BSG0813NDIATMA1

Mfr. #:: BSG0813NDIATMA1
Produttore:: Infineon Technologies
Descrizione:: MOSFET 2N-CH 25V 19A/33A 8TISON
Ciclo vitale:: Nuovo da questo produttore.
Scheda dati:: BSG0813NDIATMA1 Scheda dati
Consegna:: DHL FedEx Ups TNT EMS
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ECAD Model:

Attributo del prodotto
Valore attributo

Produttore: Tecnologie Infineon

categoria di prodotto: FET - Array

Serie: *

Confezione: Nastro e bobina (TR)

Alias parziali: BSG0813NDI SP001241676

Pacchetto-Custodia: 8-PowerTDFN

Tecnologia: si

Temperatura di esercizio: -55°C ~ 155°C (TJ)

Tipo di montaggio: Montaggio superficiale

Pacchetto-dispositivo-fornitore: PG-TISON-8

Tipo FET: 2 N-Channel (Dual) Asymmetrical

Potenza-Max: 2.5W

Drain-to-Source-Voltage-Vdss: 25V

Ingresso-Capacità-Ciss-Vds: 1100pF @ 12V

Funzione FET: Logic Level Gate, 4.5V Drive

Corrente-Continuo-Scarico-Id-25°C: 19A, 33A

Rds-On-Max-Id-Vgs: 3 mOhm @ 20A, 10V

Vgs-th-Max-Id: 2V @ 250μA

Gate-Carica-Qg-Vgs: 8.4nC @ 4.5V

Tags: BSG0813NDIA, BSG0813NDI, BSG0813, BSG08, BSG0, BSG

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSG0813NDIATMA1 Descrizione

***ineon SCT: OptiMOS™ 5 Power Block is a leadless SMD package in a 5, PG-TISON-8, RoHS

***et Europe: Transistor MOSFET Array Dual N-CH 25V 50A 8-Pin TISON T/R

***ical: Trans MOSFET N-CH 25V 31A/50A T/R

***ure Electronics: ASP: 25V 50A 1.2mOhm TISON-8-4

***i-Key: MOSFET 2N-CH 25V 19A/33A TISON8

***ineon: OptiMOS 5 Power Block is a leadless SMD package in a 5.0x6.0mm package outline, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the OptiMOS 5 Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized. | Summary of Features: 50A max average load current; Source-down low side MOSFET for better PCB cooling; Internally connected low-side and high side (lowest loop inductance); High side Kelvin connection for more efficient driving | Benefits: Compact and simplified layout for a DC-DC converter; Optimized layout with lowest loop inductivity and best thermal performance | Target Applications: Desktop and server; Single-phase & multiphase POL; CPU/GPU regulation in notebooks & DDR memory; High power density voltage regulator

Market price

Parte #	Mfg.	Descrizione	Azione	Prezzo
BSG0813NDIATMA1 DISTI # 31074350	Infineon Technologies AG	Trans MOSFET N-CH 25V 31A/50A T/R RoHS: Compliant	5000	5000:$1.0382
BSG0813NDIATMA1 DISTI # BSG0813NDIATMA1-ND	Infineon Technologies AG	MOSFET 2N-CH 25V 19A/33A 8TISON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	Temporarily Out of Stock	5000:$1.0193
BSG0813NDIATMA1 DISTI # C1S322000625084	Infineon Technologies AG	MOSFETs	5000	5000:$0.9720
BSG0813NDIATMA1 DISTI # BSG0813NDIATMA1	Infineon Technologies AG	Trans MOSFET N-CH 25V 19A/33A 10-Pin TISON8-4 T/R - Tape and Reel (Alt: BSG0813NDIATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$1.0269 10000:$0.9899 20000:$0.9539 30000:$0.9219 50000:$0.9049
BSG0813NDIATMA1 DISTI # BSG0813NDI	Infineon Technologies AG	Trans MOSFET N-CH 25V 19A/33A 10-Pin TISON8-4 T/R (Alt: BSG0813NDI) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel	Asia - 0
BSG0813NDIATMA1 DISTI # 726-BSG0813NDIATMA1	Infineon Technologies AG	MOSFET LV POWER MOS RoHS: Compliant	0	1:$2.1000 10:$1.7900 100:$1.4300 500:$1.2500 1000:$1.0400 2500:$0.9630 5000:$0.9270

Prodotti correlati

Immagine	Parte #	Descrizione
	Mfr.#: BSG0813NDIATMA1 OMO.#: OMO-BSG0813NDIATMA1	MOSFET LV POWER MOS
	Mfr.#: BSG0813ND OMO.#: OMO-BSG0813ND-1190	Nuovo e originale
	Mfr.#: BSG0813ND1 OMO.#: OMO-BSG0813ND1-1190	Nuovo e originale
	Mfr.#: BSG0813NDATMA1 OMO.#: OMO-BSG0813NDATMA1-1190	Nuovo e originale
	Mfr.#: BSG0813NDI OMO.#: OMO-BSG0813NDI-1190	Nuovo e originale
	Mfr.#: BSG0813NDIATMA1 OMO.#: OMO-BSG0813NDIATMA1-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 25V 19A/33A 8TISON
	Mfr.#: BSG0813NDIATMA1INFINEON- OMO.#: OMO-BSG0813NDIATMA1INFINEON--1190	Nuovo e originale
	Mfr.#: BSG0813NDIATMA1-CUT TAPE OMO.#: OMO-BSG0813NDIATMA1-CUT-TAPE-1190	Nuovo e originale

Disponibilità

Azione:: Available
Su ordine:: 4500
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Il prezzo attuale di BSG0813NDIATMA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]

Prezzo di riferimento (USD)

Quantità
Prezzo unitario
est. Prezzo

1: ~~1,36 USD~~; ~~1,36 USD~~

10: ~~1,29 USD~~; ~~12,90 USD~~

100: ~~1,22 USD~~; ~~122,16 USD~~

500: ~~1,15 USD~~; ~~576,85 USD~~

1000: ~~1,09 USD~~; ~~1 085,90 USD~~

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BSG0813NDIATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes