2ST501T

Mfr. #: 2ST501T
Produttore: STMicroelectronics
Descrizione: Darlington Transistors PWR BIP/S.SIGNAL
Ciclo vitale: Nuovo da questo produttore.
Scheda dati: 2ST501T Scheda dati
Due to semiconductor in short supply from 2021,below price is the Normal price before 2021.please send inquire to confirm.
Product Details
2ST501T Overview

Product belongs to the 2ST501 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 350V DC current gain minimum (hFE) of Ic/Vce at 2000 @ 2A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 2mA, 2A Power-off control: 100 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 350 V The transistor polarity is NPN. 5 V rating of 5 V This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 2000. 500 uA Maximum Collector Cut-off Current;

2ST501T Image

2ST501T

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2ST501T Specifications
  • Manufacturer STMicroelectronics
  • Product Category Transistors (BJT) - Single, Pre-Biased
  • Series 2ST501
  • Packaging Tube
  • Unit-Weight 0.081130 oz
  • Mounting-Style Through Hole
  • Package-Case TO-220-3
  • Mounting-Type Through Hole
  • Supplier-Device-Package TO-220AB
  • Configuration Single
  • Power-Max 100W
  • Transistor-Type NPN - Darlington
  • Current-Collector-Ic-Max 4A
  • Voltage-Collector-Emitter-Breakdown-Max 350V
  • DC-Current-Gain-hFE-Min-Ic-Vce 2000 @ 2A, 2V
  • Vce-Saturation-Max-Ib-Ic 1.5V @ 2mA, 2A
  • Current-Collector-Cutoff-Max 100μA
  • Frequency-Transition -
  • Pd-Power-Dissipation 100 W
  • Maximum-Operating-Temperature + 150 C
  • Minimum-Operating-Temperature - 65 C
  • Collector-Emitter-Voltage-VCEO-Max 350 V
  • Transistor-Polarity NPN
  • Emitter-Base-Voltage-VEBO 5 V
  • Continuous-Collector-Current 4 A
  • DC-Collector-Base-Gain-hfe-Min 2000
  • Maximum-Collector-Cut-off-Current 500 uA

2ST501T

2ST501T Specifications

2ST501T FAQ
  • A: What is the Series of the product?

    Q: The Series of the product is 2ST501.

  • A: What is the Packaging of the product?

    Q: The Packaging of the product is Tube.

  • A: At what frequency does the Unit-Weight?

    Q: The product Unit-Weight is 0.081130 oz.

  • A: Is the cutoff frequency of the product Mounting-Style?

    Q: Yes, the product's Mounting-Style is indeed Through Hole

  • A: Is the cutoff frequency of the product Package-Case?

    Q: Yes, the product's Package-Case is indeed TO-220-3

  • A: What is the Mounting-Type of the product?

    Q: The Mounting-Type of the product is Through Hole.

  • A: Is the cutoff frequency of the product Supplier-Device-Package?

    Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB

  • A: What is the Configuration of the product?

    Q: The Configuration of the product is Single.

  • A: What is the Transistor-Type of the product?

    Q: The Transistor-Type of the product is NPN - Darlington.

  • A: At what frequency does the Current-Collector-Ic-Max?

    Q: The product Current-Collector-Ic-Max is 4A.

  • A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?

    Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 350V

  • A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?

    Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 2000 @ 2A, 2V

  • A: At what frequency does the Vce-Saturation-Max-Ib-Ic?

    Q: The product Vce-Saturation-Max-Ib-Ic is 1.5V @ 2mA, 2A.

  • A: What is the Pd-Power-Dissipation of the product?

    Q: The Pd-Power-Dissipation of the product is 100 W.

  • A: What is the Maximum-Operating-Temperature of the product?

    Q: The Maximum-Operating-Temperature of the product is + 150 C.

  • A: Is the cutoff frequency of the product Minimum-Operating-Temperature?

    Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C

  • A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?

    Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 350 V.

  • A: Is the cutoff frequency of the product Transistor-Polarity?

    Q: Yes, the product's Transistor-Polarity is indeed NPN

  • A: What is the Emitter-Base-Voltage-VEBO of the product?

    Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.

  • A: At what frequency does the Continuous-Collector-Current?

    Q: The product Continuous-Collector-Current is 4 A.

  • A: What is the DC-Collector-Base-Gain-hfe-Min of the product?

    Q: The DC-Collector-Base-Gain-hfe-Min of the product is 2000.

  • A: At what frequency does the Maximum-Collector-Cut-off-Current?

    Q: The product Maximum-Collector-Cut-off-Current is 500 uA.

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