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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| SEM2105 | Samsung Semiconductor | 13219 |
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: SEMS-DC09WM OMO.#: OMO-SEMS-DC09WM-1190 |
Nuovo e originale |
|
|
Mfr.#: SEM140 OMO.#: OMO-SEM140-1190 |
Nuovo e originale |
|
|
Mfr.#: SEM3310 OMO.#: OMO-SEM3310-1190 |
Nuovo e originale |
|
|
Mfr.#: SEM5026 OMO.#: OMO-SEM5026-1190 |
Nuovo e originale |
|
|
Mfr.#: SEM9926 OMO.#: OMO-SEM9926-1190 |
Nuovo e originale |
|
|
Mfr.#: SEMIX151GB12T4S OMO.#: OMO-SEMIX151GB12T4S-1190 |
Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel |
|
|
Mfr.#: SEMIX201GD128DS OMO.#: OMO-SEMIX201GD128DS-1190 |
Nuovo e originale |
|
|
Mfr.#: SEMIX202GB128DS OMO.#: OMO-SEMIX202GB128DS-1190 |
Nuovo e originale |
|
|
Mfr.#: SEMIX653GB176HDS OMO.#: OMO-SEMIX653GB176HDS-1190 |
IGBT POWER MODULE, Transistor Polarity:N Channel, DC Collector Current:619A, Collector Emitter Saturation Voltage Vce(on):2.45V, Power Dissipation Pd:-, Collector Emitter Voltage V(br)ceo:1.2V, |
|
|
Mfr.#: SEMQN061 OMO.#: OMO-SEMQN061-1190 |
Nuovo e originale |