| Mfr. #: | 2ST501T |
|---|---|
| Produttore: | STMicroelectronics |
| Descrizione: | Darlington Transistors PWR BIP/S.SIGNAL |
| Ciclo vitale: | Nuovo da questo produttore. |
| Scheda dati: | 2ST501T Scheda dati |


Product belongs to the 2ST501 series. Tube is the packaging method for this product Weight of 0.081130 oz Through Hole Mounting-Style TO-220-3 Through Hole mounting type Supplier device package: TO-220AB Configuration Single Transistor type: NPN - Darlington Maximum current collector Ic is 4A . Maximum collector-emitter breakdown voltage of 350V DC current gain minimum (hFE) of Ic/Vce at 2000 @ 2A, 2V. Product Attribute: Vce-Saturation-Max-Ib-Ic: 1.5V @ 2mA, 2A Power-off control: 100 W Maximum operating temperature of + 150 C Minimum operating temperature: - 65 C Rated VCEO up to 350 V The transistor polarity is NPN. 5 V rating of 5 V This product is capable of handling a 4 A continuous collector current. Minimum hfe for DC collector-base gain is 2000. 500 uA Maximum Collector Cut-off Current;

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

2ST501T Specifications
A: What is the Series of the product?
Q: The Series of the product is 2ST501.
A: What is the Packaging of the product?
Q: The Packaging of the product is Tube.
A: At what frequency does the Unit-Weight?
Q: The product Unit-Weight is 0.081130 oz.
A: Is the cutoff frequency of the product Mounting-Style?
Q: Yes, the product's Mounting-Style is indeed Through Hole
A: Is the cutoff frequency of the product Package-Case?
Q: Yes, the product's Package-Case is indeed TO-220-3
A: What is the Mounting-Type of the product?
Q: The Mounting-Type of the product is Through Hole.
A: Is the cutoff frequency of the product Supplier-Device-Package?
Q: Yes, the product's Supplier-Device-Package is indeed TO-220AB
A: What is the Configuration of the product?
Q: The Configuration of the product is Single.
A: What is the Transistor-Type of the product?
Q: The Transistor-Type of the product is NPN - Darlington.
A: At what frequency does the Current-Collector-Ic-Max?
Q: The product Current-Collector-Ic-Max is 4A.
A: Is the cutoff frequency of the product Voltage-Collector-Emitter-Breakdown-Max?
Q: Yes, the product's Voltage-Collector-Emitter-Breakdown-Max is indeed 350V
A: Is the cutoff frequency of the product DC-Current-Gain-hFE-Min-Ic-Vce?
Q: Yes, the product's DC-Current-Gain-hFE-Min-Ic-Vce is indeed 2000 @ 2A, 2V
A: At what frequency does the Vce-Saturation-Max-Ib-Ic?
Q: The product Vce-Saturation-Max-Ib-Ic is 1.5V @ 2mA, 2A.
A: What is the Pd-Power-Dissipation of the product?
Q: The Pd-Power-Dissipation of the product is 100 W.
A: What is the Maximum-Operating-Temperature of the product?
Q: The Maximum-Operating-Temperature of the product is + 150 C.
A: Is the cutoff frequency of the product Minimum-Operating-Temperature?
Q: Yes, the product's Minimum-Operating-Temperature is indeed - 65 C
A: What is the Collector-Emitter-Voltage-VCEO-Max of the product?
Q: The Collector-Emitter-Voltage-VCEO-Max of the product is 350 V.
A: Is the cutoff frequency of the product Transistor-Polarity?
Q: Yes, the product's Transistor-Polarity is indeed NPN
A: What is the Emitter-Base-Voltage-VEBO of the product?
Q: The Emitter-Base-Voltage-VEBO of the product is 5 V.
A: At what frequency does the Continuous-Collector-Current?
Q: The product Continuous-Collector-Current is 4 A.
A: What is the DC-Collector-Base-Gain-hfe-Min of the product?
Q: The DC-Collector-Base-Gain-hfe-Min of the product is 2000.
A: At what frequency does the Maximum-Collector-Cut-off-Current?
Q: The product Maximum-Collector-Cut-off-Current is 500 uA.