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IXGT25N160

IXGT25N160
Mfr. #:
IXGT25N160
Produttore:
Littelfuse
Descrizione:
IGBT Transistors 75 Amps 1600V 2.5 Rds
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IXGT25N160 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXGT25N160 DatasheetIXGT25N160 Datasheet (P4-P5)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
IXYS
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-268-3
Stile di montaggio:
SMD/SMT
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1600 V
Tensione di saturazione collettore-emettitore:
2.5 V
Tensione massima dell'emettitore di gate:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
IXGT25N160
Confezione:
Tubo
Corrente continua del collettore Ic Max:
75 A
Altezza:
5.1 mm
Lunghezza:
16.05 mm
Larghezza:
14 mm
Marca:
IXYS
Corrente continua del collettore:
75 A
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Unità di peso:
0.158733 oz
Tags
IXGT2, IXGT, IXG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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SILICON CARBIDE/SILICON HYBRID MODULES
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Trans IGBT Chip N-CH 1700V 12A 75000mW 3-Pin(2+Tab) TO-268
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TO-268 IGBTs ROHS
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Trans IGBT Chip N-CH 1200V 20A 85000mW 3-Pin(2+Tab) D3PAK Tube
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Xpt Igbt Copack, 1200V, 20A, To-268Aa
***nell
IGBT,1200V,20A,TO-268AA; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 2.1V; Power Dissipation Pd: 85W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-268AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 85W; Transistor Type: IGBT
Parte # Mfg. Descrizione Azione Prezzo
IXGT25N160
DISTI # IXGT25N160-ND		IXYS CorporationIGBT 1600V 75A 300W TO268
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$10.8780
IXGT25N160
DISTI # 747-IXGT25N160		IXYS CorporationIGBT Transistors 75 Amps 1600V 2.5 Rds
RoHS: Compliant		0
  • 1:$12.3200
  • 10:$11.2000
  • 25:$10.3600
  • 50:$9.7600
  • 100:$9.5200
  • 250:$8.6800
  • 500:$8.1200
Immagine Parte # Descrizione
IXGT25N160

Mfr.#: IXGT25N160

OMO.#: OMO-IXGT25N160

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Disponibilità
Azione:
Available
Su ordine:
5500
Inserisci la quantità:
Il prezzo attuale di IXGT25N160 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
12,32 USD
12,32 USD
10
11,20 USD
112,00 USD
25
10,36 USD
259,00 USD
50
9,76 USD
488,00 USD
100
9,52 USD
952,00 USD
250
8,68 USD
2 170,00 USD
500
8,12 USD
4 060,00 USD
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