IXFH88N30P

IXFH88N30P
Mfr. #:
IXFH88N30P
Produttore:
Littelfuse
Descrizione:
IGBT Transistors MOSFET 88 Amps 300V 0.04 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXFH88N30P Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IXFH88N30P maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
IXYS
categoria di prodotto
FET - Single
Serie
IXFH88N30
Confezione
Tubo
Unità di peso
0.229281 oz
Stile di montaggio
Foro passante
Nome depositato
Polar HiPerFET
Pacchetto-Custodia
TO-247-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
600 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
25 ns
Ora di alzarsi
24 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
88 A
Vds-Drain-Source-Breakdown-Voltage
300 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
5 V
Rds-On-Drain-Source-Resistenza
40 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
96 ns
Tempo di ritardo all'accensione tipico
25 ns
Qg-Gate-Carica
180 nC
Transconduttanza diretta-Min
40 S
Modalità canale
Aumento
Tags
IXFH88, IXFH8, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Mosfet Transistor, N Channel, 88 A, 300 V, 40 Mohm, 10 V, 5 V Rohs Compliant: Yes
***ure Electronics
N-Channel 300 V 88 A 40 mO Through Hole HiPerFET Power Mosfet - TO-247
***ical
Trans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-247AD
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descrizione Azione Prezzo
IXFH88N30P
DISTI # 19778520
IXYS CorporationTrans MOSFET N-CH 300V 88A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
30
  • 25:$6.5334
  • 2:$6.7345
IXFH88N30P
DISTI # IXFH88N30P-ND
IXYS CorporationMOSFET N-CH 300V 88A TO-247
RoHS: Compliant
Min Qty: 30
Container: Box
Temporarily Out of Stock
  • 30:$9.2867
IXFH88N30P
DISTI # 58M7603
IXYS CorporationMOSFET Transistor, N Channel, 88 A, 300 V, 40 mohm, 10 V, 5 V RoHS Compliant: Yes0
  • 500:$7.3700
  • 250:$8.0900
  • 100:$8.8600
  • 50:$9.0600
  • 25:$9.7500
  • 10:$11.7200
  • 1:$13.0200
IXFH88N30P
DISTI # 747-IXFH88N30P
IXYS CorporationMOSFET 88 Amps 300V 0.04 Rds
RoHS: Compliant
0
  • 1:$13.0200
  • 10:$11.7200
  • 25:$9.7500
  • 50:$9.0600
  • 100:$8.8600
  • 250:$8.0900
  • 500:$7.3700
  • 1000:$7.0300
IXFH88N30P
DISTI # 193559P
IXYS CorporationMOSFET N-CHANNEL 300V 88A TO247, TU69
  • 15:£7.5600
  • 6:£7.9500
IXFH88N30P
DISTI # 1427303
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
27
  • 10:£8.1700
  • 5:£11.4700
  • 1:£12.0600
IXFH88N30P
DISTI # 1427303
IXYS CorporationMOSFET, N, TO-247
RoHS: Compliant
0
  • 1000:$10.5900
  • 500:$11.1100
  • 250:$12.1900
  • 100:$13.3500
  • 50:$13.6500
  • 25:$14.6900
  • 10:$17.6600
  • 1:$19.6200
Immagine Parte # Descrizione
IXFH80N65X2-4

Mfr.#: IXFH80N65X2-4

OMO.#: OMO-IXFH80N65X2-4

MOSFET 650V/80A TO-247-4L
IXFH88N30P

Mfr.#: IXFH88N30P

OMO.#: OMO-IXFH88N30P

MOSFET 88 Amps 300V 0.04 Rds
IXFH80N30P3

Mfr.#: IXFH80N30P3

OMO.#: OMO-IXFH80N30P3

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IXFH80N10

Mfr.#: IXFH80N10

OMO.#: OMO-IXFH80N10

MOSFET 80 Amps 100V 0.125 Rds
IXFH8N80

Mfr.#: IXFH8N80

OMO.#: OMO-IXFH8N80

MOSFET 8 Amps 800V 1.1 Rds
IXFH80N02

Mfr.#: IXFH80N02

OMO.#: OMO-IXFH80N02-1190

Nuovo e originale
IXFH80N085

Mfr.#: IXFH80N085

OMO.#: OMO-IXFH80N085-IXYS-CORPORATION

MOSFET HiPerFETTM Power MOSFET
IXFH88N20Q

Mfr.#: IXFH88N20Q

OMO.#: OMO-IXFH88N20Q-IXYS-CORPORATION

MOSFET 88 Amps 200V 0.03 Rds
IXFH80N10

Mfr.#: IXFH80N10

OMO.#: OMO-IXFH80N10-IXYS-CORPORATION

MOSFET 80 Amps 100V 0.125 Rds
IXFH8N80

Mfr.#: IXFH8N80

OMO.#: OMO-IXFH8N80-IXYS-CORPORATION

IGBT Transistors MOSFET 8 Amps 800V 1.1 Rds
Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IXFH88N30P è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
10,41 USD
10,41 USD
10
9,89 USD
98,92 USD
100
9,37 USD
937,14 USD
500
8,85 USD
4 425,40 USD
1000
8,33 USD
8 330,20 USD
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