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NGTB60N65FL2WG

NGTB60N65FL2WG
Mfr. #:
NGTB60N65FL2WG
Produttore:
ON Semiconductor
Descrizione:
IGBT Transistors 650V/60A FAST IGBT FSII
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NGTB60N65FL2WG Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB60N65FL2WG DatasheetNGTB60N65FL2WG Datasheet (P4-P6)NGTB60N65FL2WG Datasheet (P7-P8)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.64 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
100 A
Pd - Dissipazione di potenza:
595 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Confezione:
Tubo
Marca:
ON Semiconductor
Corrente di dispersione gate-emettitore:
200 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
30
sottocategoria:
IGBT
Unità di peso:
0.395068 oz
Tags
NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 100A 595000mW 3-Pin(3+Tab) TO-247 Tube
***ure Electronics
NGTB60N Series 650 V 100 A Through Hole Silicon IGBT - TO-247-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 650V V(BR)CES, N-Channel, TO-247
***emi
IGBT, 650V 60A Field Stop 2 IGBT
***nell
IGBT, SINGLE, N-CH, 650V, 100A, TO-247-3;
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
***nell
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)
Parte # Mfg. Descrizione Azione Prezzo
NGTB60N65FL2WG
DISTI # V99:2348_14671478		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		30
  • 1000:$6.5700
  • 500:$7.1860
  • 250:$8.0900
  • 100:$8.4179
  • 25:$9.7300
  • 10:$10.2040
  • 1:$11.2780
NGTB60N65FL2WG
DISTI # V36:1790_14671478		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WGOS-ND    		ON Semiconductor650V/60A IGBT FSII
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		121In Stock
    • 5010:$1.1922
    • 2520:$1.2071
    • 510:$1.5648
    • 120:$1.9046
    • 30:$2.2353
    • 10:$2.3700
    • 1:$2.6400
    NGTB60N65FL2WG
    DISTI # 31577063    		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		120
    • 120:$6.9179
    NGTB60N65FL2WG
    DISTI # 25891541    		ON SemiconductorTrans IGBT Chip N-CH 650V 100A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		30
    • 1:$11.2780
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor(Alt: NGTB60N65FL2WG)
    RoHS: Compliant
    Min Qty: 90    		Asia - 450
    • 4500:$7.9500
    • 2250:$8.0847
    • 900:$8.2241
    • 450:$8.5179
    • 270:$8.8333
    • 180:$9.1731
    • 90:$9.5400
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor- Bulk (Alt: NGTB60N65FL2WG)
    Min Qty: 48
    Container: Bulk    		Americas - 0
    • 480:$6.4900
    • 144:$6.6900
    • 240:$6.6900
    • 96:$6.7900
    • 48:$6.8900
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor- Rail/Tube (Alt: NGTB60N65FL2WG)
    RoHS: Compliant
    Min Qty: 120
    Container: Tube    		Americas - 0
    • 1200:$1.0509
    • 600:$1.0769
    • 360:$1.0909
    • 240:$1.1049
    • 120:$1.1129
    NGTB60N65FL2WG
    DISTI # NGTB60N65FL2WG    		ON Semiconductor(Alt: NGTB60N65FL2WG)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 250:€5.4600
    • 100:€7.2000
    • 50:€7.7500
    • 10:€8.2900
    • 5:€8.9600
    • 1:€9.6200
    NGTB60N65FL2WG
    DISTI # 81Y3910    		ON Semiconductor650V/60A FAST IGBT FSII T / TUBE0
    • 500:$6.2100
    • 250:$6.4000
    • 100:$7.6400
    • 50:$8.2100
    • 25:$8.7800
    • 10:$9.6400
    • 1:$10.7400
    NGTB60N65FL2WG.
    DISTI # 29AC8931    		ON SemiconductorDC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.64V,Power Dissipation Pd:595W,Collector Emitter Voltage V(br)ceo:650V,No. of Pins:3Pins,Operating Temperature Max:175°C,Product Range:-,MSL:- RoHS Compliant: Yes0
    • 1200:$5.7900
    • 600:$5.9900
    • 240:$6.0900
    • 1:$6.1900
    NGTB60N65FL2WG
    DISTI # 863-NGTB60N65FL2WG    		ON SemiconductorIGBT Transistors 650V/60A FAST IGBT FSII
    RoHS: Compliant    		240
    • 1:$11.3400
    • 10:$10.2500
    • 25:$9.7700
    • 100:$8.4900
    • 250:$8.1100
    • 500:$7.3900
    • 1000:$6.4400
    NGTB60N65FL2WGON SemiconductorInsulated Gate Bipolar Transistor
    RoHS: Compliant    		240
    • 1000:$1.2500
    • 500:$1.3200
    • 100:$1.3700
    • 25:$1.4300
    • 1:$1.5400
    NGTB60N65FL2WG
    DISTI # 1217872P    		ON SemiconductorTRANSISTOR IGBT N-CH 650V 60A TO247, TU150
    • 2000:£5.7300
    • 1000:£5.8700
    • 100:£6.9600
    • 10:£7.8600
    NGTB60N65FL2WG
    DISTI # 2563378    		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 100A, TO-247-34
    • 100:£6.4700
    • 50:£6.9600
    • 10:£7.4500
    • 5:£8.6500
    • 1:£9.2000
    NGTB60N65FL2WGON Semiconductor650V,60A,IGBT120
    • 1:$17.3600
    • 100:$11.0800
    • 500:$9.1400
    • 1000:$8.4000
    NGTB60N65FL2WG
    DISTI # 2563378    		ON SemiconductorIGBT, SINGLE, N-CH, 650V, 100A, TO-247-3
    RoHS: Compliant    		4
    • 1000:$9.7100
    • 500:$11.1400
    • 250:$12.2200
    • 100:$12.7900
    • 25:$14.7200
    • 10:$15.4500
    • 1:$17.0900
    Immagine Parte # Descrizione
    STGWA75M65DF2

    Mfr.#: STGWA75M65DF2

    OMO.#: OMO-STGWA75M65DF2

    		 IGBT Transistors PTD HIGH VOLTAGE
    STGWA75M65DF2

    Mfr.#: STGWA75M65DF2

    OMO.#: OMO-STGWA75M65DF2-STMICROELECTRONICS

    		 TRENCH GATE FIELD-STOP IGBT M SE
    Disponibilità
    Azione:
    240
    Su ordine:
    2223
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    Il prezzo attuale di NGTB60N65FL2WG è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
    Prezzo di riferimento (USD)
    Quantità
    Prezzo unitario
    est. Prezzo
    1
    11,34 USD
    11,34 USD
    10
    10,25 USD
    102,50 USD
    25
    9,77 USD
    244,25 USD
    100
    8,49 USD
    849,00 USD
    250
    8,11 USD
    2 027,50 USD
    500
    7,39 USD
    3 695,00 USD
    1000
    6,44 USD
    6 440,00 USD
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