RGT50TS65DGC11

RGT50TS65DGC11
Mfr. #:
RGT50TS65DGC11
Produttore:
ROHM Semiconductor
Descrizione:
IGBT Transistors 650V 25A IGBT Stop Trench
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
RGT50TS65DGC11 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
RGT50TS65DGC11 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Semiconduttore ROHM
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.65 V
Tensione massima dell'emettitore di gate:
30 V
Corrente continua del collettore a 25 C:
48 A
Pd - Dissipazione di potenza:
174 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
RGT50TS65D
Confezione:
Tubo
Corrente continua del collettore Ic Max:
48 A
Intervallo operativo di temperatura:
- 40 C to + 175 C
Marca:
Semiconduttore ROHM
Corrente continua del collettore:
25 A
Corrente di dispersione gate-emettitore:
+/- 200 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Parte # Alias:
RGT50TS65D
Unità di peso:
1.340411 oz
Tags
RGT50TS, RGT50T, RGT5, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 650V 48A 174000mW 3-Pin(3+Tab) TO-247N Bulk
***ment14 APAC
IGBT, SINGLE, 650V, 48A, TO-247N-3
***i-Key
IGBT TRNCH FIELD 650V 48A TO247N
***nell
IGBT, SINGLE, 650V, 48A, TO-247N-3; DC Collector Current: 48A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 174W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247N; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
***ical
Trans IGBT Chip N-CH 650V 60A 250000mW 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247AB
***emi
650V, 30A Field Stop Trench IGBT
*** Electronic Components
IGBT Transistors FS1TIGBT TO247 30A 650V
***rchild Semiconductor
Using novel field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performancefor solar inverter , UPS and digital power generator where low conduction and switching losses are essential.
***ical
Trans IGBT Chip N-CH 600V 47A 192000mW 3-Pin(3+Tab) TO-247AC Tube
*** Electronic Components
IGBT Transistors 600V UltraFast IGBT TO-247
***S
French Electronic Distributor since 1988
***i-Key Marketplace
IRGP6630D - IGBT WITH ULTRAFAST
***nell
IGBT, 600V, 47A, TO-247AC-3; DC Collector Current: 47A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 192W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3
***ark
IGBT Single Transistor, 53 A, 1.65 V, 200 W, 600 V, TO-247AC, 3
***(Formerly Allied Electronics)
IRGP6640D-EPBF, IGBT Transistor, 53 A 600 V, 3-Pin TO-247 | Infineon IRGP6640D-EPBF
***ical
Trans IGBT Chip N-CH 600V 53A 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, 600V, 53A, TO-247AC-3; DC Collector Current: 53A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AC; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ark
Igbt Single Transistor, 60 A, 1.55 V, 258 W, 650 V, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT M series, 650 V 30 A low loss
***nell
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descrizione Azione Prezzo
RGT50TS65DGC11
DISTI # RGT50TS65DGC11-ND
ROHM SemiconductorIGBT 650V 48A 174W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube
434In Stock
  • 2500:$1.6660
  • 1000:$1.7493
  • 500:$2.0742
  • 250:$2.3116
  • 100:$2.5615
  • 25:$2.8112
  • 10:$3.1240
  • 1:$3.5000
RGT50TS65DGC11
DISTI # RGT50TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 48A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGT50TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 450:$1.7900
  • 900:$1.6900
  • 1800:$1.5900
  • 2700:$1.4900
  • 4500:$1.4900
RGT50TS65DGC11
DISTI # 76Y4986
ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3,DC Collector Current:48A,Collector Emitter Saturation Voltage Vce(on):1.65V,Power Dissipation Pd:174W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes52
  • 500:$1.6500
  • 250:$1.7100
  • 100:$2.0300
  • 50:$2.3400
  • 25:$2.5000
  • 10:$2.8600
  • 1:$3.3000
RGT50TS65DGC11
DISTI # 755-RGT50TS65DGC11
ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
412
  • 1:$3.1500
  • 10:$2.6800
  • 100:$2.3300
  • 250:$2.2100
  • 500:$1.9800
  • 1000:$1.6700
  • 2500:$1.5900
  • 5000:$1.5300
RGT50TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 20:$3.6400
  • 6:$4.0040
  • 1:$5.4600
RGT50TS65DGC11ROHM SemiconductorIGBT Transistors 650V 25A IGBT Stop Trench
RoHS: Compliant
Americas -
    RGT50TS65DGC11
    DISTI # 2519782
    ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3
    RoHS: Compliant
    52
    • 500:£1.3600
    • 250:£1.5200
    • 100:£1.5900
    • 10:£1.8400
    • 1:£2.7000
    RGT50TS65DGC11
    DISTI # 2519782
    ROHM SemiconductorIGBT, SINGLE, 650V, 48A, TO-247N-3
    RoHS: Compliant
    52
    • 250:$3.3300
    • 100:$3.5100
    • 10:$4.0400
    • 1:$4.7500
    RGT50TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.4600
    • 10:$2.8400
    • 50:$2.2900
    • 100:$1.9500
    • 500:$1.8500
    • 1000:$1.8200
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    Disponibilità
    Azione:
    412
    Su ordine:
    2395
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