SI8409DB-T1-E1

Name: Vishay - SI8409DB-T1-E1
Brand: Vishay
SKU: OMO-3379421
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SI8409DB-T1-E1
Produttore:: Vishay
Descrizione:: MOSFET P-CH 30V 4.6A 2X2 4-MFP
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI8409DB-T1-E1 Scheda dati
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Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: Chip IC

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI8409DB-E1

Stile di montaggio: SMD/SMT

Nome depositato: TrenchFET/MICRO PIEDE

Pacchetto-Custodia: 4-XFBGA, CSPBGA

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 1 Channel

Pacchetto-dispositivo-fornitore: 4-Microfoot

Configurazione: Singolo Doppio Scarico

Tipo FET: MOSFET Canale P, ossido di metallo

Potenza-Max: 1.47W

Tipo a transistor: 1 P-Channel

Drain-to-Source-Voltage-Vdss: 30V

Ingresso-Capacità-Ciss-Vds: -

Funzione FET: Standard

Corrente-Continuo-Scarico-Id-25°C: 4.6A (Ta)

Rds-On-Max-Id-Vgs: 46 mOhm @ 1A, 4.5V

Vgs-th-Max-Id: 1.4V @ 250μA

Gate-Carica-Qg-Vgs: 26nC @ 4.5V

Pd-Power-Dissipazione: 1.47 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 35 ns

Ora di alzarsi: 35 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: - 3.6 A

Vds-Drain-Source-Breakdown-Voltage: - 30 V

Rds-On-Drain-Source-Resistenza: 1.052 Ohms

Polarità del transistor: Canale P

Tempo di ritardo allo spegnimento tipico: 140 ns

Tempo di ritardo all'accensione tipico: 20 ns

Qg-Gate-Carica: 17 nC

Transconduttanza diretta-Min: 6.4 S

Modalità canale: Aumento

Tags: SI840, SI84, SI8

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI8409DB-T1-E1 Descrizione

***ure Electronics: Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT

***ical: Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R

*** Source Electronics: MOSFET P-CH 30V 4.6A 2X2 4-MFP

***i-Key: MOSFET P-CH 30V 4.6A 4MICROFOOT

***ark: P Ch Mosfet, -30V, 6.3A, Micro Foot; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:6.3A; On Resistance Rds(On):0.065Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:12V Rohs Compliant: No

SI8409DB-T1-E1 Maggiori informazioni

MicroFoot® Power MOSFETs: Vishay Siliconix MicroFoot® Power MOSFETs offer low on-resistance (RDS(on)) in ultra-small and ultra-thin packages. The devices' compact outlines save PCB space and provide ultrathin profiles to enable slimmer and lighter portable electronics. Low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI8409DB-T1-E1 DISTI # V72:2272_09216553	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	4407	3000:$0.4274 1000:$0.4304 500:$0.5504 250:$0.6208 100:$0.6226 25:$0.7627 10:$0.7658 1:$0.8855
SI8409DB-T1-E1 DISTI # V36:1790_09216553	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4304
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1CT-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	13394In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1DKR-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	13394In Stock	1000:$0.5438 500:$0.6889 100:$0.8883 10:$1.1240 1:$1.2700
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1TR-ND	Vishay Siliconix	MOSFET P-CH 30V 4.6A 2X2 4-MFP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	12000In Stock	3000:$0.4928
SI8409DB-T1-E1 DISTI # 27003823	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	4407	3000:$0.4274 1000:$0.4304 500:$0.5504 250:$0.6208 100:$0.6226 25:$0.7627 16:$0.7658
SI8409DB-T1-E1 DISTI # 29546570	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4867
SI8409DB-T1-E1 DISTI # 30743480	Vishay Intertechnologies	Trans MOSFET P-CH Si 30V 4.6A 4-Pin Micro Foot T/R RoHS: Compliant	3000	3000:$0.4304
SI8409DB-T1-E1 DISTI # SI8409DB-T1-E1	Vishay Intertechnologies	Trans MOSFET P-CH 30V 4.6A 4-Pin Micro Foot T/R - Tape and Reel (Alt: SI8409DB-T1-E1) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4649 6000:$0.4509 12000:$0.4329 18000:$0.4209 30000:$0.4099
SI8409DB-T1-E1 DISTI # 18X0030	Vishay Intertechnologies	MOSFET, P CHANNEL, -30V, -4.6A, MICRO FOOT-4,Transistor Polarity:P Channel,Continuous Drain Current Id:-4.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.038ohm,Rds(on) Test Voltage Vgs:-4.5V,Power Dissipation Pd:1.47W, RoHS Compliant: Yes	0	1:$1.1200 10:$0.9220 25:$0.8510 50:$0.7790 100:$0.7080 500:$0.6090 1000:$0.4800
SI8409DB-T1-E1 DISTI # 51K7013	Vishay Intertechnologies	P CH MOSFET, -30V, 6.3A, MICRO FOOT,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.3A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):65mohm,Rds(on) Test Voltage Vgs:12V,Threshold Voltage Vgs:1.4V , RoHS Compliant: Yes	0	1:$0.4480 3000:$0.4480
SI8409DB-T1-E1. DISTI # 30AC0210	Vishay Intertechnologies	P-CHANNEL 30-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1:$0.4480 3000:$0.4480
SI8409DB-T1-E1	Vishay Intertechnologies	Single P-Channel 30 V 46 mO 17 nC Surface Mount Power Mosfet - MICRO FOOT RoHS: Compliant	6000Reel	3000:$0.4050
SI8409DB-T1-E1 DISTI # 781-SI8409DB-E1	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	4620	1:$1.1200 10:$0.9220 100:$0.7080 500:$0.6090 1000:$0.4800 3000:$0.4480
SI8409DB-T1-E1	Vishay Semiconductors	4600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET	2340	2052:$0.3750 445:$0.3900 1:$1.5000
SI8409DB-T1-E1	Vishay Siliconix		2925	5:$1.1250 19:$0.7313 70:$0.4219 239:$0.3600 515:$0.3150 1224:$0.2925
SI8409DB-T1-E1 DISTI # XSFP00000107897	Vishay Siliconix	RoHS: Compliant	4038	3000:$0.8100 4038:$0.7364
SI8409DB-T1-E1 DISTI # C1S803601003786	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4407	250:$0.6193 100:$0.6210 25:$0.7598 10:$0.7629
SI8409DB-T1-E1 DISTI # C1S803601906641	Vishay Intertechnologies	MOSFETs RoHS: Compliant	3000	3000:$0.4299
SI8409DB-T1-E1	Vishay Intertechnologies	MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6 RoHS: Compliant	Americas - 6000

Prodotti correlati

Immagine

Parte #

Descrizione

Mfr.#: SI8409DB-T1-E1

OMO.#: OMO-SI8409DB-T1-E1

MOSFET -30V Vds 12V Vgs MICRO FOOT 1.6 x 1.6

Mfr.#: SI8409DB-T1-E1

OMO.#: OMO-SI8409DB-T1-E1-VISHAY

MOSFET P-CH 30V 4.6A 2X2 4-MFP

Disponibilità

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Su ordine:: 1500
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Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,44 USD~~; ~~0,44 USD~~

10: ~~0,42 USD~~; ~~4,17 USD~~

100: ~~0,39 USD~~; ~~39,49 USD~~

500: ~~0,37 USD~~; ~~186,45 USD~~

1000: ~~0,35 USD~~; ~~351,00 USD~~

Iniziare con

SI840 48
SI84 503
SI8 2441

SI8409DB-T1-E1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes