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LM5113QDPRRQ1

LM5113QDPRRQ1
Mfr. #:
LM5113QDPRRQ1
Descrizione:
Gate Drivers 5A 100V HALF-BRIDGEGATEDRIVER Q GRADE
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
LM5113QDPRRQ1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
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ECAD Model:
Maggiori informazioni:
LM5113QDPRRQ1 maggiori informazioni LM5113QDPRRQ1 Product Details
Attributo del prodotto
Valore attributo
Produttore:
Texas Instruments
Categoria di prodotto:
Autisti del cancello
RoHS:
Y
Prodotto:
Autisti a mezzo ponte
Tipo:
Lato alto, lato basso
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
WSON-10
Numero di conducenti:
2 Driver
Numero di uscite:
2 Output
Corrente di uscita:
5 A
Ora di alzarsi:
7 ns
Tempo di caduta:
3.5 ns
Tensione di alimentazione - Min:
4.5 V
Tensione di alimentazione - Max:
5.5 V
Corrente di alimentazione operativa:
2 mA
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 125 C
Serie:
LM5113-Q1
Confezione:
Bobina
Intervallo operativo di temperatura:
- 40 C to + 125 C
Tecnologia:
si
Marca:
Texas Instruments
Tempo massimo di ritardo allo spegnimento:
26.5 ns
Tempo massimo di ritardo all'accensione:
28 ns
Tipologia di prodotto:
Autisti del cancello
Quantità confezione di fabbrica:
4500
sottocategoria:
PMIC - CI di gestione dell'alimentazione
Tags
LM5113, LM511, LM51, LM5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***o
    S***o
    RU

    On the quality of writing

    2019-08-06
    J***k
    J***k
    KR

    Fast delivery summer

    2019-05-07
***ical
Driver 5A 2-OUT High and Low Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R
***et Europe
100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 10-Pin WSON T/R
***as Instruments
Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs 10-WSON -40 to 125
***i-Key
IC GATE DRVR HALF-BRIDGE 10WSON
***ark
5A 100V Half-Bridgegatedriver Q Grade
***AS INST
The LM5113-Q1 is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs or silicon MOSFETs in a synchronous buck, boost, or half bridge configuration for automotive applications. The device has an integrated 100-V bootstrap diode and independent inputs for the high-side and low-side outputs for maximum control flexibility. The high-side bias voltage is internally clamped at 5.2 V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the device are TTL-logic compatible, which can withstand input voltages up to 14 V regardless of the VDD voltage. The LM5113-Q1 has split-gate outputs, providing flexibility to adjust the turnon and turnoff strength independently.
***NS
In addition, the strong sink capability of the LM5113-Q1 maintains the gate in the low state, preventing unintended turnon during switching. The LM5113-Q1 can operate up to several MHz. The LM5113-Q1 is available in a standard 10-pin WSON package with an exposed pad to aid power dissipation.
LM5113/LM5113-Q1 Half-Bridge Gate Driver
OMO Electronic LM5113/LM5113-Q1 Half-Bridge Gate Driver is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of driving a high-side enhancement mode GaN FET operating up to 100V. The high-side bias voltage is generated using a bootstrap technique and is internally clamped at 5.2V. This clamping prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement mode GaN FETs. The inputs of the LM5113/LM5113-Q1 are TTL logic compatible and can withstand input voltages up to 14V regardless of the VDD voltage. The LM5113/LM5113-Q1 has split gate outputs, providing flexibility to adjust the turn-on and turn-off strength independently. The LM5113-Q1 devices are AEC-Q100 qualified for automotive applications.
Parte # Descrizione Azione Prezzo
LM5113QDPRRQ1
DISTI # V72:2272_17086936		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R1421
  • 1000:$2.0610
  • 500:$2.4270
  • 250:$2.8200
  • 100:$2.9480
  • 25:$3.6300
  • 10:$3.6580
  • 1:$4.4770
LM5113QDPRRQ1
DISTI # V36:1790_17086936		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R0
  • 4500000:$1.8750
  • 2250000:$1.8760
  • 450000:$1.9440
  • 45000:$2.0420
  • 4500:$2.0580
LM5113QDPRRQ1
DISTI # V39:1801_17086936		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R0
  • 4500000:$1.8750
  • 2250000:$1.8760
  • 450000:$1.9440
  • 45000:$2.0420
  • 4500:$2.0580
LM5113QDPRRQ1
DISTI # 296-51311-1-ND		IC HALF-BRIDGE GATE DRVR 10WSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		3421In Stock
  • 1000:$2.2308
  • 500:$2.6451
  • 100:$3.1071
  • 10:$3.7920
  • 1:$4.2200
LM5113QDPRRQ1
DISTI # 296-51311-6-ND		IC HALF-BRIDGE GATE DRVR 10WSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		3421In Stock
  • 1000:$2.2308
  • 500:$2.6451
  • 100:$3.1071
  • 10:$3.7920
  • 1:$4.2200
LM5113QDPRRQ1
DISTI # 296-51311-2-ND		IC HALF-BRIDGE GATE DRVR 10WSON
RoHS: Compliant
Min Qty: 4500
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4500:$2.0575
LM5113QDPRRQ1
DISTI # 31725099		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R9000
  • 4500:$2.0580
LM5113QDPRRQ1
DISTI # 31667355		Driver 5A 2-OUT Hi/Lo Side Full Brdg/Half Brdg Inv/Non-Inv Automotive 10-Pin WSON EP T/R1421
  • 4:$4.4770
LM5113QDPRRQ1
DISTI # LM5113QDPRRQ1		100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 10-Pin WSON T/R (Alt: LM5113QDPRRQ1)
RoHS: Compliant
Min Qty: 4500
Container: Tape and Reel		Europe - 0
  • 45000:€1.7900
  • 27000:€1.8900
  • 18000:€1.9900
  • 9000:€2.2900
  • 4500:€2.5900
LM5113QDPRRQ1
DISTI # LM5113QDPRRQ1		100V Half-Bridge Gate Driver for Enhancement Mode GaN FETs 5A 10-Pin WSON T/R - Tape and Reel (Alt: LM5113QDPRRQ1)
RoHS: Compliant
Min Qty: 4500
Container: Reel		Americas - 0
  • 27000:$1.8900
  • 45000:$1.8900
  • 18000:$1.9900
  • 9000:$2.0900
  • 4500:$2.1900
LM5113QDPRRQ1Automotive, 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs8040
  • 1000:$1.7600
  • 750:$1.8400
  • 500:$2.1800
  • 250:$2.5700
  • 100:$2.7400
  • 25:$3.1300
  • 10:$3.3600
  • 1:$3.7300
LM5113QDPRRQ1
DISTI # 595-LM5113QDPRRQ1		Gate Drivers 5A 100V HALF-BRIDGEGATEDRIVER Q GRADE
RoHS: Compliant		1595
  • 1:$4.1000
  • 10:$3.6800
  • 100:$3.0100
  • 250:$2.8300
  • 500:$2.5600
  • 1000:$2.1600
  • 2500:$2.0500
  • 4500:$1.9800
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 Thick Film Resistors - SMD 1/10Watt 2.2Kohms 1% Commercial Use
GRM188C81C225KA12D

Mfr.#: GRM188C81C225KA12D

OMO.#: OMO-GRM188C81C225KA12D-MURATA-ELECTRONICS

 Multilayer Ceramic Capacitors MLCC - SMD/SMT 0603 2.2uF 16volts X6S 10%
OPA2365AQDRQ1

Mfr.#: OPA2365AQDRQ1

OMO.#: OMO-OPA2365AQDRQ1-TEXAS-INSTRUMENTS

 Operational Amplifiers - Op Amps 2.2V,50MHz,Lo-Noise Sgl-Sply RR Op Amp
LL4148

Mfr.#: LL4148

OMO.#: OMO-LL4148-ON-SEMICONDUCTOR

 DIODE GEN PURP 100V 200MA SOD80
Disponibilità
Azione:
Available
Su ordine:
1984
Inserisci la quantità:
Il prezzo attuale di LM5113QDPRRQ1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
4,10 USD
4,10 USD
10
3,68 USD
36,80 USD
100
3,01 USD
301,00 USD
250
2,83 USD
707,50 USD
500
2,56 USD
1 280,00 USD
1000
2,16 USD
2 160,00 USD
2500
2,05 USD
5 125,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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