CSD88539ND

Mfr. #: CSD88539ND
Produttore: Texas Instruments
Descrizione: MOSFET 60-V Dual N-Channel Power MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD88539ND Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD88539ND Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of SMD/SMT. SOIC-8 package/case type is utilized by this product. This product is equipped with 2 Channel for efficient performance. Vds rating of 60 V 15 A continuous drain current Rds On value of 28 mOhms Gate-Source Threshold Voltage Range: 2.6 V Gate-Source Voltage: 10 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 150 C. 2.1 W This product has a Dual configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Reel packaging for easy dispensing The height of the product is 1.75 mm. 4.9 mm long The Transistor Type is 2 N-Channel Power MOSFET. Texas Instruments is a trusted brand for quality electronics 4 ns fall time MOSFET product type Rise Time is 9 ns. 2500 of 100 MOSFETs as subcategory Turn-off delay time is 14 ns. The typical turn-on delay time is 5 ns. 1. 0.019048 oz of Unit Weight

CSD88539ND Image

CSD88539ND

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD88539ND Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: SMD/SMT
  • Package / Case: SOIC-8
  • Number of Channels: 2 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 60 V
  • Id - Continuous Drain Current: 15 A
  • Rds On - Drain-Source Resistance: 28 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.6 V
  • Vgs - Gate-Source Voltage: 10 V
  • Qg - Gate Charge: 7.2 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 150 C
  • Pd - Power Dissipation: 2.1 W
  • Configuration: Dual
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Reel
  • Height: 1.75 mm
  • Length: 4.9 mm
  • Series: CSD88539ND
  • Transistor Type: 2 N-Channel Power MOSFET
  • Width: 3.9 mm
  • Brand: Texas Instruments
  • Fall Time: 4 ns
  • Product Type: MOSFET
  • Rise Time: 9 ns
  • Factory Pack Quantity: 2500
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 14 ns
  • Typical Turn-On Delay Time: 5 ns
  • Unit Weight: 0.019048 oz

CSD88539ND

CSD88539ND Specifications

CSD88539ND FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: Is the cutoff frequency of the product Mounting Style?

    Q: Yes, the product's Mounting Style is indeed SMD/SMT

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is SOIC-8.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 2 Channel.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 60 V

  • A: Is the cutoff frequency of the product Id - Continuous Drain Current?

    Q: Yes, the product's Id - Continuous Drain Current is indeed 15 A

  • A: Is the cutoff frequency of the product Rds On - Drain-Source Resistance?

    Q: Yes, the product's Rds On - Drain-Source Resistance is indeed 28 mOhms

  • A: At what frequency does the Vgs th - Gate-Source Threshold Voltage?

    Q: The product Vgs th - Gate-Source Threshold Voltage is 2.6 V.

  • A: What is the Vgs - Gate-Source Voltage of the product?

    Q: The Vgs - Gate-Source Voltage of the product is 10 V.

  • A: At what frequency does the Minimum Operating Temperature?

    Q: The product Minimum Operating Temperature is - 55 C.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 150 C

  • A: Is the cutoff frequency of the product Pd - Power Dissipation?

    Q: Yes, the product's Pd - Power Dissipation is indeed 2.1 W

  • A: At what frequency does the Configuration?

    Q: The product Configuration is Dual.

  • A: Is the cutoff frequency of the product Channel Mode?

    Q: Yes, the product's Channel Mode is indeed Enhancement

  • A: Is the cutoff frequency of the product Tradename?

    Q: Yes, the product's Tradename is indeed NexFET

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Reel.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 1.75 mm

  • A: At what frequency does the Length?

    Q: The product Length is 4.9 mm.

  • A: Is the cutoff frequency of the product Transistor Type?

    Q: Yes, the product's Transistor Type is indeed 2 N-Channel Power MOSFET

  • A: What is the Brand of the product?

    Q: The Brand of the product is Texas Instruments.

  • A: Is the cutoff frequency of the product Fall Time?

    Q: Yes, the product's Fall Time is indeed 4 ns

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: At what frequency does the Rise Time?

    Q: The product Rise Time is 9 ns.

  • A: What is the Factory Pack Quantity of the product?

    Q: The Factory Pack Quantity of the product is 2500.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 14 ns

  • A: What is the Typical Turn-On Delay Time of the product?

    Q: The Typical Turn-On Delay Time of the product is 5 ns.

  • A: At what frequency does the Unit Weight?

    Q: The product Unit Weight is 0.019048 oz.

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est. Prezzo
1
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0,81 USD
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0,67 USD
6,70 USD
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0,43 USD
43,20 USD
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0,34 USD
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