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IGW30N100TFKSA1

IGW30N100TFKSA1
Mfr. #:
IGW30N100TFKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IGW30N100TFKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
1000 V
Tensione di saturazione collettore-emettitore:
1.8 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
60 A
Pd - Dissipazione di potenza:
412 W
Temperatura di esercizio minima:
- 55 C
Temperatura massima di esercizio:
+ 175 C
Serie:
TRENCHSTOP IGBT
Confezione:
Tubo
Corrente continua del collettore Ic Max:
30 A
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
600 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IGW30N100T IGW3N1TXK SP000380845
Unità di peso:
0.014110 oz
Tags
IGW30N1, IGW30N, IGW3, IGW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransIGBTChipNCH1000V60A412000mWAutomotive3Pin3TabTO247Tube
***ark
TransistorIgbt1Kv60ATo247;DcCollectorCurrent60A;CollectorEmitterSaturationVoltageVceOn155V;PowerDissipationPd412W;CollectorEmitterVoltageVBrCeo1Kv;TransistorCaseStyleto247;NoOfPins3Pins;RohsCompliantYes
***ineon
InfineonsTRENCHSTOPIGBTtechnologyleadstosignificantimprovementofstaticaswellasdynamicperformanceofthedeviceduetocombinationoftrenchtopcellandfiledstopconceptCombinationofIGBTwithsoftrecoveryEmitterControlledDiodefurtherminimizestheturnonlossesThehighestefficiencyisreachedduetothebestcompromisebetweenswitchingandconductionlossesSummaryofFeaturesLowestVcesatdropforlowerconductionlosses;Lowswitchinglosses;EasyparallelswitchingcapabilityduetopositivetemperaturecoefficientinVcesat;VerysoftfastrecoveryantiparallelEmitterControlledDiode;Highruggednesstemperaturestablebehavior;LowEMIemissions;Lowgatecharge;VerytightparameterdistributionBenefitsHighestefficiencylowconductionandswitchinglosses;Comprehensiveportfolioin600Vand1200Vforflexibilityofdesign;HighdevicereliabilityTargetApplicationsUPS;SolarInverters;MajorHomeAppliances;Welding;Airconditioning;IndustrialDrives;Otherhardswitchingapplications
Parte # Mfg. Descrizione Azione Prezzo
IGW30N100TFKSA1
DISTI # V99:2348_06378671		Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		244
  • 100:$3.9750
  • 10:$4.6210
  • 1:$6.0313
IGW30N100TFKSA1
DISTI # IGW30N100TFKSA1-ND		Infineon Technologies AGIGBT 1000V 60A 412W TO247-3
RoHS: Compliant
Min Qty: 240
Container: Tube		Limited Supply - Call
    IGW30N100TFKSA1
    DISTI # 26197476    		Infineon Technologies AGTrans IGBT Chip N-CH 1000V 60A 412000mW 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant    		244
    • 3:$6.0313
    IGW30N100TFKSA1
    DISTI # 13AC9000    		Infineon Technologies AGTRANSISTOR, IGBT, 1KV, 60A, TO-247,DC Collector Current:60A,Collector Emitter Saturation Voltage Vce(on):1.55V,Power Dissipation Pd:412W,Collector Emitter Voltage V(br)ceo:1kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes0
      IGW30N100T
      DISTI # 726-IGW30N100T      		Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant      		153
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1
      DISTI # 726-IGW30N100TFKSA1      		Infineon Technologies AGIGBT Transistors LoLoss IGBT TrnchStp Fieldstop tech
      RoHS: Compliant      		118
      • 1:$5.5100
      • 10:$4.6800
      • 100:$4.0600
      • 250:$3.8500
      • 500:$3.4600
      IGW30N100TFKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 60A I(C), 1000V V(BR)CES, N-Channel, TO-247AD
      RoHS: Compliant      		69
      • 1000:$2.3700
      • 500:$2.4900
      • 100:$2.6000
      • 25:$2.7100
      • 1:$2.9200
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      Disponibilità
      Azione:
      115
      Su ordine:
      2098
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