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PSMN1R5-30BLEJ

PSMN1R5-30BLEJ
Mfr. #:
PSMN1R5-30BLEJ
Produttore:
Nexperia
Descrizione:
MOSFET N-CH 30V 120A D2PAK
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
PSMN1R5-30BLEJ Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
PSMN1R5-30BLEJ maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
Semiconduttori NXP
categoria di prodotto
FET - Single
Serie
-
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.139332 oz
Stile di montaggio
SMD/SMT
Pacchetto-Custodia
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Tecnologia
si
Temperatura di esercizio
-55°C ~ 175°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
D2PAK
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
401W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
30V
Ingresso-Capacità-Ciss-Vds
14934pF @ 15V
Funzione FET
Porta livello logico
Corrente-Continuo-Scarico-Id-25°C
120A (Tc)
Rds-On-Max-Id-Vgs
1.5 mOhm @ 25A, 10V
Vgs-th-Max-Id
2.15V @ 1mA
Gate-Carica-Qg-Vgs
228nC @ 10V
Pd-Power-Dissipazione
401 W
Massima temperatura di esercizio
+ 175 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
99.2 ns
Ora di alzarsi
156.1 ns
Vgs-Gate-Source-Voltage
20 V
Id-Continuo-Scarico-Corrente
120 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.7 V
Rds-On-Drain-Source-Resistenza
1.3 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
191.8 ns
Tempo di ritardo all'accensione tipico
100.6 ns
Qg-Gate-Carica
228 nC
Modalità canale
Aumento
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***peria
PSMN1R5-30BLE - N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
***ure Electronics
Low Voltage MOSFET - 30V 120A D2PAK - SOT404 package
***p One Stop Japan
Trans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R
***i-Key
MOSFET N-CH 30V D2PAK
***ark
Transistor Polarity:n Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(On):1.5Mohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; No. Of Pins:3Pins
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:401W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C
***nell
MOSFET, CANALE N, 30V, 120A, D2PAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:120A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0013ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.7V; Dissipazione di Potenza Pd:401W; Modello Case Transistor:TO-263; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Intervallo Temperatura di Esercizio:Da -55°C a +175°C; Temperatura di Esercizio Min:-55°C
PSMN N-Channel MOSFETs
Nexperia PSMN N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMN N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads, and ultra low RDS(on) and low parasitic inductance. They are also optimized for 4.5V gate drive utilizing NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.
Parte # Mfg. Descrizione Azione Prezzo
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # V72:2272_06540853    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-1-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape (CT)      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-6-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		332In Stock
      • 100:$2.0996
      • 10:$2.6120
      • 1:$2.9100
      PSMN1R5-30BLEJ
      DISTI # 1727-1101-2-ND      		NexperiaMOSFET N-CH 30V 120A D2PAK
      RoHS: Compliant
      Min Qty: 800
      Container: Tape & Reel (TR)      		On Order
      • 1600:$1.4430
      • 800:$1.7110
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3854
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        Immagine Parte # Descrizione
        PSMN1R5-40ES,127

        Mfr.#: PSMN1R5-40ES,127

        OMO.#: OMO-PSMN1R5-40ES-127

        		 MOSFET N-Ch 40V 1.6 mOhms
        PSMN1R5-30YL,115

        Mfr.#: PSMN1R5-30YL,115

        OMO.#: OMO-PSMN1R5-30YL-115-NEXPERIA

        		 MOSFET N-CH 30V LFPAK
        PSMN1R5-25YL

        Mfr.#: PSMN1R5-25YL

        OMO.#: OMO-PSMN1R5-25YL-1190

        		 Nuovo e originale
        PSMN1R5-30BLE118

        Mfr.#: PSMN1R5-30BLE118

        OMO.#: OMO-PSMN1R5-30BLE118-1190

        		 Now Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        PSMN1R5-30YL115

        Mfr.#: PSMN1R5-30YL115

        OMO.#: OMO-PSMN1R5-30YL115-1190

        		 Now Nexperia PSMN1R5-30YL - Power Field-Effect Transistor, 100A I(D), 35V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LFPAK
        PSMN1R5-30YLC,115

        Mfr.#: PSMN1R5-30YLC,115

        OMO.#: OMO-PSMN1R5-30YLC-115-NEXPERIA

        		 MOSFET N-CH 30V 100A LFPAK
        PSMN1R5-30YLC.115

        Mfr.#: PSMN1R5-30YLC.115

        OMO.#: OMO-PSMN1R5-30YLC-115-1190

        		 Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R - Tape and Reel (Alt: PSMN1R5-30YLC,115)
        PSMN1R5-30YLC115

        Mfr.#: PSMN1R5-30YLC115

        OMO.#: OMO-PSMN1R5-30YLC115-1190

        		 - Bulk (Alt: PSMN1R5-30YLC115)
        PSMN1R5-25YL,115

        Mfr.#: PSMN1R5-25YL,115

        OMO.#: OMO-PSMN1R5-25YL-115-NEXPERIA

        		 IGBT Transistors MOSFET N-CH TRENCHMOS Logic level FET
        PSMN1R5-40PS,127

        Mfr.#: PSMN1R5-40PS,127

        OMO.#: OMO-PSMN1R5-40PS-127-NEXPERIA

        		 MOSFET N-CH 40V 120A TO220AB
        Disponibilità
        Azione:
        Available
        Su ordine:
        5500
        Inserisci la quantità:
        Il prezzo attuale di PSMN1R5-30BLEJ è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
        Prezzo di riferimento (USD)
        Quantità
        Prezzo unitario
        est. Prezzo
        1
        1,86 USD
        1,86 USD
        10
        1,77 USD
        17,70 USD
        100
        1,68 USD
        167,64 USD
        500
        1,58 USD
        791,65 USD
        1000
        1,49 USD
        1 490,20 USD
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