STGWT30V60DF

STGWT30V60DF Overview

This product is manufactured by STMicroelectronics. TO-3P package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 600 V. The 2.35 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 258 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 300 of 100 IGBTs as subcategory 1. 0.238311 oz of Unit Weight

STGWT30V60DF Image

STGWT30V60DF Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-3P
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 600 V
• Collector-Emitter Saturation Voltage: 2.35 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 60 A
• Pd - Power Dissipation: 258 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGWT30V60DF
• Packaging: Tube
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 300
• Subcategory: IGBTs
• Unit Weight: 0.238311 oz

STGWT30V60DF FAQ

• A: At what frequency does the Manufacturer?

  Q: The product Manufacturer is STMicroelectronics.

• A: What is the Package / Case of the product?

  Q: The Package / Case of the product is TO-3P.

• A: At what frequency does the Mounting Style?

  Q: The product Mounting Style is Through Hole.

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 600 V

• A: At what frequency does the Collector-Emitter Saturation Voltage?

  Q: The product Collector-Emitter Saturation Voltage is 2.35 V.

• A: What is the Maximum Gate Emitter Voltage of the product?

  Q: The Maximum Gate Emitter Voltage of the product is 20 V.

• A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

  Q: Yes, the product's Continuous Collector Current at 25 C is indeed 60 A

• A: At what frequency does the Pd - Power Dissipation?

  Q: The product Pd - Power Dissipation is 258 W.

• A: At what frequency does the Minimum Operating Temperature?

  Q: The product Minimum Operating Temperature is - 55 C.

• A: Is the cutoff frequency of the product Maximum Operating Temperature?

  Q: Yes, the product's Maximum Operating Temperature is indeed + 175 C

• A: At what frequency does the Packaging?

  Q: The product Packaging is Tube.

• A: Is the cutoff frequency of the product Brand?

  Q: Yes, the product's Brand is indeed STMicroelectronics

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: What is the Product Type of the product?

  Q: The Product Type of the product is IGBT Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 300.

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed IGBTs

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.238311 oz.