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If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPP16CN10LGXKSA1 DISTI # IPP16CN10LGXKSA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 54A TO220-3 RoHS: Compliant Min Qty: 500 Container: Tube | Limited Supply - Call | |
| IPP16CN10LGXKSA1 DISTI # IPP16CN10LGXKSA1 | Infineon Technologies AG | - Bulk (Alt: IPP16CN10LGXKSA1) Min Qty: 511 Container: Bulk | Americas - 0 |
|
| IPP16CN10L G DISTI # 726-IPP16CN10LG | Infineon Technologies AG | MOSFET N-Ch 100V 54A TO220-3 RoHS: Compliant | 0 | |
| IPP16CN10LGHKSA1 DISTI # 726-IPP16CN10LGHKSA1 | Infineon Technologies AG | MOSFET RoHS: Compliant | 0 | |
| IPP16CN10LGXKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 54A I(D), 100V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Not Compliant | 14500 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPP16CN10N G OMO.#: OMO-IPP16CN10N-G |
MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 |
|
Mfr.#: IPP16CN10NG OMO.#: OMO-IPP16CN10NG-1190 |
Power Field-Effect Transistor, 53A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
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Mfr.#: IPP16CN10L OMO.#: OMO-IPP16CN10L-1190 |
Nuovo e originale |
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Mfr.#: IPP16CN10N OMO.#: OMO-IPP16CN10N-1190 |
Nuovo e originale |
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Mfr.#: IPP16CN10NG(16CN10N) |
Nuovo e originale |
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Mfr.#: IPP16CN10NG,IPP16CN10N,1 |
Nuovo e originale |
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Mfr.#: IPP16CN10NGHKSA1 , 2SD87 |
Nuovo e originale |
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Mfr.#: IPP16CN10NGXKSA1 , 2SD88 |
Nuovo e originale |
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Mfr.#: IPP16CNE8NG OMO.#: OMO-IPP16CNE8NG-1190 |
Nuovo e originale |
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Mfr.#: IPP16CN10N G OMO.#: OMO-IPP16CN10N-G-128 |
MOSFET N-Ch 100V 53A TO220-3 OptiMOS 2 |