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FDS2670

FDS2670
Mfr. #:
FDS2670
Produttore:
ON Semiconductor / Fairchild
Descrizione:
MOSFET SO-8 N-CH 200V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
FDS2670 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
MOSFET
RoHS:
Y
Tecnologia:
si
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
SO-8
Numero di canali:
1 Channel
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
200 V
Id - Corrente di scarico continua:
3 A
Rds On - Resistenza Drain-Source:
130 mOhms
Vgs - Tensione Gate-Source:
20 V
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
2.5 W
Configurazione:
Separare
Modalità canale:
Aumento
Nome depositato:
PowerTrench
Confezione:
Bobina
Altezza:
1.75 mm
Lunghezza:
4.9 mm
Serie:
FDS2670
Tipo di transistor:
1 N-Channel
Tipo:
MOSFET
Larghezza:
3.9 mm
Marca:
ON Semiconductor / Fairchild
Transconduttanza diretta - Min:
15 S
Tempo di caduta:
25 ns
Tipologia di prodotto:
MOSFET
Ora di alzarsi:
8 ns
Quantità confezione di fabbrica:
2500
sottocategoria:
MOSFET
Tempo di ritardo allo spegnimento tipico:
30 ns
Tempo di ritardo di accensione tipico:
13 ns
Parte # Alias:
FDS2670_NL
Unità di peso:
0.004586 oz
Tags
FDS2670, FDS267, FDS26, FDS2, FDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 200 V 275 mOhm 43 nC 2.5 W PowerTrench SMT Mosfet - SOIC-8
***Semiconductor
N-Channel PowerTrench® MOSFET,200V, 3.0A, 130mΩ
***p One Stop Global
Trans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R
***o-Tech
MOSFET N-Channel 200V 3A SOIC8
*** Source Electronics
MOSFET N-CH 200V 3A 8-SO
***ser
MOSFETs SO-8 N-CH 200V
***et
SO8, SINGLE, 200V/20V
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3A; On Resistance, Rds(on):0.13ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 200V, 3A, SOIC-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:PowerTrench Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CA-N, 200V 3A, SOIC-8; Polarità Transistor:Canale N; Corrente Continua di Drain Id:3A; Tensione Drain Source Vds:200V; Resistenza di Attivazione Rds(on):0.1ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:2.5W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:PowerTrench Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descrizione Azione Prezzo
FDS2670
DISTI # V72:2272_06300811		ON SemiconductorSO8, SINGLE, 200V/20V3659
  • 3000:$0.7804
  • 1000:$0.8199
  • 500:$0.8594
  • 250:$0.9959
  • 100:$1.0368
  • 25:$1.1640
  • 10:$1.2932
  • 1:$1.6713
FDS2670
DISTI # V36:1790_06300811		ON SemiconductorSO8, SINGLE, 200V/20V0
  • 2500000:$0.6837
  • 1250000:$0.6839
  • 250000:$0.7007
  • 25000:$0.7289
  • 2500:$0.7336
FDS2670
DISTI # FDS2670CT-ND		ON SemiconductorMOSFET N-CH 200V 3A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2206In Stock
  • 1000:$0.8115
  • 500:$0.9794
  • 100:$1.1921
  • 10:$1.4830
  • 1:$1.6500
FDS2670
DISTI # FDS2670DKR-ND		ON SemiconductorMOSFET N-CH 200V 3A 8-SO
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2206In Stock
  • 1000:$0.8115
  • 500:$0.9794
  • 100:$1.1921
  • 10:$1.4830
  • 1:$1.6500
FDS2670
DISTI # FDS2670TR-ND		ON SemiconductorMOSFET N-CH 200V 3A 8-SO
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 12500:$0.6883
  • 5000:$0.7064
  • 2500:$0.7336
FDS2670
DISTI # 25743436		ON SemiconductorSO8, SINGLE, 200V/20V3659
  • 9:$1.6713
FDS2670
DISTI # FDS2670		ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R (Alt: FDS2670)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Asia - 0
  • 125000:$0.7377
  • 62500:$0.7500
  • 25000:$0.7759
  • 12500:$0.8036
  • 7500:$0.8333
  • 5000:$0.8654
  • 2500:$0.9000
FDS2670
DISTI # FDS2670		ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS2670)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.5719
  • 15000:$0.5859
  • 10000:$0.5939
  • 5000:$0.6009
  • 2500:$0.6049
FDS2670
DISTI # FDS2670		ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R - Bulk (Alt: FDS2670)
RoHS: Compliant
Min Qty: 385
Container: Bulk		Americas - 0
  • 3850:$0.8019
  • 1925:$0.8219
  • 1155:$0.8329
  • 770:$0.8439
  • 385:$0.8489
FDS2670
DISTI # FDS2670		ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R (Alt: FDS2670)
RoHS: Compliant
Min Qty: 2500
Container: Tape and Reel		Europe - 0
  • 25000:€0.5589
  • 15000:€0.6019
  • 10000:€0.6519
  • 5000:€0.7109
  • 2500:€0.8689
FDS2670
DISTI # 34C0155		ON SemiconductorTrans MOSFET N-CH 200V 3A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 34C0155)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 500:$1.0600
  • 250:$1.1300
  • 100:$1.2000
  • 50:$1.3000
  • 25:$1.3900
  • 10:$1.4900
  • 1:$1.7500
FDS2670
DISTI # 34C0155		ON SemiconductorN CHANNEL MOSFET, 200V, 3A, SOIC,Transistor Polarity:N Channel,Continuous Drain Current Id:3A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.13ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,No. of Pins:8Pins RoHS Compliant: Yes60
  • 1000:$0.8860
  • 500:$1.0600
  • 250:$1.1300
  • 100:$1.2000
  • 50:$1.3000
  • 25:$1.3900
  • 10:$1.4900
  • 1:$1.7500
FDS2670
DISTI # 512-FDS2670		ON SemiconductorMOSFET SO-8 N-CH 200V
RoHS: Compliant		3146
  • 1:$1.5300
  • 10:$1.3000
  • 100:$1.0400
  • 500:$0.9060
  • 1000:$0.7510
  • 2500:$0.6990
  • 5000:$0.6730
  • 10000:$0.6470
FDS2670ON SemiconductorSmall Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		2500
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
FDS2670Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		43085
  • 1000:$0.8600
  • 500:$0.9000
  • 100:$0.9400
  • 25:$0.9800
  • 1:$1.0500
FDS2670Fairchild Semiconductor Corporation 2500
    FDS2670Fairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 3A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		2500
      FDS2670
      DISTI # 2825187      		ON SemiconductorMOSFET, N-CH, 200V, 3A, SOIC-8
      RoHS: Compliant      		1655
      • 5000:$0.9780
      • 1000:$1.0100
      • 500:$1.1000
      • 250:$1.3300
      • 100:$1.6200
      • 25:$2.3700
      • 5:$2.7600
      FDS2670
      DISTI # 2825187      		ON SemiconductorMOSFET, N-CH, 200V, 3A, SOIC-81665
      • 500:£0.6980
      • 250:£0.7500
      • 100:£0.8010
      • 10:£1.0600
      • 1:£1.3400
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      Disponibilità
      Azione:
      Available
      Su ordine:
      1986
      Inserisci la quantità:
      Il prezzo attuale di FDS2670 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      1,53 USD
      1,53 USD
      10
      1,30 USD
      13,00 USD
      100
      1,04 USD
      104,00 USD
      500
      0,91 USD
      453,00 USD
      1000
      0,75 USD
      751,00 USD
      A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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