IPZ65R019C7XKSA1

Mfr. #:: IPZ65R019C7XKSA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET N-Ch 700V 75A TO247-4
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPZ65R019C7XKSA1 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Confezione: Tubo

Alias parziali: IPZ65R019C7 SP001024002

Unità di peso: 1.340411 oz

Stile di montaggio: Foro passante

Nome depositato: CoolMOS

Pacchetto-Custodia: TO-247-4

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 446 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 5 ns

Ora di alzarsi: 27 ns

Vgs-Gate-Source-Voltage: 30 V

Id-Continuo-Scarico-Corrente: 75 A

Vds-Drain-Source-Breakdown-Voltage: 700 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 3.5 V

Rds-On-Drain-Source-Resistenza: 19 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 106 ns

Tempo di ritardo all'accensione tipico: 30 ns

Qg-Gate-Carica: 215 nC

Tags: IPZ65, IPZ6, IPZ

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We provide 90-360 days warranty.

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Step2:
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IPZ65R019C7XKSA1 Descrizione

***Components: In a Tube of 30, N-Channel MOSFET, 75 A, 700 V, 4-Pin TO-247 Infineon IPZ65R019C7XKSA1

***ical: Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube

***et Europe: Trans MOSFET N-CH 650(Min)V 75A 4-Pin TO-247 Tube

***i-Key: MOSFET N-CH 650V TO247-4

***ukat: N-Ch 650V 75A 446W 0,019R TO247-4

***ronik: N-CH 650V 19mOhm 75A TO247-4

***ark: Mosfet, N-Ch, 650V, 75A, To-247-4; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.017Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 650V, 75A, TO-247-4; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.017ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:446W; Transistor Case Style:TO-247; No. of Pins:4Pins; Operating Temperature Max:150°C; Product Range:CoolMOS C7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)

***nell: MOSFET, CANALE N, 650V 75A, TO-247-4; Polarità Transistor:Canale N; Corrente Continua di Drain Id:75A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.017ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:446W; Modello Case Transistor:TO-247; No. di Pin:4Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS C7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)

***ineon: Infineons new CoolMOS C7 series is a revolutionary step forward in technology, providing the worldss lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. | Summary of Features: 650V voltage; Revolutionary best-in-class R DS(on)/package; Reduced energy stored in output capacitance (Eoss); Lower gate charge Qg; Space saving through use of smaller packages or reduction of parts; 12 years manufacturing experience in superjunction technology | Benefits: Improved safety margin and suitable for both SMPS and solar inverter applications; Lowest conduction losses/package; Low switching losses; Better light load efficiency; Increasing power density; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; PC power

IPZ65R019C7XKSA1 Maggiori informazioni

CoolMOS™ 7 Superjunction MOSFETs: Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ C7 Power MOSFETs: Infineon's CoolMOS™ C7 Power MOSFETs are a revolutionary step forward in technology, providing low RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. The C7 is optimized for hard switching topologies such as Power Factor Correction (CCM PFC), Two Transistor Forward (TTF) and Solar Boost in applications such as Solar, Server, Telecom and UPS. The 650V breakdown voltage makes it suitable for Solar and Switched Mode Power Supplies (SMPS) PFC stages where extra safety margin are required. They offer the world's lowest RDS(on) of 19mΩ in a TO-247 and 45mΩ in TO-220 and D2PAK packages. The fast switching performance of C7 now enables customers to operate at switching frequencies greater than 100kHz while achieving titanium levels of efficiency in Server PFC stages.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPZ65R019C7XKSA1 DISTI # V99:2348_06377013	Infineon Technologies AG	Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	214	250:$15.1100 100:$15.2100 25:$17.2000 10:$18.5200 5:$19.8600 1:$20.0700
IPZ65R019C7XKSA1 DISTI # V36:1790_06377013	Infineon Technologies AG	Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	0
IPZ65R019C7XKSA1 DISTI # IPZ65R019C7XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 650V TO247-4 RoHS: Compliant Min Qty: 1 Container: Tube	218In Stock	240:$17.4553 25:$19.5224 10:$20.4410 1:$22.1600
IPZ65R019C7XKSA1 DISTI # 32882235	Infineon Technologies AG	Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	214	250:$16.2432 100:$16.3508 25:$18.4900 10:$19.9090 5:$21.3495 1:$21.5753
IPZ65R019C7XKSA1 DISTI # 25287347	Infineon Technologies AG	Trans MOSFET N-CH 700V 75A 4-Pin(4+Tab) TO-247 Tube RoHS: Compliant	175	250:$14.9787 100:$15.7014 25:$17.5626 10:$18.3942 5:$19.7307 1:$19.9386
IPZ65R019C7XKSA1 DISTI # SP001024002	Infineon Technologies AG	Trans MOSFET N-CH 650(Min)V 75A 4-Pin TO-247 Tube (Alt: SP001024002) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 240	1000:€11.4900 500:€12.3900 100:€12.7900 50:€13.2900 25:€13.8900 10:€14.3900 1:€15.7900
IPZ65R019C7XKSA1 DISTI # IPZ65R019C7XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 650(Min)V 75A 4-Pin TO-247 Tube - Rail/Tube (Alt: IPZ65R019C7XKSA1) RoHS: Compliant Min Qty: 240 Container: Tube	Americas - 0	2400:$13.1900 1440:$13.4900 960:$13.8900 480:$14.3900 240:$14.9900
IPZ65R019C7XKSA1 DISTI # 34AC1740	Infineon Technologies AG	MOSFET, N-CH, 650V, 75A, TO-247-4,Transistor Polarity:N Channel,Continuous Drain Current Id:75A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.017ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes	192	250:$15.2800 100:$16.0200 50:$16.9700 25:$17.9200 10:$18.7700 1:$20.3400
IPZ65R019C7 DISTI # 726-IPZ65R019C7	Infineon Technologies AG	MOSFET N-Ch 700V 75A TO247-4 RoHS: Compliant	240	1:$20.1400 5:$19.9300 10:$18.5800 25:$17.7400 100:$15.8600 250:$15.1300
IPZ65R019C7XKSA1 DISTI # 726-IPZ65R019C7XKSA1	Infineon Technologies AG	MOSFET N-Ch 700V 75A TO247-4 RoHS: Compliant	201	1:$20.1400 5:$19.9300 10:$18.5800 25:$17.7400 100:$15.8600 250:$15.1300
IPZ65R019C7XKSA1 DISTI # 8977661P	Infineon Technologies AG	MOSFET N-CHANNEL 700V 75A COOLMOS TO247, TU	330	15:£24.9900 6:£26.8000
IPZ65R019C7XKSA1 DISTI # 2781196	Infineon Technologies AG	MOSFET, N-CH, 650V, 75A, TO-247-4 RoHS: Compliant	192	250:$20.4800 100:$20.8200 50:$21.5400 10:$22.3100 5:$23.5700 1:$24.0300
IPZ65R019C7XKSA1 DISTI # 2781196	Infineon Technologies AG	MOSFET, N-CH, 650V, 75A, TO-247-4	192	100:£12.3400 50:£13.0800 10:£13.8100 5:£15.5000 1:£15.6800
IPZ65R019C7XKSA1 DISTI # XSKDRABS0034516	Infineon Technologies AG	RoHS: Compliant	180 in Stock0 on Order	180:$19.6680 30:$21.0840
IPZ65R019C7XKSA1 DISTI # IPZ65R019C7	Infineon Technologies AG	N-Ch 650V 75A 446W 0,019R TO247-4 RoHS: Compliant	0	1:€19.7000 10:€15.7000 50:€13.7000 100:€13.1000

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: IPZ65R019C7XKSA1

OMO.#: OMO-IPZ65R019C7XKSA1

MOSFET N-Ch 700V 75A TO247-4

Mfr.#: IPZ65R019C7

OMO.#: OMO-IPZ65R019C7-1190

MOSFET N-Ch 700V 75A TO247-4

Mfr.#: IPZ65R019C7XKSA1

OMO.#: OMO-IPZ65R019C7XKSA1-INFINEON-TECHNOLOGIES

MOSFET N-Ch 700V 75A TO247-4

Disponibilità

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Su ordine:: 5000
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Il prezzo attuale di IPZ65R019C7XKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~18,24 USD~~; ~~18,24 USD~~

10: ~~17,33 USD~~; ~~173,28 USD~~

100: ~~16,42 USD~~; ~~1 641,60 USD~~

500: ~~15,50 USD~~; ~~7 752,00 USD~~

1000: ~~14,59 USD~~; ~~14 592,00 USD~~

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IPZ65R019C7XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes