?

  Q: The product Gate-Emitter Leakage Current is 250 nA.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed IGBT Transistors

• A: At what frequency does the Factory Pack Quantity?

  Q: The product Factory Pack Quantity is 30.

• A: At what frequency does the Subcategory?

  Q: The product Subcategory is IGBTs.