BLF8G20LS-400PVQ

Mfr. #: BLF8G20LS-400PVQ
Produttore: NXP Semiconductors
Descrizione: RF MOSFET Transistors Power LDMOS transistor
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: BLF8G20LS-400PVQ Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
BLF8G20LS-400PVQ Overview

This product is manufactured by NXP. Vds rating of 65 V Rds On value of 55 mOhms 19 dB is 11.5 dB. The product can operate at a maximum temperature of + 225 C. The product can operate at a maximum temperature of SMD/SMT. SOT-1242B package/case type is utilized by this product. Bulk packaging for easy dispensing This product has a Single configuration. This device belongs to the RF Power MOSFET type. NXP Semiconductors is a trusted brand for quality electronics Minimum forward transconductance of 20.6 S RF MOSFET Transistors product type 60 of 100 MOSFETs as subcategory Gate-Source Voltage: 13 V Gate-Source Threshold Voltage Range: 1.9 V

BLF8G20LS-400PVQ Image

BLF8G20LS-400PVQ

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

BLF8G20LS-400PVQ Specifications
  • Manufacturer: NXP
  • Product Category: RF MOSFET Transistors
  • RoHS: Y
  • Technology: Si
  • Vds - Drain-Source Breakdown Voltage: 65 V
  • Rds On - Drain-Source Resistance: 55 mOhms
  • Gain: 19 dB
  • Maximum Operating Temperature: + 225 C
  • Mounting Style: SMD/SMT
  • Package / Case: SOT-1242B
  • Packaging: Bulk
  • Configuration: Single
  • Operating Frequency: 1805 MHz to 1995 MHz
  • Type: RF Power MOSFET
  • Brand: NXP Semiconductors
  • Forward Transconductance - Min: 20.6 S
  • Product Type: RF MOSFET Transistors
  • Factory Pack Quantity: 60
  • Subcategory: MOSFETs
  • Vgs - Gate-Source Voltage: 13 V
  • Vgs th - Gate-Source Threshold Voltage: 1.9 V

BLF8G20LS-400PVQ

BLF8G20LS-400PVQ Specifications

BLF8G20LS-400PVQ FAQ
  • A: What is the Manufacturer of the product?

    Q: The Manufacturer of the product is NXP.

  • A: Is the cutoff frequency of the product Vds - Drain-Source Breakdown Voltage?

    Q: Yes, the product's Vds - Drain-Source Breakdown Voltage is indeed 65 V

  • A: At what frequency does the Rds On - Drain-Source Resistance?

    Q: The product Rds On - Drain-Source Resistance is 55 mOhms.

  • A: What is the Gain of the product?

    Q: The Gain of the product is 19 dB.

  • A: Is the cutoff frequency of the product Maximum Operating Temperature?

    Q: Yes, the product's Maximum Operating Temperature is indeed + 225 C

  • A: What is the Mounting Style of the product?

    Q: The Mounting Style of the product is SMD/SMT.

  • A: What is the Package / Case of the product?

    Q: The Package / Case of the product is SOT-1242B.

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Bulk.

  • A: Is the cutoff frequency of the product Configuration?

    Q: Yes, the product's Configuration is indeed Single

  • A: What is the Type of the product?

    Q: The Type of the product is RF Power MOSFET.

  • A: What is the Brand of the product?

    Q: The Brand of the product is NXP Semiconductors.

  • A: At what frequency does the Forward Transconductance - Min?

    Q: The product Forward Transconductance - Min is 20.6 S.

  • A: What is the Product Type of the product?

    Q: The Product Type of the product is RF MOSFET Transistors.

  • A: At what frequency does the Factory Pack Quantity?

    Q: The product Factory Pack Quantity is 60.

  • A: What is the Subcategory of the product?

    Q: The Subcategory of the product is MOSFETs.

  • A: At what frequency does the Vgs - Gate-Source Voltage?

    Q: The product Vgs - Gate-Source Voltage is 13 V.

  • A: Is the cutoff frequency of the product Vgs th - Gate-Source Threshold Voltage?

    Q: Yes, the product's Vgs th - Gate-Source Threshold Voltage is indeed 1.9 V

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