STGWA60H65DFB

Mfr. #: STGWA60H65DFB
Produttore: STMicroelectronics
Descrizione: IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: STGWA60H65DFB Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
STGWA60H65DFB Overview

This product is manufactured by STMicroelectronics. TO-247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 650 V. The 2 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 80 A 375 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Max continuous collector current of 80 A The height of the product is 5.15 mm. 20.15 mm long STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 1.340411 oz of Unit Weight

STGWA60H65DFB Image

STGWA60H65DFB

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

STGWA60H65DFB Specifications
  • Manufacturer: STMicroelectronics
  • Product Category: IGBT Transistors
  • RoHS: Y
  • Technology: Si
  • Package / Case: TO-247-3
  • Mounting Style: Through Hole
  • Configuration: Single
  • Collector- Emitter Voltage VCEO Max: 650 V
  • Collector-Emitter Saturation Voltage: 2 V
  • Maximum Gate Emitter Voltage: 20 V
  • Continuous Collector Current at 25 C: 80 A
  • Pd - Power Dissipation: 375 W
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Series: STGWA60H65DFB
  • Continuous Collector Current Ic Max: 80 A
  • Height: 5.15 mm
  • Length: 20.15 mm
  • Operating Temperature Range: - 55 C to + 175 C
  • Width: 15.75 mm
  • Brand: STMicroelectronics
  • Continuous Collector Current: 80 A
  • Gate-Emitter Leakage Current: 250 nA
  • Product Type: IGBT Transistors
  • Factory Pack Quantity: 600
  • Subcategory: IGBTs
  • Unit Weight: 1.340411 oz

STGWA60H65DFB

STGWA60H65DFB Specifications

STGWA60H65DFB FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is STMicroelectronics.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is TO-247-3.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: At what frequency does the Collector- Emitter Voltage VCEO Max?

    Q: The product Collector- Emitter Voltage VCEO Max is 650 V.

  • A: What is the Collector-Emitter Saturation Voltage of the product?

    Q: The Collector-Emitter Saturation Voltage of the product is 2 V.

  • A: What is the Maximum Gate Emitter Voltage of the product?

    Q: The Maximum Gate Emitter Voltage of the product is 20 V.

  • A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

    Q: Yes, the product's Continuous Collector Current at 25 C is indeed 80 A

  • A: At what frequency does the Pd - Power Dissipation?

    Q: The product Pd - Power Dissipation is 375 W.

  • A: Is the cutoff frequency of the product Minimum Operating Temperature?

    Q: Yes, the product's Minimum Operating Temperature is indeed - 55 C

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 175 C.

  • A: At what frequency does the Continuous Collector Current Ic Max?

    Q: The product Continuous Collector Current Ic Max is 80 A.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 5.15 mm

  • A: At what frequency does the Length?

    Q: The product Length is 20.15 mm.

  • A: What is the Brand of the product?

    Q: The Brand of the product is STMicroelectronics.

  • A: Is the cutoff frequency of the product Gate-Emitter Leakage Current?

    Q: Yes, the product's Gate-Emitter Leakage Current is indeed 250 nA

  • A: At what frequency does the Product Type?

    Q: The product Product Type is IGBT Transistors.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 600.

  • A: Is the cutoff frequency of the product Subcategory?

    Q: Yes, the product's Subcategory is indeed IGBTs

  • A: What is the Unit Weight of the product?

    Q: The Unit Weight of the product is 1.340411 oz.

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Quantità
Prezzo unitario
est. Prezzo
1
5,29 USD
5,29 USD
10
4,50 USD
45,00 USD
100
3,90 USD
390,00 USD
250
3,70 USD
925,00 USD
500
3,32 USD
1 660,00 USD
1000
2,80 USD
2 800,00 USD
2500
2,66 USD
6 650,00 USD
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