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A2T09D400-23NR6

A2T09D400-23NR6
Mfr. #:
A2T09D400-23NR6
Produttore:
NXP / Freescale
Descrizione:
RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
A2T09D400-23NR6 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
A2T09D400-23NR6 DatasheetA2T09D400-23NR6 Datasheet (P4-P6)A2T09D400-23NR6 Datasheet (P7-P9)A2T09D400-23NR6 Datasheet (P10-P12)A2T09D400-23NR6 Datasheet (P13-P15)
ECAD Model:
Attributo del prodotto
Valore attributo
Produttore:
NXP
Categoria di prodotto:
Transistor MOSFET RF
Polarità del transistor:
Canale N
Tecnologia:
si
Id - Corrente di scarico continua:
2.7 A
Vds - Tensione di rottura Drain-Source:
- 500 mV, 70 V
Guadagno:
17.9 dB
Potenza di uscita:
93 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 150 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
OM-1230-4L2S-7
Confezione:
Bobina
Frequenza operativa:
716 MHz to 960 MHz
Tipo:
MOSFET di potenza RF
Marca:
NXP / Freescale
Numero di canali:
2 Channel
Tipologia di prodotto:
Transistor MOSFET RF
Quantità confezione di fabbrica:
150
sottocategoria:
MOSFET
Vgs - Tensione Gate-Source:
- 6 V, 10 V
Vgs th - Tensione di soglia gate-source:
1.5 V
Parte # Alias:
935318726528
Unità di peso:
0.186416 oz
Tags
A2T09, A2T0, A2T
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
***W
RF Power Transistor,716 to 960 MHz, 400 W, Typ Gain in dB is 17.9 @ 836 MHz, 28 V, LDMOS, SOT1819
***et Europe
Trans MOSFET N-CH -0.5/70V 6-Pin OM-1230 T/R
***i-Key
AIRFAST RF POWER LDMOS TRANSISTO
***hardson RFPD
RF POWER TRANSISTOR
Parte # Mfg. Descrizione Azione Prezzo
A2T09D400-23NR6
DISTI # A2T09D400-23NR6-ND		NXP SemiconductorsAIRFAST RF POWER LDMOS TRANSISTO
RoHS: Not compliant
Min Qty: 150
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 150:$125.4911
A2T09D400-23NR6
DISTI # A2T09D400-23NR6		Avnet, Inc.Trans MOSFET N-CH -0.5/70V 6-Pin OM-1230 T/R - Tape and Reel (Alt: A2T09D400-23NR6)
RoHS: Compliant
Min Qty: 150
Container: Reel		Americas - 0
  • 150:$137.4900
  • 300:$132.0900
  • 600:$126.8900
  • 900:$122.2900
  • 1500:$119.9900
A2T09D400-23NR6
DISTI # 841-A2T09D400-23NR6		NXP SemiconductorsRF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
RoHS: Compliant		0
  • 1:$150.6600
  • 5:$147.7300
  • 10:$142.8600
  • 25:$136.8100
  • 50:$134.9300
  • 100:$125.4900
  • 150:$122.6700
A2T09D400-23NR6
DISTI # A2T09D400-23NR6		NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant		6562
  • 1:$157.7700
  • 10:$145.8200
  • 25:$141.5400
Immagine Parte # Descrizione
A2T09D400-23NR6

Mfr.#: A2T09D400-23NR6

OMO.#: OMO-A2T09D400-23NR6

 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG., 28 V
A2T09D400-23NR6

Mfr.#: A2T09D400-23NR6

OMO.#: OMO-A2T09D400-23NR6-NXP-SEMICONDUCTORS

 RF MOSFET Transistors AIRFAST RF POWER LDMOS TRANSISTOR 716-960 MHz, 93 W AVG, 28 V
Disponibilità
Azione:
Available
Su ordine:
4000
Inserisci la quantità:
Il prezzo attuale di A2T09D400-23NR6 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
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