CSD19531KCS

Mfr. #: CSD19531KCS
Produttore: Texas Instruments
Descrizione: MOSFET 100V 6.4mOhm Pwr MOSFET
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: CSD19531KCS Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
CSD19531KCS Overview

This product is manufactured by Texas Instruments. The product can operate at a maximum temperature of Through Hole. TO-220-3 package/case type is utilized by this product. This product is equipped with 1 Channel for efficient performance. Vds rating of 100 V 200 A continuous drain current Rds On value of 7.7 mOhms Gate-Source Threshold Voltage Range: 2.7 V Gate-Source Voltage: 20 V The minimum operating temperature of this product is - 55 C. The product can operate at a maximum temperature of + 175 C. 179 W This product has a Single configuration. The Channel Mode is set to Enhancement. The product's NexFET is Blue Gecko. Tube packaging for easy dispensing The height of the product is 16.51 mm. 10.67 mm long The Transistor Type is 1 N-Channel. Texas Instruments is a trusted brand for quality electronics 4.1 ns fall time MOSFET product type Rise Time is 7.2 ns. 50 of 100 MOSFETs as subcategory Turn-off delay time is 16 ns. The typical turn-on delay time is 8.4 ns. 1. 0.211644 oz of Unit Weight

CSD19531KCS Image

CSD19531KCS

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

CSD19531KCS Specifications
  • Manufacturer: Texas Instruments
  • Product Category: MOSFET
  • RoHS: Y
  • Technology: Si
  • Mounting Style: Through Hole
  • Package / Case: TO-220-3
  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 200 A
  • Rds On - Drain-Source Resistance: 7.7 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.7 V
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 38 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 179 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: NexFET
  • Packaging: Tube
  • Height: 16.51 mm
  • Length: 10.67 mm
  • Series: CSD19531KCS
  • Transistor Type: 1 N-Channel
  • Width: 4.7 mm
  • Brand: Texas Instruments
  • Fall Time: 4.1 ns
  • Product Type: MOSFET
  • Rise Time: 7.2 ns
  • Factory Pack Quantity: 50
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 16 ns
  • Typical Turn-On Delay Time: 8.4 ns
  • Unit Weight: 0.211644 oz

CSD19531KCS

CSD19531KCS Specifications

CSD19531KCS FAQ
  • A: At what frequency does the Manufacturer?

    Q: The product Manufacturer is Texas Instruments.

  • A: At what frequency does the Mounting Style?

    Q: The product Mounting Style is Through Hole.

  • A: At what frequency does the Package / Case?

    Q: The product Package / Case is TO-220-3.

  • A: At what frequency does the Number of Channels?

    Q: The product Number of Channels is 1 Channel.

  • A: At what frequency does the Vds - Drain-Source Breakdown Voltage?

    Q: The product Vds - Drain-Source Breakdown Voltage is 100 V.

  • A: At what frequency does the Id - Continuous Drain Current?

    Q: The product Id - Continuous Drain Current is 200 A.

  • A: What is the Rds On - Drain-Source Resistance of the product?

    Q: The Rds On - Drain-Source Resistance of the product is 7.7 mOhms.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 2.7 V

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 20 V.

  • A: What is the Minimum Operating Temperature of the product?

    Q: The Minimum Operating Temperature of the product is - 55 C.

  • A: What is the Maximum Operating Temperature of the product?

    Q: The Maximum Operating Temperature of the product is + 175 C.

  • A: What is the Pd - Power Dissipation of the product?

    Q: The Pd - Power Dissipation of the product is 179 W.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: At what frequency does the Channel Mode?

    Q: The product Channel Mode is Enhancement.

  • A: What is the Tradename of the product?

    Q: The Tradename of the product is NexFET.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: Is the cutoff frequency of the product Height?

    Q: Yes, the product's Height is indeed 16.51 mm

  • A: At what frequency does the Length?

    Q: The product Length is 10.67 mm.

  • A: At what frequency does the Transistor Type?

    Q: The product Transistor Type is 1 N-Channel.

  • A: Is the cutoff frequency of the product Brand?

    Q: Yes, the product's Brand is indeed Texas Instruments

  • A: At what frequency does the Fall Time?

    Q: The product Fall Time is 4.1 ns.

  • A: Is the cutoff frequency of the product Product Type?

    Q: Yes, the product's Product Type is indeed MOSFET

  • A: Is the cutoff frequency of the product Rise Time?

    Q: Yes, the product's Rise Time is indeed 7.2 ns

  • A: Is the cutoff frequency of the product Factory Pack Quantity?

    Q: Yes, the product's Factory Pack Quantity is indeed 50

  • A: At what frequency does the Subcategory?

    Q: The product Subcategory is MOSFETs.

  • A: Is the cutoff frequency of the product Typical Turn-Off Delay Time?

    Q: Yes, the product's Typical Turn-Off Delay Time is indeed 16 ns

  • A: At what frequency does the Typical Turn-On Delay Time?

    Q: The product Typical Turn-On Delay Time is 8.4 ns.

  • A: Is the cutoff frequency of the product Unit Weight?

    Q: Yes, the product's Unit Weight is indeed 0.211644 oz

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Quantità
Prezzo unitario
est. Prezzo
1
1,86 USD
1,86 USD
10
1,58 USD
15,80 USD
100
1,26 USD
126,00 USD
500
1,10 USD
550,00 USD
1000
0,92 USD
915,00 USD
2500
0,85 USD
2 130,00 USD
5000
0,82 USD
4 105,00 USD
10000
0,79 USD
7 890,00 USD
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