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NE6510179A-A

NE6510179A-A
Mfr. #:
NE6510179A-A
Produttore:
CEL
Descrizione:
RF JFET Transistors L&S Band GaAs HJFET
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
NE6510179A-A Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE6510179A-A DatasheetNE6510179A-A Datasheet (P4-P6)NE6510179A-A Datasheet (P7-P9)NE6510179A-A Datasheet (P10)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
CEL
Categoria di prodotto:
Transistor RF JFET
RoHS:
Y
Tipo di transistor:
HFET
Tecnologia:
GaAs
Guadagno:
10 dB
Polarità del transistor:
Canale N
Vds - Tensione di rottura Drain-Source:
8 V
Vgs - Tensione di rottura gate-source:
- 4 V
Id - Corrente di scarico continua:
2.8 A
Potenza di uscita:
35 dBm
Temperatura massima di esercizio:
+ 150 C
Pd - Dissipazione di potenza:
15 W
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
79A
Confezione:
Massa
Frequenza operativa:
1.9 GHz
Prodotto:
RF JFET
Tipo:
GaAs HFET
Marca:
CEL
P1dB - Punto di compressione:
35 dBm
Tipologia di prodotto:
Transistor RF JFET
sottocategoria:
transistor
Tags
NE6510, NE651, NE65, NE6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Discrete Power Devices L&S; Band GaAs HJFET
***i-Key
HJ-FET GAAS 1.9GHZ 3W 79A
Parte # Mfg. Descrizione Azione Prezzo
NE6510179A-A
DISTI # NE6510179A-A-ND		California Eastern Laboratories (CEL)FET RF 8V 1.9GHZ 79A
RoHS: Compliant
Min Qty: 20
Container: Bulk		Limited Supply - Call
    NE6510179A
    DISTI # 551-NE6510179A    		NEC Electronics GroupRF JFET Transistors L&S Band GaAs HJFET
    RoHS: Not compliant    		0
      NE6510179A-A
      DISTI # 551-NE6510179A-A      		California Eastern Laboratories (CEL)RF JFET Transistors L&S Band GaAs HJFET
      RoHS: Compliant      		0
        Immagine Parte # Descrizione
        NE6510179A-EVPW19

        Mfr.#: NE6510179A-EVPW19

        OMO.#: OMO-NE6510179A-EVPW19

        		 RF Development Tools For NE6510179A-A Power at 1.9 GHz
        NE6510179A-EVPW26

        Mfr.#: NE6510179A-EVPW26

        OMO.#: OMO-NE6510179A-EVPW26

        		 RF Development Tools For NE6510179A-A Power at 2.6 GHz
        NE6510179A-A

        Mfr.#: NE6510179A-A

        OMO.#: OMO-NE6510179A-A

        		 RF JFET Transistors L&S Band GaAs HJFET
        NE6510179A

        Mfr.#: NE6510179A

        OMO.#: OMO-NE6510179A-1152

        		 RF JFET Transistors L&S Band GaAs HJFET
        NE6510179A , EM6323LXSP5

        Mfr.#: NE6510179A , EM6323LXSP5

        OMO.#: OMO-NE6510179A-EM6323LXSP5-1190

        		 Nuovo e originale
        NE6510179A-A

        Mfr.#: NE6510179A-A

        OMO.#: OMO-NE6510179A-A-CEL

        		 FET RF 8V 1.9GHZ 79A
        NE6510179A-T

        Mfr.#: NE6510179A-T

        OMO.#: OMO-NE6510179A-T-1190

        		 Nuovo e originale
        NE6510179A-T1

        Mfr.#: NE6510179A-T1

        OMO.#: OMO-NE6510179A-T1-1190

        		 Nuovo e originale
        NE6510179A-T1-AK

        Mfr.#: NE6510179A-T1-AK

        OMO.#: OMO-NE6510179A-T1-AK-1190

        		 Nuovo e originale
        Disponibilità
        Azione:
        Available
        Su ordine:
        2500
        Inserisci la quantità:
        Il prezzo attuale di NE6510179A-A è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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