2STR1160

Mfr. #: 2STR1160
Produttore: STMicroelectronics
Descrizione: Bipolar Transistors - BJT Low-Volt Fast Switch NPN Pwr Tran
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: 2STR1160 Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2STR1160 Overview

Product belongs to the 500V Transistors series. Digi-ReelR Alternate Packaging is the packaging method for this product Weight of 0.007090 oz SMD/SMT Mounting-Style TO-236-3, SC-59, SOT-23-3 Surface Mount mounting type Supplier device package: SOT-23-3 Configuration Single Transistor type: NPN Maximum current collector Ic is 1A . Maximum collector-emitter breakdown voltage of 60V DC current gain minimum (hFE) of Ic/Vce at 180 @ 500mA, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 430mV @ 100mA, 1A Power-off control: 500 mW Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 60 V The transistor polarity is NPN. The 60 V voltage rating is 40 V. 5 V rating of 5 V Max DC collector current: 1 A Minimum hfe for DC collector-base gain is 180 at 0.5 A at 2 V 85 at 1 A at 2 V. 180 at 0.5 A at 2 V of 605.

2STR1160 Image

2STR1160

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2STR1160 Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single
  • Series 500V Transistors
  • Packaging Digi-ReelR Alternate Packaging
  • Unit-Weight 0.007090 oz
  • Mounting-Style SMD/SMT
  • Package-Case TO-236-3, SC-59, SOT-23-3
  • Mounting-Type Surface Mount
  • Supplier-Device-Package SOT-23-3
  • Configuration Single
  • Power-Max 500mW
  • Transistor-Type NPN
  • Current-Collector-Ic-Max 1A
  • Voltage-Collector-Emitter-Breakdown-Max 60V
  • DC-Current-Gain-hFE-Min-Ic-Vce 180 @ 500mA, 2V
  • Vce-Saturation-Max-Ib-Ic 430mV @ 100mA, 1A
  • Current-Collector-Cutoff-Max 100nA (ICBO)
  • Frequency-Transition -
  • Pd-Power-Dissipation 500 mW
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 60 V
  • Transistor-Polarity NPN
  • Collector-Base-Voltage-VCBO 60 V
  • Emitter-Base-Voltage-VEBO 5 V
  • Maximum-DC-Collector-Current 1 A
  • DC-Collector-Base-Gain-hfe-Min 180 at 0.5 A at 2 V 85 at 1 A at 2 V
  • DC-Current-Gain-hFE-Max 180 at 0.5 A at 2 V

2STR1160

2STR1160 Specifications

2STR1160 FAQ
  • A: Is the cutoff frequency of the product Series?

    Q: Yes, the product's Series is indeed 500V Transistors

  • A: At what frequency does the Packaging?

    Q: The product Packaging is Digi-ReelR Alternate Packaging.

  • A: Is the cutoff frequency of the product Unit-Weight?

    Q: Yes, the product's Unit-Weight is indeed 0.007090 oz

  • A: What is the Mounting-Style of the product?

    Q: The Mounting-Style of the product is SMD/SMT.

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-236-3, SC-59, SOT-23-3

  • A: At what frequency does the Mounting-Type?

    Q: The product Mounting-Type is Surface Mount.

  • A: What is the Supplier-Device-Package of the product?

    Q: The Supplier-Device-Package of the product is SOT-23-3.

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: Is the cutoff frequency of the product Transistor-Type?

    Q: Yes, the product's Transistor-Type is indeed NPN

  • A: What is the Current-Collector-Ic-Max of the product?

    Q: The Current-Collector-Ic-Max of the product is 1A.

  • A: At what frequency does the Voltage-Collector-Emitter-Breakdown-Max?

    Q: The product Voltage-Collector-Emitter-Breakdown-Max is 60V.

  • A: What is the DC-Current-Gain-hFE-Min-Ic-Vce of the product?

    Q: The DC-Current-Gain-hFE-Min-Ic-Vce of the product is 180 @ 500mA, 2V.

  • A: Is the cutoff frequency of the product Vce-Saturation-Max-Ib-Ic?

    Q: Yes, the product's Vce-Saturation-Max-Ib-Ic is indeed 430mV @ 100mA, 1A

  • A: Is the cutoff frequency of the product Pd-Power-Dissipation?

    Q: Yes, the product's Pd-Power-Dissipation is indeed 500 mW

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: What is the Minimum-Operating-Temperature of the product?

    Q: The Minimum-Operating-Temperature of the product is - 65 C.

  • A: At what frequency does the Collector-Emitter-Voltage-VCEO-Max?

    Q: The product Collector-Emitter-Voltage-VCEO-Max is 60 V.

  • A: At what frequency does the Transistor-Polarity?

    Q: The product Transistor-Polarity is NPN.

  • A: At what frequency does the Collector-Base-Voltage-VCBO?

    Q: The product Collector-Base-Voltage-VCBO is 60 V.

  • A: Is the cutoff frequency of the product Emitter-Base-Voltage-VEBO?

    Q: Yes, the product's Emitter-Base-Voltage-VEBO is indeed 5 V

  • A: What is the Maximum-DC-Collector-Current of the product?

    Q: The Maximum-DC-Collector-Current of the product is 1 A.

  • A: At what frequency does the DC-Collector-Base-Gain-hfe-Min?

    Q: The product DC-Collector-Base-Gain-hfe-Min is 180 at 0.5 A at 2 V 85 at 1 A at 2 V.

  • A: At what frequency does the DC-Current-Gain-hFE-Max?

    Q: The product DC-Current-Gain-hFE-Max is 180 at 0.5 A at 2 V.

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