IPB019N06L3 G

Mfr. #:: IPB019N06L3 G
Produttore:: Infineon Technologies
Descrizione:: Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: IPB019N06L3 G Scheda dati
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Maggiori informazioni:: IPB019N06L3 G maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: Transistor - FET, MOSFET - Singoli

Serie: OptiMOS 3

Confezione: Bobina

Alias parziali: IPB019N06L3GATMA1 IPB019N06L3GXT SP000453020

Unità di peso: 0.068654 oz

Nome depositato: OptiMOS

Pacchetto-Custodia: TO-263-3

Tecnologia: si

Numero di canali: 1 Channel

Configurazione: Separare

Tipo a transistor: 1 N-Channel

Pd-Power-Dissipazione: 250 W

Massima temperatura di esercizio: + 175 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 38 ns

Ora di alzarsi: 79 ns

Vgs-Gate-Source-Voltage: 20 V

Id-Continuo-Scarico-Corrente: 120 A

Vds-Drain-Source-Breakdown-Voltage: 60 V

Rds-On-Drain-Source-Resistenza: 1.9 mOhms

Polarità del transistor: Canale N

Tempo di ritardo allo spegnimento tipico: 131 ns

Tempo di ritardo all'accensione tipico: 35 ns

Modalità canale: Aumento

Tags: IPB019N06L3G, IPB019N06L3, IPB019N06L, IPB019N06, IPB019, IPB01, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
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Step2:
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Step3:
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IPB019N06L3 G Maggiori informazioni

N-Channel OptiMOS™ Power MOSFETs: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.

N-Channel OptiMOS™ Power MOSFETs - EXPANSION: Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
IPB019N06L3GATMA1 DISTI # V72:2272_06377428	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	977	500:$2.5240 250:$2.8110 100:$2.9590 25:$3.0720 10:$3.4130 1:$4.4143
IPB019N06L3GATMA1 DISTI # V36:1790_06377428	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	0	1000000:$1.8500 500000:$1.8520 100000:$1.9880 10000:$2.2080 1000:$2.2440
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1792In Stock	500:$2.7405 100:$3.2193 10:$3.9290 1:$4.3700
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	1792In Stock	500:$2.7405 100:$3.2193 10:$3.9290 1:$4.3700
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 60V 120A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	1000In Stock	2000:$2.1318 1000:$2.2440
IPB019N06L3GATMA1 DISTI # 33709822	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	977	3:$4.4143
IPB019N06L3 G DISTI # 31073238	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 RoHS: Compliant	78	5:$5.2375
IPB019N06L3GXT DISTI # IPB019N06L3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB019N06L3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 0	6000:$1.8900 10000:$1.8900 4000:$1.9900 1000:$2.0900 2000:$2.0900
IPB019N06L3GATMA1 DISTI # SP000453020	Infineon Technologies AG	Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP000453020) RoHS: Compliant Min Qty: 1000 Container: Tape and Reel	Europe - 0	10000:€1.5900 6000:€1.6900 2000:€1.8900 4000:€1.8900 1000:€1.9900
IPB019N06L3GATMA1 DISTI # 47Y8046	Infineon Technologies AG	MOSFET Transistor, N Channel, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V RoHS Compliant: Yes	0
IPB019N06L3 G DISTI # 726-IPB019N06L3G	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1050	1:$4.0400 10:$3.4300 100:$2.9700 250:$2.8200 500:$2.5300 1000:$2.1300 2000:$2.0300
IPB019N06L3GATMA1 DISTI # 726-IPB019N06L3GATMA	Infineon Technologies AG	MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS 3 RoHS: Compliant	1639	1:$4.0400 10:$3.4300 100:$2.9700 250:$2.8200 500:$2.5300 1000:$2.1300 2000:$2.0300
IPB019N06L3GATMA1 DISTI # 8275293P	Infineon Technologies AG	MOSFET N-CH 120A 60V OPTIMOS3 TO263, RL	1440	100:£2.0380 50:£2.3480
IPB019N06L3GATMA1 DISTI # IPB019N06L3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,60V,120A,250W,PG-TO263-3	683	100:$2.4550 10:$2.8267 3:$3.1983 1:$3.5474
IPB019N06L3GATMA1 DISTI # 2443430	Infineon Technologies AG	MOSFET, N CH, 60V, 120A, TO-263-3 RoHS: Compliant	0	1000:$3.2100 500:$3.8100 250:$4.2500 100:$4.4800 10:$5.1700 1:$6.0900

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: IPB019N08N3 G OMO.#: OMO-IPB019N08N3-G	MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB019N08N5ATMA1 OMO.#: OMO-IPB019N08N5ATMA1-1190	DIFFERENTIATED MOSFETS
	Mfr.#: IPB019N06 OMO.#: OMO-IPB019N06-1190	Nuovo e originale
	Mfr.#: IPB019N06L3 OMO.#: OMO-IPB019N06L3-1190	Nuovo e originale
	Mfr.#: IPB019N06L3G OMO.#: OMO-IPB019N06L3G-1190	Nuovo e originale
	Mfr.#: IPB019N06L3GATMA1 OMO.#: OMO-IPB019N06L3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 120A TO263-3
	Mfr.#: IPB019N08N OMO.#: OMO-IPB019N08N-1190	Nuovo e originale
	Mfr.#: IPB019N08N3 G OMO.#: OMO-IPB019N08N3-G-1190	MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
	Mfr.#: IPB019N08N3GATMA1 OMO.#: OMO-IPB019N08N3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 80V 180A TO263-7
	Mfr.#: IPB019N08N3GS OMO.#: OMO-IPB019N08N3GS-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 2500
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Il prezzo attuale di IPB019N06L3 G è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~3,04 USD~~; ~~3,04 USD~~

10: ~~2,89 USD~~; ~~28,93 USD~~

100: ~~2,74 USD~~; ~~274,05 USD~~

500: ~~2,59 USD~~; ~~1 294,15 USD~~

1000: ~~2,44 USD~~; ~~2 436,00 USD~~

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IPB019N06L3 G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes