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HGTG11N120CND

HGTG11N120CND
Mfr. #:
HGTG11N120CND
Produttore:
ON Semiconductor / Fairchild
Descrizione:
IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
HGTG11N120CND Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
ON Semiconductor
Categoria di prodotto:
Transistor IGBT
RoHS:
E
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1200 V
Tensione di saturazione collettore-emettitore:
2.1 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
43 A
Pd - Dissipazione di potenza:
298 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 150 C
Serie:
HGTG11N120CND
Confezione:
Tubo
Corrente continua del collettore Ic Max:
43 A
Altezza:
20.82 mm
Lunghezza:
15.87 mm
Larghezza:
4.82 mm
Marca:
ON Semiconductor / Fairchild
Corrente continua del collettore:
55 A
Corrente di dispersione gate-emettitore:
+/- 250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
450
sottocategoria:
IGBT
Parte # Alias:
HGTG11N120CND_NL
Unità di peso:
0.225401 oz
Tags
HGTG11N120CND, HGTG11N120C, HGTG11N12, HGTG11N1, HGTG11, HGTG1, HGTG, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***inecomponents.com
43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
***p One Stop Japan
Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
***ure Electronics
HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
***et
PWR IGBT 35A 1200V NPT N-CHANNEL W/DIODE TO-247
***i-Key
IGBT NPT N-CH 1200V 43A TO-247
*** Source Electronics
IGBT 1200V 43A 298W TO247
***ser
IGBTs 35A, 1200V, N-Ch
***Semiconductor
1200V, NPT IGBT
***an P&S
1200V NPT IGBT
***nell
IGBT, N; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:43A; Voltage, Vce Sat Max:2.4V; Power Dissipation:298W; Case Style:TO-247; Termination Type:SMD
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:NPN; Continuous Collector Current, Ic:43A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:298W; Package/Case:TO-247; C-E Breakdown Voltage:1200V ;RoHS Compliant: Yes
***rchild Semiconductor
HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
***ment14 APAC
IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV
Parte # Mfg. Descrizione Azione Prezzo
HGTG11N120CND
DISTI # C1S226600594853		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail
RoHS: Compliant		3280
  • 1020:$1.6200
  • 510:$1.7400
  • 120:$2.2800
  • 60:$2.4800
  • 30:$3.0200
HGTG11N120CND
DISTI # HGTG11N120CND-ND		ON SemiconductorIGBT 1200V 43A 298W TO247
RoHS: Compliant
Min Qty: 1
Container: Tube		422In Stock
  • 1350:$1.8282
  • 900:$2.1678
  • 450:$2.4159
  • 10:$3.1080
  • 1:$3.4600
HGTG11N120CND
DISTI # HGTG11N120CND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND)
RoHS: Compliant
Min Qty: 1		Europe - 150
  • 1:€1.7900
  • 10:€1.6900
  • 25:€1.4900
  • 50:€1.4900
  • 100:€1.3900
  • 500:€1.2900
  • 1000:€1.2900
HGTG11N120CND
DISTI # HGTG11N120CND		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 450:$1.3900
  • 452:$1.3900
  • 902:$1.3900
  • 2250:$1.3900
  • 4500:$1.3900
HGTG11N120CND
DISTI # 58K8900		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900)
RoHS: Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$3.3000
  • 10:$2.8000
  • 25:$2.6800
  • 50:$2.5500
  • 100:$2.4300
  • 250:$2.3100
  • 500:$2.0700
HGTG11N120CND
DISTI # 58K8900		ON SemiconductorSINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes442
  • 1:$3.4400
  • 10:$2.9400
  • 25:$2.8200
  • 50:$2.6900
  • 100:$2.5700
  • 250:$2.4500
  • 500:$2.2100
HGTG11N120CNDFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247
RoHS: Compliant		2679
  • 1000:$1.8300
  • 500:$1.9300
  • 100:$2.0000
  • 25:$2.0900
  • 1:$2.2500
HGTG11N120CND
DISTI # 512-HGTG11N120CND		ON SemiconductorIGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde
RoHS: Compliant		191
  • 1:$3.3000
  • 10:$2.8000
  • 100:$2.4300
  • 250:$2.3100
HGTG11N120CNDON SemiconductorHGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247
RoHS: Compliant		1800Tube
  • 5:$2.1600
  • 50:$1.9700
  • 300:$1.6400
HGTG11N120CND
DISTI # HGTG11N120CND		ON SemiconductorTransistor: IGBT,1.2kV,22A,298W,TO24739
  • 1:$4.3900
  • 3:$3.7700
  • 10:$3.0400
  • 30:$2.7300
HGTG11N120CNDFairchild Semiconductor Corporation 
RoHS: Compliant		Europe - 200
    HGTG11N120CNDFairchild Semiconductor CorporationINSTOCK1180
      HGTG11N120CND
      DISTI # 1611490      		ON SemiconductorIGBT, N
      RoHS: Compliant      		849
      • 1:$5.2200
      • 10:$4.4400
      • 100:$3.8500
      HGTG11N120CND
      DISTI # 1611490      		ON SemiconductorIGBT, N
      RoHS: Compliant      		872
      • 1:£2.8700
      • 10:£2.1600
      • 100:£1.8800
      • 250:£1.7700
      • 500:£1.6000
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      Disponibilità
      Azione:
      408
      Su ordine:
      2391
      Inserisci la quantità:
      Il prezzo attuale di HGTG11N120CND è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
      Prezzo di riferimento (USD)
      Quantità
      Prezzo unitario
      est. Prezzo
      1
      3,73 USD
      3,73 USD
      10
      3,17 USD
      31,70 USD
      100
      2,75 USD
      275,00 USD
      250
      2,61 USD
      652,50 USD
      500
      2,34 USD
      1 170,00 USD
      1000
      1,97 USD
      1 970,00 USD
      2500
      1,87 USD
      4 675,00 USD
      5000
      1,80 USD
      9 000,00 USD
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