SPB18P06P G

Mfr. #:: SPB18P06P G
Produttore:: Infineon Technologies
Descrizione:: MOSFET P-Ch -60V 18.6A D2PAK-2
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SPB18P06P G Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore:: Infineon

Categoria di prodotto:: MOSFET

RoHS:: Y

Tecnologia:: si

Stile di montaggio:: SMD/SMT

Pacchetto/custodia:: PG-TO-263-3

Numero di canali:: 1 Channel

Polarità del transistor:: Canale P

Vds - Tensione di rottura Drain-Source:: 60 V

Id - Corrente di scarico continua:: 18.7 A

Rds On - Resistenza Drain-Source:: 130 mOhms

Vgs th - Tensione di soglia gate-source:: 2.1 V

Vgs - Tensione Gate-Source:: 10 V

Qg - Carica cancello:: - 21 nC

Temperatura di esercizio minima:: - 55 C

Temperatura massima di esercizio:: + 175 C

Pd - Dissipazione di potenza:: 81.1 W

Configurazione:: Separare

Modalità canale:: Aumento

Nome depositato:: SIPMOS

Confezione:: Bobina

Altezza:: 4.4 mm

Lunghezza:: 10 mm

Serie:: SPB18P06

Tipo di transistor:: 1 P-Channel

Larghezza:: 9.25 mm

Marca:: Tecnologie Infineon

Transconduttanza diretta - Min:: 5 S

Tempo di caduta:: 11 ns

Tipologia di prodotto:: MOSFET

Ora di alzarsi:: 5.8 ns

Quantità confezione di fabbrica:: 1000

sottocategoria:: MOSFET

Tempo di ritardo allo spegnimento tipico:: 25 ns

Tempo di ritardo di accensione tipico:: 12 ns

Parte # Alias:: SP000102181 SPB18P06PGATMA1 SPB18P6PGXT

Unità di peso:: 0.139332 oz

Tags: SPB18P06PG, SPB18P, SPB18, SPB1, SPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SPB18P06P G DISTI # 30598905	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) TO-263 RoHS: Compliant	1168	21:$1.2188
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1CT-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.7A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	388In Stock	500:$0.7221 100:$0.8741 10:$1.1210 1:$1.2500
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1DKR-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.7A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	388In Stock	500:$0.7221 100:$0.8741 10:$1.1210 1:$1.2500
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1TR-ND	Infineon Technologies AG	MOSFET P-CH 60V 18.7A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Temporarily Out of Stock	10000:$0.4723 5000:$0.4907 2000:$0.5166 1000:$0.5535
SPB18P06P G DISTI # C1S322000037234	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1168	1000:$0.5020 500:$0.5350 200:$0.5780 100:$0.6100 50:$0.7060 10:$0.7310 5:$0.9750
SPB18P06PGATMA1 DISTI # V72:2272_06384573	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0
SPB18P06PGATMA1 DISTI # V36:1790_06384573	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$0.4093 500000:$0.4097 100000:$0.4537 10000:$0.5388 1000:$0.5535
SPB18P06P G DISTI # SP000102181	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R (Alt: SP000102181) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 1000	10000:€0.3559 6000:€0.3829 4000:€0.4149 2000:€0.4529 1000:€0.5539
SPB18P06P G DISTI # SPB18P06P G	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R (Alt: SPB18P06P G) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Asia - 0	50000:$0.3558 25000:$0.3604 10000:$0.3651 5000:$0.3699 3000:$0.3799 2000:$0.3904 1000:$0.4016
SPB18P06P G DISTI # SPB18P06PG	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R - Bulk (Alt: SPB18P06PG) RoHS: Not Compliant Min Qty: 715 Container: Bulk	Americas - 0	7150:$0.4439 3575:$0.4519 2145:$0.4679 1430:$0.4859 715:$0.5039
SPB18P06P G DISTI # SPB18P06PGATMA1	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R - Tape and Reel (Alt: SPB18P06PGATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	10000:$0.3569 6000:$0.3629 4000:$0.3759 2000:$0.3899 1000:$0.4049
SPB18P06P G DISTI # SPB18P06P	Infineon Technologies AG	Trans MOSFET P-CH 60V 18.6A 3-Pin TO-263 T/R - Bulk (Alt: SPB18P06P) RoHS: Not Compliant Min Qty: 758 Container: Bulk	Americas - 0	7580:$0.4189 3790:$0.4259 2274:$0.4409 1516:$0.4579 758:$0.4749
SPB18P06PGATMA1 DISTI # 47W3753	Infineon Technologies AG	MOSFET, P CHANNEL, 60V, 18.7A, TO-263,Transistor Polarity:P Channel,Continuous Drain Current Id:-18.7A,Drain Source Voltage Vds:-60V,On Resistance Rds(on):0.101ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	100	500:$0.7430 100:$0.8400 10:$1.0900 1:$1.2800
SPB18P06PGATMA1	Infineon Technologies AG	Single P-Channel 60 V 130 mOhm 21 nC SIPMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$0.4700 2000:$0.4450
SPB18P06P G DISTI # 726-SPB18P06PG	Infineon Technologies AG	MOSFET P-Ch -60V 18.6A D2PAK-2 RoHS: Compliant	1146	1:$1.1500 10:$0.9840 100:$0.7560 500:$0.6680 1000:$0.5280 2000:$0.4680 10000:$0.4500
SPB18P06PGATMA1 DISTI # 726-SPB18P06PGATMA1	Infineon Technologies AG	MOSFET P-Ch -60V 18.6A D2PAK-2 RoHS: Compliant	1591	1:$1.1500 10:$0.9840 100:$0.7560 500:$0.6680 1000:$0.5280 2000:$0.4680 10000:$0.4500
SPB18P06PG	Infineon Technologies AG	Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	98518	1000:$0.4600 500:$0.4900 100:$0.5100 25:$0.5300 1:$0.5700
SPB18P06PGATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	450	1000:$0.3600 500:$0.3700 100:$0.3900 25:$0.4100 1:$0.4400
SPB18P06PGATMA1 DISTI # 7533169P	Infineon Technologies AG	MOSFET P-CHANNEL 60V 18.6A SIPMOS TO263, RL	685	100:£0.5400 50:£0.6500 25:£0.6780 10:£0.7040
SPB18P06PGATMA1 DISTI # SPB18P06PGATMA1	Infineon Technologies AG	Transistor: P-MOSFET,unipolar,-60V,-18.6A,81.1W,PG-TO263-3	996	100:$0.4800 10:$0.5300 3:$0.5900 1:$0.6700
SPB18P06PG	Infineon Technologies AG	-60V,-18.6A,P Channel Power MOSFET	500	1:$0.8200 100:$0.6800 500:$0.6000 1000:$0.5900
SPB18P06PGATMA1 DISTI # 2212884	Infineon Technologies AG	MOSFET, P-CH, 60V, 18.7A, TO-263	1679	500:£0.5140 250:£0.5490 100:£0.5830 10:£0.8150 1:£1.0100
SPB18P06PGATMA1 DISTI # 2212884	Infineon Technologies AG	MOSFET, P-CH, 60V, 18.7A, TO-263 RoHS: Compliant	1704	1000:$0.7960 500:$1.0100 100:$1.1400 10:$1.4800 1:$1.7300
SPB18P06PGATMA1 DISTI # XSFP00000115904	Infineon Technologies AG	RISCMicrocontroller,32-Bit,FLASH,CORTEX-M3CPU,48MHz,CMOS, PQFP64 RoHS: Compliant	2000 in Stock0 on Order	2000:$0.6267 1000:$0.6714

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Disponibilità

Azione:: Available
Su ordine:: 1984
Inserisci la quantità:

Il prezzo attuale di SPB18P06P G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,15 USD~~; ~~1,15 USD~~

10: ~~0,98 USD~~; ~~9,84 USD~~

100: ~~0,76 USD~~; ~~75,60 USD~~

500: ~~0,67 USD~~; ~~334,00 USD~~

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SPB18P06P G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes