MRFX1K80N-88MHZ

MRFX1K80N-88MHZ Overview

This product is manufactured by NXP. 43 A continuous drain current Vds rating of - 500 mV, 179 V 24.4 dB is 11.5 dB. Output power: 1.8 kW The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of SMD/SMT. OM-1230-4 package/case type is utilized by this product. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 44.7 S This product is equipped with 2 Channel for efficient performance. 3333 W RF MOSFET Transistors product type 1 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, 10 V Gate-Source Threshold Voltage Range: 2.1 V This product is also known by the 935369639598 number of 934069005115.

MRFX1K80N-88MHZ Image

MRFX1K80N-88MHZ Specifications

• Manufacturer: NXP
• Product Category: RF MOSFET Transistors
• Transistor Polarity: Dual N-Channel
• Technology: Si
• Id - Continuous Drain Current: 43 A
• Vds - Drain-Source Breakdown Voltage: - 500 mV, 179 V
• Gain: 24.4 dB
• Output Power: 1.8 kW
• Minimum Operating Temperature: - 40 C
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: OM-1230-4
• Operating Frequency: 1.8 MHz to 400 MHz
• Series: MRFX1K80
• Type: RF Power MOSFET
• Brand: NXP Semiconductors
• Forward Transconductance - Min: 44.7 S
• Number of Channels: 2 Channel
• Pd - Power Dissipation: 3333 W
• Product Type: RF MOSFET Transistors
• Factory Pack Quantity: 1
• Subcategory: MOSFETs
• Vgs - Gate-Source Voltage: - 6 V, 10 V
• Vgs th - Gate-Source Threshold Voltage: 2.1 V
• Part # Aliases: 935369639598

MRFX1K80N-88MHZ FAQ

• A: Is the cutoff frequency of the product Manufacturer?

  Q: Yes, the product's Manufacturer is indeed NXP

• A: What is the Id - Continuous Drain Current of the product?

  Q: The Id - Continuous Drain Current of the product is 43 A.

• A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

  Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed - 500 mV, 179 V

• A: At what frequency does the Gain?

  Q: The product Gain is 24.4 dB.

• A: Is the cutoff frequency of the product Output Power?

  Q: Yes, the product's Output Power is indeed 1.8 kW

• A: At what frequency does the Minimum Operating Temperature?

  Q: The product Minimum Operating Temperature is - 40 C.

• A: At what frequency does the Maximum Operating Temperature?

  Q: The product Maximum Operating Temperature is + 150 C.

• A: What is the Mounting Style of the product?

  Q: The Mounting Style of the product is SMD/SMT.

• A: Is the cutoff frequency of the product Package / Case?

  Q: Yes, the product's Package / Case is indeed OM-1230-4

• A: What is the Type of the product?

  Q: The Type of the product is RF Power MOSFET.

• A: What is the Brand of the product?

  Q: The Brand of the product is NXP Semiconductors.

• A: At what frequency does the Forward Transconductance - Min?

  Q: The product Forward Transconductance - Min is 44.7 S.

• A: At what frequency does the Number of Channels?

  Q: The product Number of Channels is 2 Channel.

• A: Is the cutoff frequency of the product Pd - Power Dissipation?

  Q: Yes, the product's Pd - Power Dissipation is indeed 3333 W

• A: What is the Product Type of the product?

  Q: The Product Type of the product is RF MOSFET Transistors.

• A: What is the Factory Pack Quantity of the product?

  Q: The Factory Pack Quantity of the product is 1.

• A: What is the Subcategory of the product?

  Q: The Subcategory of the product is MOSFETs.

• A: What is the Vgs - Gate-Source Voltage of the product?

  Q: The Vgs - Gate-Source Voltage of the product is - 6 V, 10 V.

• A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

  Q: The product Vgs th - Gate-Source Threshold Voltage is 2.1 V.

• A: What is the Part # Aliases of the product?

  Q: The Part # Aliases of the product is 935369639598.