SI7629DN-T1-GE3

Mfr. #:: SI7629DN-T1-GE3
Produttore:: Vishay
Descrizione:: MOSFET P-CH 20V 35A 1212-8 PPAK
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI7629DN-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI7629DN-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Single

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI7629DN-GE3

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: PowerPAKR 1212-8

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: PowerPAKR 1212-8

Configurazione: Separare

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 52W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: 5790pF @ 10V

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 35A (Tc)

Rds-On-Max-Id-Vgs: 4.6 mOhm @ 20A, 10V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Carica-Qg-Vgs: 177nC @ 10V

Pd-Power-Dissipazione: 52 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: - 35 A

Vds-Drain-Source-Breakdown-Voltage: - 20 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: - 1.5 V

Rds-On-Drain-Source-Resistenza: 3.8 mOhms

Polarità del transistor: Canale P

Qg-Gate-Carica: 118 nC

Transconduttanza diretta-Min: 64 S

Tags: SI7629DN-T, SI7629, SI762, SI76, SI7

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI7629DN-T1-GE3 Maggiori informazioni

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI7629DN-T1-GE3 DISTI # V72:2272_09215664	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4923	3000:$0.4581 1000:$0.4798 500:$0.5511 250:$0.6026 100:$0.6235 25:$0.7641 10:$0.7672 1:$0.8873
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6691In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6691In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 20V 35A 1212-8 PPAK RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.4928
SI7629DN-T1-GE3 DISTI # 25789888	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R RoHS: Compliant	4923	3000:$0.4581 1000:$0.4798 500:$0.5511 250:$0.6026 100:$0.6235 25:$0.7641 16:$0.7672
SI7629DN-T1-GE3 DISTI # SI7629DN-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 20V 21.3A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7629DN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3229 6000:$0.3129 12000:$0.3009 18000:$0.2919 30000:$0.2839
SI7629DN-T1-GE3 DISTI # 86R3929	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET	0	1:$0.5150 3000:$0.5150
SI7629DN-T1-GE3. DISTI # 30AC0202	Vishay Intertechnologies	P-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.5150 3000:$0.5150
SI7629DN-T1-GE3 DISTI # 781-SI7629DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V 35A 52W RoHS: Compliant	3993	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.5350 3000:$0.5340
SI7629DNT1GE3	Vishay Intertechnologies	RoHS: Compliant	Europe - 3000
SI7629DN-T1-GE3	Vishay Intertechnologies	MOSFET 20V 35A 52W RoHS: Compliant	Americas -
SI7629DN-T1-GE3 DISTI # C1S803601953764	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4923	250:$0.6219 100:$0.6236 25:$0.7643 10:$0.7674

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI7629DN-T1-GE3 OMO.#: OMO-SI7629DN-T1-GE3	MOSFET 20V 35A 52W
	Mfr.#: SI7629DN-T1-GE3-CUT TAPE OMO.#: OMO-SI7629DN-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI7629DN-T1 OMO.#: OMO-SI7629DN-T1-1190	Nuovo e originale
	Mfr.#: SI7629DN-T1-GE3 OMO.#: OMO-SI7629DN-T1-GE3-VISHAY	MOSFET P-CH 20V 35A 1212-8 PPAK
	Mfr.#: SI7629DNT1GE3 OMO.#: OMO-SI7629DNT1GE3-1190	Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Disponibilità

Azione:: Available
Su ordine:: 2000
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Il prezzo attuale di SI7629DN-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,43 USD~~; ~~0,43 USD~~

10: ~~0,40 USD~~; ~~4,05 USD~~

100: ~~0,38 USD~~; ~~38,33 USD~~

500: ~~0,36 USD~~; ~~181,00 USD~~

1000: ~~0,34 USD~~; ~~340,70 USD~~

Iniziare con

SI7629DN-T 3
SI7629 4
SI762 12
SI76 155
SI7 1547

SI7629DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes