IRF540ZLPBF

IRF540ZLPBF
Mfr. #:
IRF540ZLPBF
Produttore:
Infineon Technologies
Descrizione:
MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF540ZLPBF Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF540ZLPBF DatasheetIRF540ZLPBF Datasheet (P4-P6)IRF540ZLPBF Datasheet (P7-P9)IRF540ZLPBF Datasheet (P10-P12)
ECAD Model:
Maggiori informazioni:
IRF540ZLPBF maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
Foro passante
Pacchetto/custodia:
TO-262-3
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
100 V
Id - Corrente di scarico continua:
36 A
Rds On - Resistenza Drain-Source:
26.5 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
42 nC
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Pd - Dissipazione di potenza:
92 W
Configurazione:
Separare
Modalità canale:
Aumento
Confezione:
Tubo
Altezza:
9.45 mm
Lunghezza:
10.2 mm
Tipo di transistor:
1 N-Channel
Tipo:
Mosfet automobilistico
Larghezza:
4.5 mm
Marca:
Tecnologie Infineon
Tempo di caduta:
39 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
51 ns
Quantità confezione di fabbrica:
1000
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
43 ns
Tempo di ritardo di accensione tipico:
15 ns
Parte # Alias:
SP001559652
Unità di peso:
0.084199 oz
Tags
IRF540Z, IRF540, IRF54, IRF5, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-262;PD 92W;VGS +/-20
***ure Electronics
Single N-Channel 100 V 26.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:36A; On Resistance, Rds(on):26.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 36A, TO-262; Transistor Polarity: N Channel; Continuous Drain Current Id: 36A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 92W; Transistor Case Style: TO-262; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
IRF540N/Z Advanced HEXFET® Power MOSFETs
Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Learn More
Parte # Mfg. Descrizione Azione Prezzo
IRF540ZLPBF
DISTI # IRF540ZLPBF-ND
Infineon Technologies AGMOSFET N-CH 100V 36A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube
531In Stock
  • 1000:$0.5940
  • 500:$0.7524
  • 100:$0.9702
  • 10:$1.2280
  • 1:$1.3900
IRF540ZLPBF
DISTI # IRF540ZLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRF540ZLPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tube
Americas - 0
  • 4000:$0.4139
  • 6000:$0.3999
  • 10000:$0.3849
  • 20000:$0.3719
  • 40000:$0.3649
IRF540ZLPBF
DISTI # SP001559652
Infineon Technologies AGTrans MOSFET N-CH 100V 36A 3-Pin(3+Tab) TO-262 (Alt: SP001559652)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€0.6619
  • 10:€0.5879
  • 25:€0.5299
  • 50:€0.4809
  • 100:€0.4409
  • 500:€0.4069
  • 1000:€0.3779
IRF540ZLPBF
DISTI # 49AC0323
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262,Transistor Polarity:N Channel,Continuous Drain Current Id:36A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.021ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes3430
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 70017276
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 100V,RDS(ON) 21 Milliohms,ID 36A,TO-262,PD 92W,VGS +/-20
RoHS: Compliant
0
  • 1:$2.5800
  • 2:$2.5280
  • 5:$2.4510
  • 10:$2.3480
  • 25:$2.1930
IRF540ZLPBF
DISTI # 942-IRF540ZLPBF
Infineon Technologies AGMOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
RoHS: Compliant
1348
  • 1:$1.1900
  • 10:$1.0100
  • 100:$0.7750
  • 500:$0.6850
  • 1000:$0.5400
IRF540ZLPBF
DISTI # 2839479
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant
3430
  • 5:$1.9500
  • 25:$1.7000
  • 100:$1.3900
  • 250:$1.1700
  • 500:$1.0100
  • 1000:$0.9600
  • 5000:$0.9100
IRF540ZLPBF
DISTI # 2839479
Infineon Technologies AGMOSFET, N-CH, 100V, 36A, TO-262
RoHS: Compliant
3495
  • 5:£0.8680
  • 25:£0.7800
  • 100:£0.5990
  • 250:£0.5640
  • 500:£0.5280
Immagine Parte # Descrizione
88E1518-A0-NNB2C000

Mfr.#: 88E1518-A0-NNB2C000

OMO.#: OMO-88E1518-A0-NNB2C000

Ethernet ICs Single-port Gigabit Ethernet PHY w/EEE; RGMII; 1.8V IO only in 48-pin QFN package
SS1FL3-M3/H

Mfr.#: SS1FL3-M3/H

OMO.#: OMO-SS1FL3-M3-H

Schottky Diodes & Rectifiers If 1A Vrrm 30V DO-219AB Ifsm 40A
VSSAF3M6HM3/H

Mfr.#: VSSAF3M6HM3/H

OMO.#: OMO-VSSAF3M6HM3-H

Schottky Diodes & Rectifiers TMBS 60V Vrrm eSMP AEC-Q101 Qualified
VSSAF3M6HM3/H

Mfr.#: VSSAF3M6HM3/H

OMO.#: OMO-VSSAF3M6HM3-H-VISHAY

DIODE SCHOTTKY 60V 3A DO221AC
204226-1001

Mfr.#: 204226-1001

OMO.#: OMO-204226-1001-1190

Unclassified
204220-0006

Mfr.#: 204220-0006

OMO.#: OMO-204220-0006--1

Housing Squba Sealed Receptacle Crimp 6 Circuits Single Row 1.8mm Pitch Nylon Black Tray (Alt: 2042200006)
88E1518-A0-NNB2C000

Mfr.#: 88E1518-A0-NNB2C000

OMO.#: OMO-88E1518-A0-NNB2C000-1190

Integrated 10/100/1000 Mbps Energy Efficient Ethernet Transceiver (Alt: 88E1518-A0-NNB2C000)
K104K15X7RF53H5

Mfr.#: K104K15X7RF53H5

OMO.#: OMO-K104K15X7RF53H5-VISHAY

Multilayer Ceramic Capacitors MLCC - Leaded 0.1uF 50volts 10% X7R 5mm LS
315-93-164-41-001000

Mfr.#: 315-93-164-41-001000

OMO.#: OMO-315-93-164-41-001000-MILL-MAX

IC & Component Sockets 64 POS LOW PRO .1"
SS1FL3-M3/H

Mfr.#: SS1FL3-M3/H

OMO.#: OMO-SS1FL3-M3-H-VISHAY

Schottky Diodes & Rectifiers If 1A Vrrm 30V DO-219AB Ifsm 40A
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di IRF540ZLPBF è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
1,18 USD
1,18 USD
10
1,00 USD
10,00 USD
100
0,78 USD
77,50 USD
500
0,68 USD
342,50 USD
1000
0,54 USD
540,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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