STGWT40H65DFB

STGWT40H65DFB
Mfr. #:
STGWT40H65DFB
Produttore:
STMicroelectronics
Descrizione:
IGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
STGWT40H65DFB Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
STGWT40H65DFB maggiori informazioni STGWT40H65DFB Product Details
Attributo del prodotto
Valore attributo
Produttore:
STMicroelectronics
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-3P
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
650 V
Tensione di saturazione collettore-emettitore:
1.6 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
283 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
STGWT40H65DFB
Confezione:
Tubo
Corrente continua del collettore Ic Max:
40 A
Marca:
STMicroelectronics
Corrente di dispersione gate-emettitore:
250 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
300
sottocategoria:
IGBT
Unità di peso:
0.238311 oz
Tags
STGWT40H65, STGWT40H6, STGWT40H, STGWT4, STGWT, STGW, STG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
STMicroelectronics STGWT40H65DFB IGBT, 80 A 650 V, 3-Pin TO-3P
***p One Stop Global
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-3P Tube
***ure Electronics
STGWT40 Series 650 V 80 A Through Hole Silicon IGBT - TO-3P
***p One Stop Japan
Trans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
***et Europe
Trans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube
***ied Electronics & Automation
IGBT Trench HB Series 650V 40A TO-3P
***i-Key
IGBT 650V 80A 283W TO3P-3L
***ark
Ptd High Voltage
IGBT HB/HB2 Series
STMicroelectronics IGBT HB/HB2 Series IGBTs combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary trench gate field-stop (TGFS) structure.
Parte # Mfg. Descrizione Azione Prezzo
STGWT40H65DFB
DISTI # V36:1790_06560827
STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin(3+Tab) TO-3P Tube
RoHS: Compliant
0
    STGWT40H65DFB
    DISTI # 497-14229-5-ND
    STMicroelectronicsIGBT 650V 80A 283W TO3P-3L
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    396In Stock
    • 2520:$2.1420
    • 510:$2.6668
    • 120:$3.1327
    • 30:$3.6147
    • 10:$3.8230
    • 1:$4.2600
    STGWT40H65DFB
    DISTI # STGWT40H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 30
    Container: Tube
    Europe - 0
    • 300:€1.7900
    • 180:€1.8900
    • 120:€1.9900
    • 60:€2.0900
    • 30:€2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube - Rail/Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Americas - 0
    • 3000:$1.8900
    • 6000:$1.8900
    • 1800:$1.9900
    • 1200:$2.0900
    • 600:$2.1900
    STGWT40H65DFB
    DISTI # STGWT40H65DFB
    STMicroelectronicsTrans IGBT Chip N-CH 650V 80A 3-Pin TO-3P Tube (Alt: STGWT40H65DFB)
    RoHS: Compliant
    Min Qty: 600
    Container: Tube
    Asia - 0
    • 30000:$1.4868
    • 15000:$1.5270
    • 6000:$1.5694
    • 3000:$1.6377
    • 1800:$1.7121
    • 1200:$1.7937
    • 600:$1.8833
    STGWT40H65DFB
    DISTI # 40X8766
    STMicroelectronicsPTD HIGH VOLTAGE0
    • 500:$1.9900
    • 250:$2.0500
    • 100:$2.4500
    • 50:$2.8300
    • 25:$3.0200
    • 10:$3.4500
    • 1:$3.9800
    STGWT40H65DFB
    DISTI # 511-STGWT40H65DFB
    STMicroelectronicsIGBT Transistors 650V 40A HSpd trench gate field-stop IGBT
    RoHS: Compliant
    311
    • 1:$4.0500
    • 10:$3.4400
    • 100:$2.9800
    • 250:$2.8300
    • 500:$2.5400
    • 1000:$2.1400
    • 2500:$2.0300
    STGWT40H65DFB
    DISTI # 8294506P
    STMicroelectronicsIGBT TRENCH HB SERIES 650V 40A TO-3P, TU74
    • 10:£2.5000
    • 5:£2.7100
    STGWT40H65DFBSTMicroelectronicsInsulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel
    RoHS: Compliant
    Europe - 720
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      309
      Su ordine:
      2292
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      Prezzo di riferimento (USD)
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      4,05 USD
      4,05 USD
      10
      3,44 USD
      34,40 USD
      100
      2,98 USD
      298,00 USD
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      2,83 USD
      707,50 USD
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      2,54 USD
      1 270,00 USD
      1000
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      2 140,00 USD
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      5000
      1,95 USD
      9 750,00 USD
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