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SI4435DYTRPBF

SI4435DYTRPBF
Mfr. #:
SI4435DYTRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET P-CH 30V 8A 8-SOIC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4435DYTRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
INFINEON
categoria di prodotto
FET - Single
Serie
HEXFETR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.019048 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
8-SOIC (0.154", 3.90mm Width)
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
8-SO
Configurazione
Singola Quad Scarico Tripla Sorgente
Tipo FET
MOSFET Canale P, ossido di metallo
Potenza-Max
2.5W
Tipo a transistor
1 P-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
2320pF @ 15V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
8A (Tc)
Rds-On-Max-Id-Vgs
20 mOhm @ 8A, 10V
Vgs-th-Max-Id
1V @ 250μA
Gate-Carica-Qg-Vgs
60nC @ 10V
Pd-Power-Dissipazione
2.5 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
90 ns
Ora di alzarsi
76 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
- 8 A
Vds-Drain-Source-Breakdown-Voltage
- 30 V
Rds-On-Drain-Source-Resistenza
35 mOhms
Polarità del transistor
Canale P
Tempo di ritardo allo spegnimento tipico
130 ns
Tempo di ritardo all'accensione tipico
16 ns
Qg-Gate-Carica
40 nC
Modalità canale
Aumento
Tags
SI4435DYT, SI4435DY, SI4435D, SI4435, SI443, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.015Ohm; ID -8A; SO-8; PD 2.5W; VGS +/-20V; -55
***ure Electronics
Single P-Channel 30 V 0.02 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ment14 APAC
P CHANNEL MOSFET, 8A; TRANSISTOR POLARIT; P CHANNEL MOSFET, 8A; Transistor Polarity:P Channel; Continuous Drain Current Id:-8A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:2.5W
Parte # Mfg. Descrizione Azione Prezzo
SI4435DYTRPBF
DISTI # V72:2272_13891298		Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant		7187
  • 6000:$0.3202
  • 3000:$0.3536
  • 1000:$0.3542
  • 500:$0.4286
  • 250:$0.4731
  • 100:$0.4745
  • 25:$0.5797
  • 10:$0.5822
  • 1:$0.6573
SI4435DYTRPBF
DISTI # SI4435DYPBFCT-ND		Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		38556In Stock
  • 1000:$0.4334
  • 500:$0.5489
  • 100:$0.7078
  • 10:$0.8960
  • 1:$1.0100
SI4435DYTRPBF
DISTI # SI4435DYPBFDKR-ND		Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		38556In Stock
  • 1000:$0.4334
  • 500:$0.5489
  • 100:$0.7078
  • 10:$0.8960
  • 1:$1.0100
SI4435DYTRPBF
DISTI # SI4435DYPBFTR-ND		Infineon Technologies AGMOSFET P-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		36000In Stock
  • 4000:$0.3927
SI4435DYTRPBF
DISTI # 30306933		Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant		7187
  • 6000:$0.3202
  • 3000:$0.3536
  • 1000:$0.3542
  • 500:$0.4286
  • 250:$0.4731
  • 100:$0.4745
  • 25:$0.5797
  • 23:$0.5822
SI4435DYTRPBF
DISTI # 30746472		Infineon Technologies AGTrans MOSFET P-CH Si 30V 8A 8-Pin SOIC T/R
RoHS: Compliant		4000
  • 4000:$0.2873
SI4435DYTRPBF
DISTI # SI4435DYTRPBF		Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SI4435DYTRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    SI4435DYTRPBF
    DISTI # SI4435DYTRPBF    		Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4435DYTRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.3609
    • 8000:$0.3479
    • 16000:$0.3349
    • 24000:$0.3239
    • 40000:$0.3179
    SI4435DYTRPBF
    DISTI # SP001573756    		Infineon Technologies AGTrans MOSFET P-CH 30V 8A 8-Pin SOIC T/R (Alt: SP001573756)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.2949
    • 8000:€0.2409
    • 16000:€0.2209
    • 24000:€0.2039
    • 40000:€0.1899
    SI4435DYTRPBF
    DISTI # 39M3596    		Infineon Technologies AGP CHANNEL MOSFET, 8A,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):35mohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:-1V,Power Dissipation Pd:2.5W , RoHS Compliant: Yes1798
    • 1:$0.8400
    • 25:$0.7140
    • 50:$0.6320
    • 100:$0.5490
    • 250:$0.5170
    • 500:$0.4850
    • 1000:$0.3830
    SI4435DYTRPBF
    DISTI # 31K5362    		Infineon Technologies AGMOSFET Transistor, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-8A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):20mohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1V,No. of Pins:8Pins , RoHS Compliant: Yes0
    • 1:$0.3400
    • 4000:$0.3400
    SI4435DYTRPBF.
    DISTI # 28AC2139    		Infineon Technologies AGTRENCH_MOSFETS , ROHS COMPLIANT: YES0
    • 1:$0.3400
    • 4000:$0.3400
    SI4435DYTRPBF
    DISTI # 70017416    		Infineon Technologies AGMOSFET,Power,P-Ch,VDSS -30V,RDS(ON) 0.015Ohm,ID -8A,SO-8,PD 2.5W,VGS +/-20V,-55
    RoHS: Compliant    		0
    • 4000:$0.3530
    • 8000:$0.3460
    • 20000:$0.3350
    SI4435DYTRPBF
    DISTI # 942-SI4435DYTRPBF    		Infineon Technologies AGMOSFET HEXFET P-CH Low 0.020 Ohm -30V
    RoHS: Compliant    		3619
    • 1:$0.8400
    • 10:$0.7140
    • 100:$0.5490
    • 500:$0.4850
    • 1000:$0.3830
    • 4000:$0.3400
    SI4435DYTRPBFInternational Rectifier 10
    • 6:$0.9000
    SI4435DYTRPBFFairchild Semiconductor Corporation 1913
      SI4435DYTRPBFInternational Rectifier8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-825
      • 6:$0.7200
      • 1:$0.9600
      SI4435DYTRPBFInternational Rectifier8 A, 30 V, 0.02 OHM, P-CHANNEL, SI, POWER, MOSFET, MS-012AA, SO-88
      • 5:$0.9600
      • 1:$1.2000
      SI4435DYTRPBF
      DISTI # 1702264      		Infineon Technologies AGMOSFET P-CH 30V 8A HEXFET SOIC8, RL7850
      • 4000:£0.2510
      • 8000:£0.2400
      • 12000:£0.2310
      SI4435DYTRPBF
      DISTI # 2577192      		Infineon Technologies AGMOSFET, P-CH, -30V, -8A, SOIC-8
      RoHS: Compliant      		7760
      • 5:£0.5510
      • 25:£0.4720
      • 100:£0.3930
      • 250:£0.3690
      • 500:£0.3440
      SI4435DYTRPBF
      DISTI # 2577235      		Infineon Technologies AG(Alternate Part Number: SP001573756
      RoHS: Compliant      		0
      • 4000:$0.6220
      SI4435DYTRPBF
      DISTI # 2577192      		Infineon Technologies AGMOSFET, P-CH, -30V, -8A, SOIC-8
      RoHS: Compliant      		7676
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8690
      • 500:$0.7680
      • 1000:$0.6060
      • 4000:$0.5380
      SI4435DYTRPBF.
      DISTI # 1374896      		Infineon Technologies AGP CHANNEL MOSFET, 8A
      RoHS: Compliant      		1798
      • 1:$1.3400
      • 10:$1.1400
      • 100:$0.8690
      • 500:$0.7680
      • 1000:$0.6060
      • 4000:$0.5380
      SI4435DYTRPBF
      DISTI # C1S322000510418      		Infineon Technologies AGMOSFETs7252
      • 250:$0.4731
      • 100:$0.4745
      • 25:$0.5797
      • 10:$0.5823
      SI4435DYTRPBF
      DISTI # C1S322000510427      		Infineon Technologies AGMOSFETs4000
      • 4000:$0.3220
      Immagine Parte # Descrizione
      SI4435DDY-T1-E3

      Mfr.#: SI4435DDY-T1-E3

      OMO.#: OMO-SI4435DDY-T1-E3

      		 MOSFET -30V Vds 20V Vgs SO-8
      SI4435DDY-T1-GE3-CUT TAPE

      Mfr.#: SI4435DDY-T1-GE3-CUT TAPE

      OMO.#: OMO-SI4435DDY-T1-GE3-CUT-TAPE-1190

      		 Nuovo e originale
      SI4435BDY

      Mfr.#: SI4435BDY

      OMO.#: OMO-SI4435BDY-1190

      		 Nuovo e originale
      SI4435BDY-T1-E3

      Mfr.#: SI4435BDY-T1-E3

      OMO.#: OMO-SI4435BDY-T1-E3-VISHAY

      		 MOSFET P-CH 30V 7A 8-SOIC
      SI4435DY

      Mfr.#: SI4435DY

      OMO.#: OMO-SI4435DY-ON-SEMICONDUCTOR

      		 MOSFET P-CH 30V 8.8A 8-SOIC
      SI4435DY-NL

      Mfr.#: SI4435DY-NL

      OMO.#: OMO-SI4435DY-NL-1190

      		 Nuovo e originale
      SI4435DY-REVA

      Mfr.#: SI4435DY-REVA

      OMO.#: OMO-SI4435DY-REVA-1190

      		 MOSFET 30V 8A 2.5W
      SI4435DY-TI

      Mfr.#: SI4435DY-TI

      OMO.#: OMO-SI4435DY-TI-1190

      		 Nuovo e originale
      SI4435DYPBF

      Mfr.#: SI4435DYPBF

      OMO.#: OMO-SI4435DYPBF-INFINEON-TECHNOLOGIES

      		 MOSFET P-CH 30V 8A 8-SOIC
      SI4435DYTR

      Mfr.#: SI4435DYTR

      OMO.#: OMO-SI4435DYTR-INFINEON-TECHNOLOGIES

      		 MOSFET P-CH 30V 8A 8-SOIC
      Disponibilità
      Azione:
      Available
      Su ordine:
      5000
      Inserisci la quantità:
      Il prezzo attuale di SI4435DYTRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      0,31 USD
      0,31 USD
      10
      0,29 USD
      2,93 USD
      100
      0,28 USD
      27,77 USD
      500
      0,26 USD
      131,15 USD
      1000
      0,25 USD
      246,80 USD
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