SI3585CDV-T1-GE3

Mfr. #:: SI3585CDV-T1-GE3
Produttore:: Vishay
Descrizione:: Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: SI3585CDV-T1-GE3 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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Maggiori informazioni:: SI3585CDV-T1-GE3 maggiori informazioni

Attributo del prodotto
Valore attributo

Produttore: Vishay Siliconix

categoria di prodotto: FET - Array

Serie: TrinceaFETR

Confezione: Imballaggio alternativo Digi-ReelR

Alias parziali: SI3585CDV-GE3

Unità di peso: 0.000705 oz

Stile di montaggio: SMD/SMT

Pacchetto-Custodia: SOT-23-6 Thin, TSOT-23-6

Tecnologia: si

Temperatura di esercizio: -55°C ~ 150°C (TJ)

Tipo di montaggio: Montaggio superficiale

Numero di canali: 2 Channel

Pacchetto-dispositivo-fornitore: 6-TSOP

Configurazione: 1 N-Channel 1 P-Channel

Tipo FET: Canale N e P

Potenza-Max: 1.4W, 1.3W

Tipo a transistor: 1 N-Channel 1 P-Channel

Drain-to-Source-Voltage-Vdss: 20V

Ingresso-Capacità-Ciss-Vds: 150pF @ 10V

Funzione FET: Porta livello logico

Corrente-Continuo-Scarico-Id-25°C: 3.9A, 2.1A

Rds-On-Max-Id-Vgs: 58 mOhm @ 2.5A, 4.5V

Vgs-th-Max-Id: 1.5V @ 250μA

Gate-Carica-Qg-Vgs: 4.8nC @ 10V

Pd-Power-Dissipazione: 1.4 W 1.3 W

Massima temperatura di esercizio: + 150 C

Temperatura di esercizio minima: - 55 C

Tempo di caduta: 8 ns 7 ns

Ora di alzarsi: 20 ns 10 ns

Vgs-Gate-Source-Voltage: 12 V

Id-Continuo-Scarico-Corrente: 3.9 A - 2.1 A

Vds-Drain-Source-Breakdown-Voltage: 20 V

Vgs-th-Gate-Sorgente-Soglia-Tensione: 1.5 V - 1.5 V

Rds-On-Drain-Source-Resistenza: 58 mOhms 195 mOhms

Polarità del transistor: Canale N Canale P

Tempo di ritardo allo spegnimento tipico: 11 ns 13 ns

Tempo di ritardo all'accensione tipico: 5 ns 3 ns

Qg-Gate-Carica: 3.2 nC 6 nC

Transconduttanza diretta-Min: 12 S 1 S

Tags: SI3585CDV-T, SI3585C, SI3585, SI358, SI35, SI3

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI3585CDV-T1-GE3 Maggiori informazioni

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Si3 MOSFETs: Vishay/Siliconix Si3 MOSFETs are a TrenchFET® power MOSFETs operate in an enhancement mode. These Si3 MOSFETs are available in N-channel, P-channel, and N- and P-channel with ultra-low RDS(ON) for high-efficiency. These MOSFETs are also available in different VGS and VDS ranges. The Si3 MOSFETs incorporate Si technology and operate at a temperature ranging from -55ºC to 150ºC. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
SI3585CDV-T1-GE3 DISTI # V72:2272_09216703	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R RoHS: Compliant	3000	3000:$0.1576 1000:$0.1751 500:$0.2161 250:$0.2476 100:$0.2503 25:$0.3124 10:$0.3163 1:$0.3860
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	12000In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	12000In Stock	1000:$0.2311 500:$0.2991 100:$0.4079 10:$0.5440 1:$0.6500
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 20V 3.9A 6TSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	9000In Stock	3000:$0.2046
SI3585CDV-T1-GE3 DISTI # 31154779	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R RoHS: Compliant	3000	3000:$0.1576 1000:$0.1751 500:$0.2161 250:$0.2476 100:$0.2503 48:$0.3124
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R (Alt: SI3585CDV-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.3089 6000:€0.2109 12000:€0.1809 18000:€0.1669 30000:€0.1559
SI3585CDV-T1-GE3 DISTI # SI3585CDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 20V/20V 3.5A/1.9A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3585CDV-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.1609 6000:$0.1559 12000:$0.1499 18000:$0.1459 30000:$0.1419
SI3585CDV-T1-GE3 DISTI # 70AC6501	Vishay Intertechnologies		0	1:$0.6500 25:$0.5440 50:$0.4760 100:$0.4070 250:$0.3530 500:$0.2990 1000:$0.2310
SI3585CDV-T1-GE3 DISTI # 99W9612	Vishay Intertechnologies	Dual MOSFET, N and P Channel, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V	0	1:$0.1760 3000:$0.1740 6000:$0.1660
SI3585CDV-T1-GE3 DISTI # 78-SI3585CDV-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR RoHS: Compliant	378	1:$0.5700 10:$0.4340 100:$0.3220 500:$0.2650 1000:$0.2050 3000:$0.2000
SI3585CDV-T1-GE3 DISTI # 2454805RL	Vishay Intertechnologies	MOSFET, N/P-CH, 20V, 3.9A, TSOP-6 RoHS: Compliant	0	1:$0.9020 10:$0.6870 100:$0.5100 500:$0.4190 1000:$0.3250 3000:$0.2940 6000:$0.2810
SI3585CDV-T1-GE3 DISTI # 2454805	Vishay Intertechnologies	MOSFET, N/P-CH, 20V, 3.9A, TSOP-6 RoHS: Compliant	0	1:$0.9020 10:$0.6870 100:$0.5100 500:$0.4190 1000:$0.3250 3000:$0.2940 6000:$0.2810
SI3585CDV-T1-GE3 DISTI # 2454805	Vishay Intertechnologies	MOSFET, N/P-CH, 20V, 3.9A, TSOP-6 RoHS: Compliant	0	5:£0.4650 25:£0.4380 100:£0.3050
SI3585CDV-T1-GE3	Vishay Intertechnologies	MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR RoHS: Compliant	Americas -	3000:$0.1570 6000:$0.1480 12000:$0.1440 24000:$0.1420

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: SI3585CDV-T1-GE3 OMO.#: OMO-SI3585CDV-T1-GE3	MOSFET -20V Vds 12V Vgs TSOP-6 N&P PAIR
	Mfr.#: SI3585CDV OMO.#: OMO-SI3585CDV-1190	Nuovo e originale
	Mfr.#: SI3585CDV-T1-E3 OMO.#: OMO-SI3585CDV-T1-E3-1190	Nuovo e originale
	Mfr.#: SI3585CDV-T1-GE3-CUT TAPE OMO.#: OMO-SI3585CDV-T1-GE3-CUT-TAPE-1190	Nuovo e originale
	Mfr.#: SI3585CDV-T1-GE3 OMO.#: OMO-SI3585CDV-T1-GE3-VISHAY	Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di SI3585CDV-T1-GE3 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~0,19 USD~~; ~~0,19 USD~~

10: ~~0,18 USD~~; ~~1,80 USD~~

100: ~~0,17 USD~~; ~~17,01 USD~~

500: ~~0,16 USD~~; ~~80,35 USD~~

1000: ~~0,15 USD~~; ~~151,20 USD~~

Iniziare con

SI3585CDV-T 3
SI3585C 4
SI3585 8
SI358 17
SI35 45
SI3 1735

SI3585CDV-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes