STB42N65M5

Mfr. #:: STB42N65M5
Produttore:: STMicroelectronics
Descrizione:: MOSFET N-CH 650V 33A D2PAK
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: STB42N65M5 Scheda dati
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Maggiori informazioni:: STB42N65M5 maggiori informazioni STB42N65M5 Product Details

Attributo del prodotto
Valore attributo

Produttore: STMicroelectronics

categoria di prodotto: FET - Single

Serie: MDmesh V

Confezione: Imballaggio alternativo Digi-ReelR

Unità di peso: 0.139332 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Tecnologia: si

Temperatura di esercizio: 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: D2PAK

Configurazione: Separare

Tipo FET: MOSFET N-Channel, ossido di metallo

Potenza-Max: 190W

Tipo a transistor: 1 N-Channel

Drain-to-Source-Voltage-Vdss: 650V

Ingresso-Capacità-Ciss-Vds: 4650pF @ 100V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 33A (Tc)

Rds-On-Max-Id-Vgs: 79 mOhm @ 16.5A, 10V

Vgs-th-Max-Id: 5V @ 250μA

Gate-Carica-Qg-Vgs: 100nC @ 10V

Pd-Power-Dissipazione: 190 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 13 ns

Ora di alzarsi: 24 ns

Vgs-Gate-Source-Voltage: 25 V

Id-Continuo-Scarico-Corrente: 33 A

Vds-Drain-Source-Breakdown-Voltage: 650 V

Rds-On-Drain-Source-Resistenza: 79 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 65 ns

Tempo di ritardo all'accensione tipico: 61 ns

Modalità canale: Aumento

Tags: STB42N, STB42, STB4, STB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STB42N65M5 Descrizione

***ark: Mosfet Transistor, N Channel, 33 A, 650 V, 0.07 Ohm, 10 V, 4 V Rohs Compliant: Yes

***th Star Micro: Transistor MOSFET N-CH 650V 33A 3-Pin (2+Tab) D2PAK T/R

***Components: N-Channel MOSFET, 33 A, 650 V, 3-Pin D2PAK STMicroelectronics STB42N65M5

***ure Electronics: N-Channel 650 V 0.079 Ohm Surface Mount MDmesh V Power Mosfet - D2PAK

***ical: Trans MOSFET N-CH Si 650V 33A 3-Pin(2+Tab) D2PAK T/R

***et Europe: Trans MOSFET N-CH 650V 33A 3-Pin(2+Tab) D2PAK T/R

***ied Electronics & Automation: MOSFET N-Channel 650V 33A D2PAK

***i-Key: MOSFET N-CH 650V 33A D2PAK

***et: STMICROELECTRONICS STB42N65M5 MOSFETS

***ronik: N-CH 650V 33A 79mOhm TO263-3

***ment14 APAC: Prices include import duty and tax. MOSFET, N CH, 650V, 33A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.07ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:190W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (17-Dec-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C

***nell: MOSFET, CANALE N, 650V, 33A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:33A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.07ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:190W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015); Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C

STB42N65M5 Maggiori informazioni

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

STM MDmeshV Power MOSFETs - Surface Mount

N-channel MDmesh V Power MOSFET: STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products offering greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
STB42N65M5 DISTI # 497-8769-1-ND	STMicroelectronics	MOSFET N-CH 650V 33A D2PAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	29In Stock	500:$8.3909 100:$10.0149 10:$12.1800 1:$13.5300
STB42N65M5 DISTI # 497-8769-6-ND	STMicroelectronics	MOSFET N-CH 650V 33A D2PAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	29In Stock	500:$8.3909 100:$10.0149 10:$12.1800 1:$13.5300
STB42N65M5 DISTI # 497-8769-2-ND	STMicroelectronics	MOSFET N-CH 650V 33A D2PAK RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	On Order	1000:$7.0953
STB42N65M5 DISTI # STB42N65M5	STMicroelectronics	Trans MOSFET N-CH 650V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: STB42N65M5) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$7.0900 2000:$6.7900 4000:$6.4900 6000:$6.1900 10000:$6.0900
STB42N65M5 DISTI # 511-STB42N65M5	STMicroelectronics	MOSFET N-ch 650 Volt 33Amp RoHS: Compliant	16	1:$11.3600 10:$10.2700 25:$9.7900 100:$8.5000 250:$8.1200 500:$7.4000 1000:$6.4500
STB42N65M5 DISTI # 7610402	STMicroelectronics	MOSFET N-CHANNEL 650V 33A D2PAK, EA	95	1:£8.8100 10:£7.4400 50:£7.1000 150:£6.1500 500:£5.3600
STB42N65M5 DISTI # 7610402P	STMicroelectronics	MOSFET N-CHANNEL 650V 33A D2PAK, RL	1	10:£7.4400 50:£7.1000 150:£6.1500 500:£5.3600
STB42N65M5 DISTI # 2098141	STMicroelectronics	MOSFET, N CH, 650V, 33A, D2PAK RoHS: Compliant	0	1:£8.8100 5:£8.6000 10:£7.4100 50:£7.1000 100:£6.1500

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: STB42N65M5 OMO.#: OMO-STB42N65M5	MOSFET N-ch 650 Volt 33Amp
	Mfr.#: STB42N60M2-EP OMO.#: OMO-STB42N60M2-EP	MOSFET N-channel 600 V, 0.076 Ohm typ., 34 A MDmesh M2 EP Power MOSFET in a D2PAK package
	Mfr.#: STB42N65M5 OMO.#: OMO-STB42N65M5-STMICROELECTRONICS	MOSFET N-CH 650V 33A D2PAK
	Mfr.#: STB42 OMO.#: OMO-STB42-1190	Nuovo e originale
	Mfr.#: STB42N60M2-EP OMO.#: OMO-STB42N60M2-EP-STMICROELECTRONICS	MOSFET N-CH 600V 34A EP D2PAK
	Mfr.#: STB42N65DM5 OMO.#: OMO-STB42N65DM5-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 3500
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Il prezzo attuale di STB42N65M5 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~6,15 USD~~; ~~6,15 USD~~

10: ~~5,84 USD~~; ~~58,42 USD~~

100: ~~5,54 USD~~; ~~553,50 USD~~

500: ~~5,23 USD~~; ~~2 613,75 USD~~

1000: ~~4,92 USD~~; ~~4 920,00 USD~~

A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.

Iniziare con

STB42N 3
STB42 4
STB4 81
STB 1088

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STB42N65M5

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes