STGW25S120DF3

STGW25S120DF3 Overview

This product is manufactured by STMicroelectronics. TO247-3 package/case type is utilized by this product. The product can operate at a maximum temperature of Through Hole. This product has a Single configuration. The maximum 1.2 kV. The 1.6 V. Maximum gate emitter voltage is 20 V Continuous Collector Current at 25 C is 50 A 375 W The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. Tube packaging for easy dispensing Max continuous collector current of 25 A STMicroelectronics is a trusted brand for quality electronics Gate-Emitter Leakage Current: 250 nA IGBT Transistors product type 600 of 100 IGBTs as subcategory 1. 0.191185 oz of Unit Weight

STGW25S120DF3 Image

STGW25S120DF3 Specifications

• Manufacturer: STMicroelectronics
• Product Category: IGBT Transistors
• RoHS: Y
• Technology: Si
• Package / Case: TO247-3
• Mounting Style: Through Hole
• Configuration: Single
• Collector- Emitter Voltage VCEO Max: 1.2 kV
• Collector-Emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current at 25 C: 50 A
• Pd - Power Dissipation: 375 W
• Minimum Operating Temperature: - 55 C
• Maximum Operating Temperature: + 175 C
• Series: STGW25S120DF3
• Packaging: Tube
• Continuous Collector Current Ic Max: 25 A
• Brand: STMicroelectronics
• Gate-Emitter Leakage Current: 250 nA
• Product Type: IGBT Transistors
• Factory Pack Quantity: 600
• Subcategory: IGBTs
• Unit Weight: 0.191185 oz

STGW25S120DF3 FAQ

• A: What is the Manufacturer of the product?

  Q: The Manufacturer of the product is STMicroelectronics.

• A: At what frequency does the Package / Case?

  Q: The product Package / Case is TO247-3.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is Through Hole.

• A: Is the cutoff frequency of the product Configuration?

  Q: Yes, the product's Configuration is indeed Single

• A: Is the cutoff frequency of the product Collector- Emitter Voltage VCEO Max?

  Q: Yes, the product's Collector- Emitter Voltage VCEO Max is indeed 1.2 kV

• A: Is the cutoff frequency of the product Collector-Emitter Saturation Voltage?

  Q: Yes, the product's Collector-Emitter Saturation Voltage is indeed 1.6 V

• A: Is the cutoff frequency of the product Maximum Gate Emitter Voltage?

  Q: Yes, the product's Maximum Gate Emitter Voltage is indeed 20 V

• A: Is the cutoff frequency of the product Continuous Collector Current at 25 C?

  Q: Yes, the product's Continuous Collector Current at 25 C is indeed 50 A

• A: Is the cutoff frequency of the product Pd - Power Dissipation?

  Q: Yes, the product's Pd - Power Dissipation is indeed 375 W

• A: What is the Minimum Operating Temperature of the product?

  Q: The Minimum Operating Temperature of the product is - 55 C.

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 175 C.

• A: What is the Packaging of the product?

  Q: The Packaging of the product is Tube.

• A: At what frequency does the Continuous Collector Current Ic Max?

  Q: The product Continuous Collector Current Ic Max is 25 A.

• A: What is the Brand of the product?

  Q: The Brand of the product is STMicroelectronics.

• A: What is the Gate-Emitter Leakage Current of the product?

  Q: The Gate-Emitter Leakage Current of the product is 250 nA.

• A: At what frequency does the Product Type?

  Q: The product Product Type is IGBT Transistors.

• A: Is the cutoff frequency of the product Factory Pack Quantity?

  Q: Yes, the product's Factory Pack Quantity is indeed 600

• A: Is the cutoff frequency of the product Subcategory?

  Q: Yes, the product's Subcategory is indeed IGBTs

• A: What is the Unit Weight of the product?

  Q: The Unit Weight of the product is 0.191185 oz.