IRF640NSTRR

IRF640NSTRR
Mfr. #:
IRF640NSTRR
Produttore:
IR
Descrizione:
18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IRF640NSTRR Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore
IR
categoria di prodotto
FET - Single
Confezione
Bobina
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-252-3
Tecnologia
si
Numero di canali
1 Channel
Configurazione
Separare
Tipo a transistor
1 N-Channel
Pd-Power-Dissipazione
150 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
5.5 ns
Ora di alzarsi
19 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
18 A
Vds-Drain-Source-Breakdown-Voltage
200 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
2 V to 4 V
Rds-On-Drain-Source-Resistenza
150 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
23 ns
Tempo di ritardo all'accensione tipico
10 ns
Qg-Gate-Carica
44.7 nC
Transconduttanza diretta-Min
6.8 S
Modalità canale
Aumento
Tags
IRF640NSTRR, IRF640NST, IRF640NS, IRF640N, IRF640, IRF64, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
***et
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 200V 18A D2PAK
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2-PAK ;RoHS Compliant: No
Parte # Mfg. Descrizione Azione Prezzo
IRF640NSTRRPBF
DISTI # V72:2272_13890585
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 500:$0.6838
  • 250:$0.7310
  • 100:$0.7561
  • 25:$0.9265
  • 10:$0.9304
  • 1:$1.0402
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
560In Stock
  • 100:$1.1972
  • 10:$1.5150
  • 1:$1.7100
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
560In Stock
  • 100:$1.1972
  • 10:$1.5150
  • 1:$1.7100
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 200V 18A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
Limited Supply - Call
  • 800:$0.7875
IRF640NSTRRPBF
DISTI # 27018660
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 500:$0.6838
  • 250:$0.7310
  • 100:$0.7561
  • 25:$0.9265
  • 15:$0.9304
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF640NSTRRPBF)
RoHS: Compliant
Min Qty: 1600
Container: Reel
Americas - 800
  • 1600:$0.6039
  • 3200:$0.6019
  • 4800:$0.6009
  • 8000:$0.5989
  • 16000:$0.5979
IRF640NSTRRPBF
DISTI # SP001561802
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001561802)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 800
  • 800:€0.5599
  • 1600:€0.4579
  • 3200:€0.4199
  • 4800:€0.3869
  • 8000:€0.3599
IRF640NSTRRPBF
DISTI # IRF640NSTRRPBF
Infineon Technologies AGTrans MOSFET N-CH 200V 18A 3-Pin(2+Tab) D2PAK T/R (Alt: IRF640NSTRRPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
  • 800:$0.4738
  • 1600:$0.4543
  • 2400:$0.4482
  • 4000:$0.4307
  • 8000:$0.4252
  • 20000:$0.4146
  • 40000:$0.4045
IRF640NSTRRPBF
DISTI # 70017682
Infineon Technologies AGMOSFET,Power,N-Ch,VDSS 200V,RDS(ON) 0.15Ohm,ID 18A,D2Pak,PD 150W,VGS +/-20V,-55
RoHS: Compliant
0
  • 800:$0.9960
IRF640NSTRRPBFInfineon Technologies AGSingle N-Channel 200 V 0.15 Ohm 67nC HEXFET Power Mosfet - D2PAK
RoHS: Compliant
72Cut Tape/Mini-Reel
  • 1:$0.7900
  • 50:$0.6550
  • 100:$0.6350
  • 250:$0.6050
  • 500:$0.5700
IRF640NSTRRPBF
DISTI # 942-IRF640NSTRRPBF
Infineon Technologies AGMOSFET 200V 1 N-CH HEXFET 150mOhms 44.7nC
RoHS: Compliant
855
  • 1:$1.3500
  • 10:$1.1600
  • 100:$0.8850
  • 500:$0.7820
  • 800:$0.6170
IRF640NSTRRInternational Rectifier18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET1280
  • 607:$0.2860
  • 110:$0.3300
  • 1:$1.1000
IRF640NSTRRInternational Rectifier18 A, 200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET160
  • 112:$1.6758
  • 11:$1.7955
  • 1:$3.5910
IRF640NSTRRInternational Rectifier 1600
  • 7:$0.8250
  • 26:$0.5363
  • 95:$0.3094
  • 325:$0.2640
  • 702:$0.2310
IRF640NSTRRPBF
DISTI # XSFT00000025436
Infineon Technologies AG 
RoHS: Compliant
14400
  • 800:$0.6300
IRF640NSTRRPBF
DISTI # C1S322000481514
Infineon Technologies AGTrans MOSFET N-CH Si 200V 18A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
800
  • 250:$0.7302
  • 100:$0.7554
  • 25:$0.9257
  • 10:$0.9299
Immagine Parte # Descrizione
IRF644STRRPBF

Mfr.#: IRF644STRRPBF

OMO.#: OMO-IRF644STRRPBF

MOSFET N-Chan 250V 14 Amp
IRF644PBF

Mfr.#: IRF644PBF

OMO.#: OMO-IRF644PBF

MOSFET N-CH 250V HEXFET MOSFET
IRF640BPF

Mfr.#: IRF640BPF

OMO.#: OMO-IRF640BPF-1190

Nuovo e originale
IRF640L

Mfr.#: IRF640L

OMO.#: OMO-IRF640L-VISHAY

MOSFET N-CH 200V 18A TO-262
IRF640NSTRLPBF,IRF640STR

Mfr.#: IRF640NSTRLPBF,IRF640STR

OMO.#: OMO-IRF640NSTRLPBF-IRF640STR-1190

Nuovo e originale
IRF642

Mfr.#: IRF642

OMO.#: OMO-IRF642-1190

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644L

Mfr.#: IRF644L

OMO.#: OMO-IRF644L-VISHAY

MOSFET N-CH 250V 14A TO-262
IRF644SPBF

Mfr.#: IRF644SPBF

OMO.#: OMO-IRF644SPBF-VISHAY

MOSFET N-CH 250V 14A D2PAK
IRF645

Mfr.#: IRF645

OMO.#: OMO-IRF645-1190

Power Field-Effect Transistor, 13A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF644STRRPBF

Mfr.#: IRF644STRRPBF

OMO.#: OMO-IRF644STRRPBF-VISHAY

IGBT Transistors MOSFET N-Chan 250V 14 Amp
Disponibilità
Azione:
Available
Su ordine:
2500
Inserisci la quantità:
Il prezzo attuale di IRF640NSTRR è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,32 USD
0,32 USD
10
0,31 USD
3,06 USD
100
0,29 USD
28,96 USD
500
0,27 USD
136,75 USD
1000
0,26 USD
257,40 USD
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