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AUIRF7309QTR

AUIRF7309QTR
Mfr. #:
AUIRF7309QTR
Produttore:
Infineon / IR
Descrizione:
MOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
AUIRF7309QTR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
AUIRF7309QTR DatasheetAUIRF7309QTR Datasheet (P4-P6)AUIRF7309QTR Datasheet (P7-P9)AUIRF7309QTR Datasheet (P10-P12)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
2 Channel
Polarità del transistor:
Canale N, Canale P
Vds - Tensione di rottura Drain-Source:
30 V
Id - Corrente di scarico continua:
4 A
Rds On - Resistenza Drain-Source:
80 mOhms
Vgs - Tensione Gate-Source:
20 V
Qg - Carica cancello:
16.7 nC
Pd - Dissipazione di potenza:
1.4 W
Configurazione:
Dual
Qualificazione:
AEC-Q101
Confezione:
Bobina
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Tipo di transistor:
1 N-Channel, 1 P-Channel
Larghezza:
3.9 mm
Marca:
Infineon / IR
Tipologia di prodotto:
MOSFET
Quantità confezione di fabbrica:
4000
sottocategoria:
MOSFET
Parte # Alias:
SP001521596
Unità di peso:
0.019048 oz
Tags
AUIRF7309QT, AUIRF7309, AUIRF730, AUIRF73, AUIRF7, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
***ineon SCT
Automotive Q101 30V Dual N and P-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS
***(Formerly Allied Electronics)
MOSFET Dual N/P-Channel 30V 4A/3A SOIC8
***roFlash
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ment14 APAC
MOSFET, NP CH, 30V, 4.7/3.5A, SO8; Transistor Polarity:N and P Channel; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (19-Dec-2011); Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.05ohm; Power Dissipation Pd:1.4W
***ineon
Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Port Injection; Solenoid Injection
***(Formerly Allied Electronics)
IRF7309PBF Dual N/P-channel MOSFET Transistor, 3 A, 4 A, 30 V, 8-Pin SOIC | Infineon IRF7309PBF
***ure Electronics
Dual N/P-Channel 30 V 0.05/0.1 Ohm 25/25 nC HEXFET® Power Mosfet - SOIC-8
***ineon SCT
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***trelec
MOSFET Operating temperature: -55...150 °C Housing type: SOIC-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.4 W
***nell
MOSFET, DUAL NP LOGIC SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.05ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power D
***nsix Microsemi
Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ark
Channel Type:Dual N And Dual P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:4A; Continuous Drain Current Id P Channel:3A; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon IRF7309TRPBF.
***ure Electronics
ZXMHC3 Series 30 V 33 mOhm 2N/2P-Ch. H-Bridge Enhancement Mode MOSFET - SOIC-8
***(Formerly Allied Electronics)
MOSFET Dual N/P-Ch 30V 4.98A/4.13A SOIC8 | Diodes Inc ZXMHC3F381N8TC
***ark
Mosfet, Comp, H-Bride, 30V, So8; Channel Type:Complementary N And P Channel; Drain Source Voltage Vds N Channel:30V; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:3.98A; No. Of Pins:8Pins Rohs Compliant: Yes |Diodes Inc. ZXMHC3F381N8TC
***icontronic
Small Signal Field-Effect Transistor, 3.98A I(D), 30V, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***el Electronic
Transistors - FETs, MOSFETs - Arrays 1 (Unlimited) Tape & Reel (TR) 8-SOIC (0.154, 3.90mm Width) Surface Mount 2 N and 2 P-Channel (H-Bridge) Logic Level Gate -55°C~150°C TJ 33m Ω @ 5A, 10V 3V @ 250μA MOSFET 2N/2P-CH 30V 8-SOIC
***nell
MOSFET, COMP, H-BRIDE, 30V, SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.98A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.033ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 870mW; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Continuous Drain Current Id, N Channel: 5A; Continuous Drain Current Id, P Channel: -4.1A; Drain Source Voltage Vds, N Channel: 30V; Drain Source Voltage Vds, P Channel: -30V; Module Configuration: Half Bridge; On Resistance Rds(on), N Channel: 0.033ohm; On Resistance Rds(on), P Channel: 0.055ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
***emi
Power MOSFET and Schottky Diode, 30 V, 5.7 A, Single N-Channel
***th Star Micro
NTMD4884NF: Small Signal MOSFET 30V 5.7A 70 mOhm Dual N-Channel SO-8 FETKY
***ark
N Channel Mosfet, 30V, 5.7A, Soic, Full Reel
***r Electronics
Small Signal Field-Effect Transistor, 3.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***et Japan
Transistor MOSFET Array Dual P-CH 30V 3.6A 8-Pin SOIC T/R
***ure Electronics
Dual P-Channel 30 V 100 mOhm 25 nC HEXFET® Power Mosfet - SOIC-8
*** Stop Electro
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***nell
MOSFET, DUAL, PP, LOGIC, SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Po
***ark
Channel Type:dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:3.6A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes
***ure Electronics
Dual N & P-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SOIC-8
***Yang
Trans MOSFET N/P-CH 30V 3.9A/3.5A 8-Pin SOIC N T/R - Tape and Reel
***emi
Dual N & P Channel Enhancement Mode Field Effect Transistor
***r Electronics
Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***rchild Semiconductor
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Parte # Mfg. Descrizione Azione Prezzo
AUIRF7309QTR
DISTI # V72:2272_13892092		Infineon Technologies AGTrans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R3956
  • 3000:$0.5954
  • 1000:$0.6991
  • 500:$0.7705
  • 250:$0.8562
  • 100:$0.9513
  • 25:$1.2084
  • 10:$1.2320
  • 1:$1.4134
AUIRF7309QTR
DISTI # AUIRF7309QCT-ND		Infineon Technologies AGMOSFET N/P-CH 30V 4A/3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		7931In Stock
  • 1000:$0.8151
  • 500:$1.0324
  • 100:$1.3313
  • 10:$1.6850
  • 1:$1.9000
AUIRF7309QTR
DISTI # AUIRF7309QDKR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 4A/3A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		7931In Stock
  • 1000:$0.8151
  • 500:$1.0324
  • 100:$1.3313
  • 10:$1.6850
  • 1:$1.9000
AUIRF7309QTR
DISTI # AUIRF7309QTR-ND		Infineon Technologies AGMOSFET N/P-CH 30V 4A/3A 8SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		4000In Stock
  • 4000:$0.7386
AUIRF7309QTR
DISTI # 27614561		Infineon Technologies AGTrans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R3956
  • 3000:$0.5954
  • 1000:$0.6991
  • 500:$0.7705
  • 250:$0.8562
  • 100:$0.9513
  • 25:$1.2084
  • 11:$1.2320
AUIRF7309QTR
DISTI # AUIRF7309QTR		Infineon Technologies AGTrans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC N T/R - Tape and Reel (Alt: AUIRF7309QTR)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.6179
  • 8000:$0.6119
  • 16000:$0.6099
  • 24000:$0.6089
  • 40000:$0.6069
AUIRF7309QTR
DISTI # 12AC9433		Infineon Technologies AGMOSFET, AEC-Q101, DUAL N&PCH, 30V, SOIC,Transistor Polarity:N and P Channel,Continuous Drain Current Id:4A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.05ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1133
  • 1000:$0.8820
  • 500:$1.0900
  • 250:$1.1600
  • 100:$1.2200
  • 50:$1.3300
  • 25:$1.4400
  • 10:$1.5500
  • 1:$1.8000
AUIRF7309QTR
DISTI # 942-AUIRF7309QTR		Infineon Technologies AGMOSFET AUTO 30V 1 N-CH HEXFET 50mOhms
RoHS: Compliant		6362
  • 1:$1.5800
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.9120
  • 1000:$0.7200
  • 4000:$0.6380
  • 8000:$0.6140
AUIRF7309QTRInternational Rectifier 
RoHS: Compliant		Europe - 3645
    AUIRF7309QTR
    DISTI # TMOS1392    		Infineon Technologies AGN/P-CH 30V 4,7/3,5A 50mOhm SO8
    RoHS: Compliant    		Stock DE - 94Stock US - 0
    • 1:$1.0249
    • 3:$0.9664
    • 8:$0.9078
    • 21:$0.8199
    • 58:$0.7907
    AUIRF7309QTR
    DISTI # C1S322000575585    		Infineon Technologies AGTrans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
    RoHS: Compliant    		1133
    • 1000:$0.9140
    • 500:$1.1600
    • 100:$1.5500
    • 10:$2.2100
    • 1:$3.5400
    AUIRF7309QTR
    DISTI # 2709982    		Infineon Technologies AGMOSFET, AEC-Q101, DUAL N&PCH, 30V, SOIC
    RoHS: Compliant    		1138
    • 500:£0.6970
    • 250:£0.7460
    • 100:£0.7950
    • 25:£1.0300
    • 5:£1.1300
    AUIRF7309QTR
    DISTI # 2709982    		Infineon Technologies AGMOSFET, AEC-Q101, DUAL N&PCH, 30V, SOIC
    RoHS: Compliant    		1133
    • 1000:$1.3000
    • 500:$1.6500
    • 100:$2.1300
    • 10:$2.6900
    • 1:$3.0300
    Immagine Parte # Descrizione
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    Mfr.#: LM5146QRGYTQ1

    OMO.#: OMO-LM5146QRGYTQ1-TEXAS-INSTRUMENTS

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    Mfr.#: CRCW1206220RFKEAC

    OMO.#: OMO-CRCW1206220RFKEAC-VISHAY-DALE

    		 D25/CRCW1206-C 100 220R 1% ET1
    DHN-04F-T-V

    Mfr.#: DHN-04F-T-V

    OMO.#: OMO-DHN-04F-T-V-1190

    		 Switch DIP (Alt: DHN-04F-T-V)
    THS3491IRGTT

    Mfr.#: THS3491IRGTT

    OMO.#: OMO-THS3491IRGTT-TEXAS-INSTRUMENTS

    		 LINEAR OPERATIONAL (OP) AMP
    Disponibilità
    Azione:
    Available
    Su ordine:
    1989
    Inserisci la quantità:
    Il prezzo attuale di AUIRF7309QTR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    1,55 USD
    1,55 USD
    10
    1,32 USD
    13,20 USD
    100
    1,06 USD
    106,00 USD
    500
    0,93 USD
    463,50 USD
    1000
    0,77 USD
    768,00 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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