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2N7002E-7-F

2N7002E-7-F
Mfr. #:
2N7002E-7-F
Produttore:
Diodes Incorporated
Descrizione:
IGBT Transistors MOSFET N-Channel
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
2N7002E-7-F Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
2N7002E-7-F maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Diodi incorporati
categoria di prodotto
FET - Single
Serie
2N7002
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.000282 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-236-3, SC-59, SOT-23-3
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
SOT-23-3
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
370mW
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
60V
Ingresso-Capacità-Ciss-Vds
50pF @ 25V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
250mA (Ta)
Rds-On-Max-Id-Vgs
3 Ohm @ 250mA, 10V
Vgs-th-Max-Id
2.5V @ 250μA
Gate-Carica-Qg-Vgs
0.22nC @ 4.5V
Pd-Power-Dissipazione
300 mW
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
250 mA
Vds-Drain-Source-Breakdown-Voltage
60 V
Rds-On-Drain-Source-Resistenza
4 Ohms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
11 ns
Tempo di ritardo all'accensione tipico
7 ns
Modalità canale
Aumento
Tags
2N7002E-7, 2N7002E, 2N7002, 2N700, 2N70, 2N7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 150, N-Channel MOSFET, 300 mA, 60 V, 3-Pin SOT-23 Diodes Inc 2N7002E-7-F
***et
Transistor MOSFET N-CH 60V 300mA 3-Pin SOT-23 T/R
***p One Stop Global
Trans MOSFET N-CH 60V 0.3A Automotive 3-Pin SOT-23 T/R
***ure Electronics
N-Channel 60 V 4 Ohm MosFet Surface Mount - SOT-23-3
***ied Electronics & Automation
N-Channel Enhancement MOSFET SOT-23
*** Source Electronics
MOSFET N-CH 60V 0.25A SOT23-3
***ser
MOSFETs - Low Threshold Voltage N-Channel
Power MOSFETs
Diodes Inc. continues to expand its portfolio of power MOSFETs with new N- and P-channel devices with breakdown voltages up to 450V and a wide range of package options. The Diodes Inc. MOSFET portfolio is ideally suited to a range of applications, including DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive.
Parte # Mfg. Descrizione Azione Prezzo
2N7002E-7-F
DISTI # 2N7002E-FDICT-ND		Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		47661In Stock
  • 1000:$0.0619
  • 500:$0.0891
  • 100:$0.1627
  • 10:$0.2870
  • 1:$0.3100
2N7002E-7-F
DISTI # 2N7002E-FDIDKR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		47661In Stock
  • 1000:$0.0619
  • 500:$0.0891
  • 100:$0.1627
  • 10:$0.2870
  • 1:$0.3100
2N7002E-7-F
DISTI # 2N7002E-FDITR-ND		Diodes IncorporatedMOSFET N-CH 60V 0.25A SOT23-3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		45000In Stock
  • 3000:$0.0546
2N7002E-7-F
DISTI # 2N7002E-7-F		Diodes IncorporatedTrans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: 2N7002E-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.0249
  • 6000:$0.0236
  • 12000:$0.0225
  • 18000:$0.0215
  • 30000:$0.0210
2N7002E-7-F
DISTI # 2N7002E-7-F		Diodes IncorporatedTrans MOSFET N-CH 60V 0.3A 3-Pin SOT-23 T/R (Alt: 2N7002E-7-F)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.0326
  • 6000:€0.0325
  • 12000:€0.0324
  • 18000:€0.0323
  • 30000:€0.0284
2N7002E-7-F
DISTI # 70550310		Diodes IncorporatedN-Channel Enhancement MOSFET SOT-23
RoHS: Compliant		0
  • 750:$0.0560
  • 1500:$0.0410
  • 2250:$0.0360
  • 3000:$0.0330
2N7002E-7-F
DISTI # 621-2N7002E-7-F		Diodes IncorporatedMOSFET N-Channel
RoHS: Compliant		44936
  • 1:$0.2700
  • 10:$0.1800
  • 100:$0.0750
  • 1000:$0.0520
  • 3000:$0.0400
2N7002E-7
DISTI # 621-2N7002E-7		Diodes IncorporatedMOSFET N-Channel
RoHS: Not compliant		0
    2N7002E-7-F
    DISTI # 8228641P    		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MOSFET SOT-23, RL13350
    • 750:£0.0510
    • 1500:£0.0440
    2N7002E-7-F
    DISTI # 8228641    		Zetex / Diodes IncN-CHANNEL ENHANCEMENT MOSFET SOT-23, PK7950
    • 150:£0.0550
    • 750:£0.0510
    • 1500:£0.0440
    2N7002E-7-F
    DISTI # 2N7002E-7-F    		Diodes IncorporatedTransistor: N-MOSFET,unipolar,60V,0.2A,0.37W,SOT2323
    • 10:$0.0557
    • 50:$0.0376
    • 250:$0.0332
    • 1000:$0.0299
    • 3000:$0.0279
    2N7002E-7-F
    DISTI # XSFP00000139057    		Diodes IncorporatedSmall Signal Field-Effect Transistor,0.24AI(D),60V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET
    RoHS: Compliant    		12114
    • 6000:$0.0440
    • 12114:$0.0400
    Immagine Parte # Descrizione
    2N7002VA

    Mfr.#: 2N7002VA

    OMO.#: OMO-2N7002VA

    		 MOSFET N-Chan Enhancement Mode Field Effect
    2N7002-7-F/2N7002K-7

    Mfr.#: 2N7002-7-F/2N7002K-7

    OMO.#: OMO-2N7002-7-F-2N7002K-7-1190

    		 Nuovo e originale
    2N7002-F

    Mfr.#: 2N7002-F

    OMO.#: OMO-2N7002-F-1190

    		 INSTOCK
    2N7002BKS

    Mfr.#: 2N7002BKS

    OMO.#: OMO-2N7002BKS-1190

    		 MOSFET, NN CHANNEL, 60V, 0.3A, SOT363, Transistor Polarity:N Channel, Continuous Drain Current Id:300mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:10V, T
    2N7002BKW

    Mfr.#: 2N7002BKW

    OMO.#: OMO-2N7002BKW-1190

    		 MOSFET, N CHANNEL, 60V, 0.31A, SOT323, Transistor Polarity:N Channel, Continuous Drain Current Id:310mA, Drain Source Voltage Vds:60V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:10V, T
    2N7002LT3

    Mfr.#: 2N7002LT3

    OMO.#: OMO-2N7002LT3-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 0.115A SOT-23
    2N7002MTF

    Mfr.#: 2N7002MTF

    OMO.#: OMO-2N7002MTF-ON-SEMICONDUCTOR

    		 MOSFET N-CH 60V 0.115A SOT-23
    2N7002DW

    Mfr.#: 2N7002DW

    OMO.#: OMO-2N7002DW-ON-SEMICONDUCTOR

    		 MOSFET 2N-CH 60V 0.115A SC70-6
    2N7002VC-7

    Mfr.#: 2N7002VC-7

    OMO.#: OMO-2N7002VC-7-DIODES

    		 IGBT Transistors MOSFET Dual N-Channel
    2N7002-T1-E3-CUT TAPE

    Mfr.#: 2N7002-T1-E3-CUT TAPE

    OMO.#: OMO-2N7002-T1-E3-CUT-TAPE-1190

    		 Nuovo e originale
    Disponibilità
    Azione:
    Available
    Su ordine:
    5000
    Inserisci la quantità:
    Il prezzo attuale di 2N7002E-7-F è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    0,03 USD
    0,03 USD
    10
    0,03 USD
    0,29 USD
    100
    0,03 USD
    2,76 USD
    500
    0,03 USD
    13,00 USD
    1000
    0,02 USD
    24,50 USD
    A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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