| Mfr. #: | MRF101AN |
|---|---|
| Produttore: | NXP Semiconductors |
| Descrizione: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | MRF101AN Scheda dati |
This product is manufactured by NXP. 8.8 A continuous drain current Vds rating of 133 V 21.1 dB is 11.5 dB. Output power: 100 W The minimum operating temperature of this product is - 40 C. The product can operate at a maximum temperature of + 150 C. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. Tube packaging for easy dispensing This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 7.1 S This product is equipped with 1 Channel for efficient performance. 182 W RF MOSFET Transistors product type 250 of 100 MOSFETs as subcategory Gate-Source Voltage: - 6 V, + 10 V Gate-Source Threshold Voltage Range: 1.7 V This product is also known by the 935377233129 number of 934069005115.
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
MRF101AN Specifications
A: Is the cutoff frequency of the product Manufacturer?
Q: Yes, the product's Manufacturer is indeed NXP
A: Is the cutoff frequency of the product Id - Continuous Drain Current?
Q: Yes, the product's Id - Continuous Drain Current is indeed 8.8 A
A: What is the Vds - Drain-Source Breakdown Voltage of the product?
Q: The Vds - Drain-Source Breakdown Voltage of the product is 133 V.
A: What is the Gain of the product?
Q: The Gain of the product is 21.1 dB.
A: At what frequency does the Output Power?
Q: The product Output Power is 100 W.
A: At what frequency does the Minimum Operating Temperature?
Q: The product Minimum Operating Temperature is - 40 C.
A: Is the cutoff frequency of the product Maximum Operating Temperature?
Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C
A: Is the cutoff frequency of the product Mounting Style?
Q: Yes, the product's Mounting Style is indeed Through Hole
A: At what frequency does the Package / Case?
Q: The product Package / Case is TO-220-3.
A: At what frequency does the Packaging?
Q: The product Packaging is Tube.
A: Is the cutoff frequency of the product Type?
Q: Yes, the product's Type is indeed RF Power MOSFET
A: At what frequency does the Brand?
Q: The product Brand is NXP Semiconductors.
A: Is the cutoff frequency of the product Forward Transconductance - Min?
Q: Yes, the product's Forward Transconductance - Min is indeed 7.1 S
A: Is the cutoff frequency of the product Number of Channels?
Q: Yes, the product's Number of Channels is indeed 1 Channel
A: At what frequency does the Pd - Power Dissipation?
Q: The product Pd - Power Dissipation is 182 W.
A: What is the Product Type of the product?
Q: The Product Type of the product is RF MOSFET Transistors.
A: What is the Factory Pack Quantity of the product?
Q: The Factory Pack Quantity of the product is 250.
A: At what frequency does the Subcategory?
Q: The product Subcategory is MOSFETs.
A: At what frequency does the Vgs - Gate-Source Voltage?
Q: The product Vgs - Gate-Source Voltage is - 6 V, + 10 V.
A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?
Q: The product Vgs th - Gate-Source Threshold Voltage is 1.7 V.
A: What is the Part # Aliases of the product?
Q: The Part # Aliases of the product is 935377233129.