STGWT28IH125DF

STGWT28IH125DF Overview

This product is manufactured by STMicroelectronics. TO-3P-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 1.25 kV. The 2.65 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 60 A 375 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 30 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 300 of 100 IGBTs as subcategory 1. 0.245577 oz of Unit Weight

STGWT28IH125DF Image

STGWT28IH125DF Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO-3P-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.25 kV
• Collector-Emitter Saturation Voltage: 2.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 60 A
• Pd - Power Dissipation: 375 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGWT28IH125DF
• Packaging: Tube
• Continuous Collector Current Ic Max: 30 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 300
• Subcategory: IGBTs
• Unit Weight: 0.245577 oz

STGWT28IH125DF FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed TO-3P-3

• A: Is the cutoff frequency of the product Mounting Style?

  Q: Yes, the product's Mounting Style is indeed Through Hole

• A: What is the Configuration of the product?

  Q: The Configuration of the product is Single.

• A: At what frequency does the Collector- Emitter Voltage VCEO Max?

  Q: The product Collector- Emitter Voltage VCEO Max is 1.25 kV.

• A: What is the Collector-Emitter Saturation Voltage of the product?

  Q: The Collector-Emitter Saturation Voltage of the product is 2.65 V.

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: What is the Continuous Collector Current at 25 C of the product?

  Q: The Continuous Collector Current at 25 C of the product is 60 A.

• A: What is the Pd - Power Dissipation of the product?

  Q: The Pd - Power Dissipation of the product is 375 W.

• A: At what frequency does the Minimum Operating Temperature?

  Q: The product Minimum Operating Temperature is - 55 C.

• A: What is the Maximum Operating Temperature of the product?

  Q: The Maximum Operating Temperature of the product is + 175 C.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Continuous Collector Current Ic Max?

  Q: The product Continuous Collector Current Ic Max is 30 A.

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: Is the cutoff frequency of the product Product Type?

  Q: Yes, the product's Product Type is indeed IGBT Transistors

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 300

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is IGBTs.

• A: Is the cutoff frequency of the product Unit Weight?

  Q: Yes, the product's Unit Weight is indeed 0.245577 oz