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IRFH7911TRPBF

IRFH7911TRPBF
Mfr. #:
IRFH7911TRPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 2N-CH 30V 13A/28A PQFN
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRFH7911TRPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
Tecnologie Infineon
categoria di prodotto
FET - Array
Serie
HEXFETR
Confezione
Nastro e bobina (TR)
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
18-PowerVQFN
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
2 Channel
Pacchetto-dispositivo-fornitore
PQFN (5x6)
Configurazione
Dual
Tipo FET
2 N-Channel (Dual)
Potenza-Max
2.4W, 3.4W
Tipo a transistor
2 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
1060pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
13A, 28A
Rds-On-Max-Id-Vgs
8.6 mOhm @ 12A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Gate-Carica-Qg-Vgs
12nC @ 4.5V
Pd-Power-Dissipazione
2.4 W 3.4 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5.9 ns 14 ns
Ora di alzarsi
15 ns 35 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
13 A 28 A
Vds-Drain-Source-Breakdown-Voltage
30 V 30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2.35 V
Rds-On-Drain-Source-Resistenza
8.6 mOhms 3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
12 ns 28 ns
Tempo di ritardo all'accensione tipico
12 ns 22 ns
Qg-Gate-Carica
8.3 nC 34 nC
Transconduttanza diretta-Min
17 S 106 S
Tags
IRFH791, IRFH79, IRFH7, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm Lead Free package
***ure Electronics
Dual N-Channel 30 V 8.6 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ical
Trans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
***ied Electronics & Automation
MOSFET, DUAL N-CHANNEL, 30V, POL, PQFN5X6
*** Source Electronics
MOSFET 2N-CH 30V 13A/28A PQFN
***i-Key
MOSFET N-CH 30V DUAL PQFN
***ark
DUAL N CH MOSFET, 30V, PQFN-18; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.2mohm; Rds(on) Test Voltage Vgs:10V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.9 mm); Dual N-Channel MOSFET; Control and Synchronous MOSFETs in one package; Low Charge Control MOSFET; Low Rdson Synchronous MOSFET; Intrinsic Schottky diode with Low Forward Voltage on Q2
***nell
MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Transistor Case Style:QFN; No. of Pins:18; SVHC:No SVHC (15-Dec-2010); Operating Temperature Range:-55°C to +150°C
***ment14 APAC
MOSFET,NN CH,30V,PQFN56; Module Configuration:Dual; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0072ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.35V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:18; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:2.4W
Parte # Mfg. Descrizione Azione Prezzo
IRFH7911TRPBF
DISTI # V72:2272_13889764		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
RoHS: Compliant		375
  • 250:$1.4135
  • 100:$1.4288
  • 25:$1.7130
  • 10:$1.7326
  • 1:$1.9747
IRFH7911TRPBF
DISTI # IRFH7911TRPBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 13A/28A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$1.2511
IRFH7911TRPBF
DISTI # 27502137		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
RoHS: Compliant		4000
  • 4000:$1.0368
IRFH7911TRPBF
DISTI # 26196155		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
RoHS: Compliant		375
  • 250:$1.4135
  • 100:$1.4288
  • 25:$1.7130
  • 10:$1.7326
  • 7:$1.9747
IRFH7911TRPBF
DISTI # IRFH7911TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R (Alt: IRFH7911TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFH7911TRPBF
    DISTI # IRFH7911TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7911TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.9709
    • 8000:$0.9359
    • 16000:$0.9019
    • 24000:$0.8709
    • 40000:$0.8559
    IRFH7911TRPBF
    DISTI # SP001577920    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R (Alt: SP001577920)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€1.1999
    • 8000:€0.9999
    • 16000:€0.9229
    • 24000:€0.8569
    • 40000:€0.7999
    IRFH7911TRPBF
    DISTI # 70019702    		Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,POL,PQFN5X6
    RoHS: Compliant    		0
    • 4000:$2.3900
    • 8000:$2.3420
    • 20000:$2.2710
    • 40000:$2.1750
    • 100000:$2.0320
    IRFH7911TRPBF
    DISTI # 942-IRFH7911TRPBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 8.6mOhms 8.3nC
    RoHS: Compliant    		8011
    • 1:$2.4300
    • 10:$2.0700
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.2000
    • 4000:$1.0800
    IRFH7911TRPBF
    DISTI # C1S322000604629    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 4000:$1.1100
    IRFH7911TRPBF
    DISTI # C1S322000576733    		Infineon Technologies AGTrans MOSFET N-CH 30V 13A/28A 18-Pin PQFN EP T/R
    RoHS: Compliant    		375
    • 250:$1.4135
    • 100:$1.4288
    • 25:$1.7130
    • 10:$1.7326
    Immagine Parte # Descrizione
    IRFH7936TRPBF

    Mfr.#: IRFH7936TRPBF

    OMO.#: OMO-IRFH7936TRPBF

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    IRFH7934TR2PBF

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    IRFH7921TR2PBF

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    		 MOSFET N-CH 30V 15A PQFN56
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    Mfr.#: IRFH7923

    OMO.#: OMO-IRFH7923-1190

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    IRFH7923PBF

    Mfr.#: IRFH7923PBF

    OMO.#: OMO-IRFH7923PBF-1190

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    OMO.#: OMO-IRFH7932-1190

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    IRFH7932PBF

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    IRFH7936TRPBF

    Mfr.#: IRFH7936TRPBF

    OMO.#: OMO-IRFH7936TRPBF-INFINEON-TECHNOLOGIES

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    IRFH7932TRPBF

    Mfr.#: IRFH7932TRPBF

    OMO.#: OMO-IRFH7932TRPBF-INFINEON-TECHNOLOGIES

    		 Darlington Transistors MOSFET 30V 1 N-CH HEXFET 3.3mOhms 34nC
    IRFH7934TRPBF

    Mfr.#: IRFH7934TRPBF

    OMO.#: OMO-IRFH7934TRPBF-INFINEON-TECHNOLOGIES

    		 RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 3.5mOhms 20nC
    Disponibilità
    Azione:
    Available
    Su ordine:
    1000
    Inserisci la quantità:
    Il prezzo attuale di IRFH7911TRPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,28 USD
    1,28 USD
    10
    1,22 USD
    12,20 USD
    100
    1,16 USD
    115,55 USD
    500
    1,09 USD
    545,65 USD
    1000
    1,03 USD
    1 027,10 USD
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