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IKW50N60DTPXKSA1

IKW50N60DTPXKSA1
Mfr. #:
IKW50N60DTPXKSA1
Produttore:
Infineon Technologies
Descrizione:
IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
IKW50N60DTPXKSA1 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
IKW50N60DTPXKSA1 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Infineon
Categoria di prodotto:
Transistor IGBT
RoHS:
Y
Tecnologia:
si
Pacchetto/custodia:
TO-247-3
Stile di montaggio:
Foro passante
Configurazione:
Separare
Tensione collettore-emettitore VCEO Max:
600 V
Tensione di saturazione collettore-emettitore:
1.6 V
Tensione massima dell'emettitore di gate:
20 V
Corrente continua del collettore a 25 C:
80 A
Pd - Dissipazione di potenza:
319.2 W
Temperatura di esercizio minima:
- 40 C
Temperatura massima di esercizio:
+ 175 C
Serie:
600V TRENCHSTOP
Confezione:
Tubo
Marca:
Tecnologie Infineon
Corrente di dispersione gate-emettitore:
100 nA
Tipologia di prodotto:
Transistor IGBT
Quantità confezione di fabbrica:
240
sottocategoria:
IGBT
Nome depositato:
TRENCHSTOP
Parte # Alias:
IKW50N60DTP SP001379678
Unità di peso:
0.213951 oz
Tags
IKW50N60D, IKW50N60, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IKW50N60DTP Series 600 V 80 A Through Hole Trench Field Stop IGBT - PG-TO247-3
***ineon SCT
600 V, 50 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 600V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 319.2W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pin
***ineon
The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. | Summary of Features: Lower total switching losses (E ts) i.e. better efficiency IGBT 7% lower E ts for switching speed of 8kHz 11% lower E ts for switching speed of 15kHz; Low speed dV/dt switching (<5V/ns); Low EMI; Improved cell design for higher reliability | Target Applications: Motor control; Air conditioning compressors; HVAC motor drives; UPS; Solar power converters
600V & 1200V TRENCHSTOP IGBTs
Infineon 600V & 1200V TRENCHSTOP™ IGBTs combines trench top-cell and field stop concept leads to significantly improve static and dynamic performance. A combination of IGBTs with a soft recovery Emitter Controlled-Diode further minimizes turn-on losses. A compromise between switching and conduction losses allows for high efficiency.Learn More
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Parte # Mfg. Descrizione Azione Prezzo
IKW50N60DTPXKSA1
DISTI # V99:2348_14664357		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A Tube344
  • 500:$3.1140
  • 250:$3.6090
  • 100:$3.7310
  • 10:$4.3880
  • 1:$5.6606
IKW50N60DTPXKSA1
DISTI # IKW50N60DTPXKSA1-ND		Infineon Technologies AGIGBT 600V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		216In Stock
  • 2640:$2.7444
  • 720:$3.4168
  • 240:$4.0137
  • 25:$4.6312
  • 10:$4.8990
  • 1:$5.4500
IKW50N60DTPXKSA1
DISTI # 27074052		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A Tube420
  • 5:$2.3137
IKW50N60DTPXKSA1
DISTI # 32341519		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A Tube344
  • 3:$5.6606
IKW50N60DTPXKSA1
DISTI # IKW50N60DTP		Infineon Technologies AGTrans IGBT Chip N-CH 600V 80A 3 TO-247 Tube (Alt: IKW50N60DTP)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 1200
  • 480:$0.7630
  • 240:$0.8175
IKW50N60DTPXKSA1
DISTI # IKW50N60DTPXKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 80A 3 TO-247 Tube - Rail/Tube (Alt: IKW50N60DTPXKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.3900
  • 1440:$2.4900
  • 960:$2.5900
  • 480:$2.6900
  • 240:$2.7900
IKW50N60DTPXKSA1
DISTI # SP001379678		Infineon Technologies AGTrans IGBT Chip N-CH 600V 80A 3 TO-247 Tube (Alt: SP001379678)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
IKW50N60DTPXKSA1
DISTI # 34AC1634		Infineon Technologies AGIGBT, SINGLE, 600V, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:319.2W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes184
  • 500:$3.2800
  • 250:$3.6600
  • 100:$3.8600
  • 50:$4.0600
  • 25:$4.2600
  • 10:$4.4500
  • 1:$5.2300
IKW50N60DTPXKSA1
DISTI # 726-IKW50N60DTPXKSA1		Infineon Technologies AGIGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
RoHS: Compliant		668
  • 1:$5.1800
  • 10:$4.4100
  • 100:$3.8200
  • 250:$3.6200
  • 500:$3.2500
IKW50N60DTPXKSA1
DISTI # IKW50N60DTP		Infineon Technologies AGTransistor: IGBT,600V,61A,159.6W,TO247-3209
  • 30:$3.2300
  • 10:$3.5900
  • 3:$4.0700
  • 1:$4.4100
IKW50N60DTPXKSA1
DISTI # 2781034		Infineon Technologies AGIGBT, SINGLE, 600V, 80A, TO-247193
  • 500:£2.4800
  • 250:£2.7600
  • 100:£2.9200
  • 10:£3.3600
  • 1:£4.3800
IKW50N60DTPXKSA1
DISTI # 2781034		Infineon Technologies AGIGBT, SINGLE, 600V, 80A, TO-247
RoHS: Compliant		184
  • 1000:$3.7000
  • 500:$3.7700
  • 250:$3.9800
  • 100:$4.2100
  • 10:$4.7600
  • 1:$5.0900
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Disponibilità
Azione:
668
Su ordine:
2651
Inserisci la quantità:
Il prezzo attuale di IKW50N60DTPXKSA1 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
5,18 USD
5,18 USD
10
4,41 USD
44,10 USD
100
3,82 USD
382,00 USD
250
3,62 USD
905,00 USD
500
3,25 USD
1 625,00 USD
A causa della scarsità di semiconduttori dal 2021, il prezzo inferiore è il prezzo normale prima del 2021. Si prega di inviare informazioni per confermare.
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