SI4427BDY-T1-GE3

SI4427BDY-T1-GE3
Mfr. #:
SI4427BDY-T1-GE3
Produttore:
Vishay
Descrizione:
RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI4427BDY-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI4427BDY-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Tags
SI4427BDY-T, SI4427B, SI4427, SI442, SI44, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single P-Channel 30 V 0.0195 Ohm 70 nC 1.5 W Silicon SMT Mosfet - SOIC-8
***et
Trans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
***ment14 APAC
P CHANNEL MOSFET, -30V, 12.6A, SOIC
***ark
Transistor; Transistor Polarity:P Channel; Continuous Drain Current, Id:-12.6A; Drain Source Voltage, Vds:-30V; On Resistance, Rds(on):0.0195ohm; Rds(on) Test Voltage, Vgs:-2.5V; Threshold Voltage, Vgs Typ:-1.4V ;RoHS Compliant: Yes
Si4 MOSFETs
Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More
Parte # Mfg. Descrizione Azione Prezzo
SI4427BDY-T1-GE3
DISTI # V72:2272_09216487
Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant
4882
  • 3000:$0.6284
  • 1000:$0.6719
  • 500:$0.8261
  • 250:$0.9439
  • 100:$0.9542
  • 25:$1.1855
  • 10:$1.1996
  • 1:$1.4064
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3CT-ND
Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
4985In Stock
  • 1000:$0.9693
  • 500:$1.1698
  • 100:$1.5041
  • 10:$1.8720
  • 1:$2.0700
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3DKR-ND
Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
4985In Stock
  • 1000:$0.9693
  • 500:$1.1698
  • 100:$1.5041
  • 10:$1.8720
  • 1:$2.0700
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3TR-ND
Vishay SiliconixMOSFET P-CH 30V 9.7A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
2500In Stock
  • 2500:$0.8761
SI4427BDY-T1-GE3
DISTI # 27510656
Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant
4882
  • 3000:$0.6284
  • 1000:$0.6719
  • 500:$0.8261
  • 250:$0.9439
  • 100:$0.9542
  • 25:$1.1855
  • 10:$1.1996
SI4427BDY-T1-GE3
DISTI # SI4427BDY-T1-GE3
Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4427BDY-T1-GE3)
RoHS: Not Compliant
Min Qty: 2500
Container: Reel
Americas - 0
  • 2500:$0.7159
  • 5000:$0.6949
  • 10000:$0.6659
  • 15000:$0.6479
  • 25000:$0.6309
SI4427BDY-T1-GE3
DISTI # 15R5013
Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC, FULL REEL,Transistor Polarity:P Channel,Continuous Drain Current Id:-12.6A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-2.5V,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.8090
  • 2500:$0.8030
  • 5000:$0.7790
  • 10000:$0.7500
SI4427BDY-T1-GE3
DISTI # 26R1876
Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC,Transistor Polarity:P Channel,Continuous Drain Current Id:-9.7A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0088ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-600mV RoHS Compliant: Yes0
  • 1:$1.7300
  • 10:$1.4200
  • 25:$1.3100
  • 50:$1.2000
  • 100:$1.0900
  • 250:$1.0100
  • 500:$0.9360
SI4427BDY-T1-GE3
DISTI # 781-SI4427BDY-GE3
Vishay IntertechnologiesMOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
RoHS: Compliant
1466
  • 1:$1.7300
  • 10:$1.4200
  • 100:$1.0900
  • 500:$0.9360
  • 1000:$0.7390
  • 2500:$0.6900
SI4427BDY-T1-GE3.
DISTI # 2118917
Vishay IntertechnologiesP CHANNEL MOSFET, -30V, 12.6A, SOIC
RoHS: Compliant
0
  • 2500:£0.8220
SI4427BDY-T1-GE3
DISTI # C1S803601998828
Vishay IntertechnologiesTrans MOSFET P-CH 30V 9.7A 8-Pin SOIC N T/R
RoHS: Compliant
4882
  • 250:$0.8580
  • 100:$0.9534
  • 25:$1.0778
  • 10:$1.1975
SI4427BDY-T1-GE3..
DISTI # 8156751
Vishay Intertechnologies 
RoHS: Compliant
0
  • 1:$2.7500
  • 10:$2.2500
  • 100:$1.7300
  • 500:$1.4900
  • 1000:$1.1700
  • 2500:$1.1000
Immagine Parte # Descrizione
SI4427BDY-T1-E3

Mfr.#: SI4427BDY-T1-E3

OMO.#: OMO-SI4427BDY-T1-E3

MOSFET 30V 13.3A 3W
SI4427BDY-T1-GE3

Mfr.#: SI4427BDY-T1-GE3

OMO.#: OMO-SI4427BDY-T1-GE3

MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
SI4427BDY-T1-GE3

Mfr.#: SI4427BDY-T1-GE3

OMO.#: OMO-SI4427BDY-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 30V 12.6A 2.5W 12.5mohm @ 4.5V
SI4427BDY-T1-E3-CUT TAPE

Mfr.#: SI4427BDY-T1-E3-CUT TAPE

OMO.#: OMO-SI4427BDY-T1-E3-CUT-TAPE-1190

Nuovo e originale
SI4427BDY

Mfr.#: SI4427BDY

OMO.#: OMO-SI4427BDY-1190

Nuovo e originale
SI4427BDY-T1-E3

Mfr.#: SI4427BDY-T1-E3

OMO.#: OMO-SI4427BDY-T1-E3-VISHAY

MOSFET P-CH 30V 9.7A 8-SOIC
Disponibilità
Azione:
Available
Su ordine:
1500
Inserisci la quantità:
Il prezzo attuale di SI4427BDY-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
0,94 USD
0,94 USD
10
0,90 USD
8,96 USD
100
0,85 USD
84,83 USD
500
0,80 USD
400,60 USD
1000
0,75 USD
754,10 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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