GS816118DD-250

GS816118DD-250
Mfr. #:
GS816118DD-250
Produttore:
GSI Technology
Descrizione:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
GS816118DD-250 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
GS816118DD-250 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore:
Tecnologia GSI
Categoria di prodotto:
SRAM
RoHS:
N
Dimensione della memoria:
18 Mbit
Organizzazione:
1 M x 18
Orario di accesso:
5.5 ns
Frequenza massima di clock:
250 MHz
Tipo di interfaccia:
Parallelo
Tensione di alimentazione - Max:
3.6 V
Tensione di alimentazione - Min:
2.3 V
Corrente di alimentazione - Max:
210 mA, 230 mA
Temperatura di esercizio minima:
0 C
Temperatura massima di esercizio:
+ 70 C
Stile di montaggio:
SMD/SMT
Pacchetto/custodia:
BGA-165
Confezione:
Vassoio
Tipo di memoria:
SDR
Serie:
GS816118DD
Tipo:
Conduttura/Flusso passante
Marca:
Tecnologia GSI
Sensibile all'umidità:
Tipologia di prodotto:
SRAM
Quantità confezione di fabbrica:
36
sottocategoria:
Memoria e archiviazione dati
Nome depositato:
SyncBurst
Tags
GS816118DD-25, GS816118DD-2, GS816118DD, GS816118D, GS81611, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 5.5ns/2.5ns 165-Pin FBGA
SyncBurst SRAMs
GSI Technology SyncBurst SRAMs are a broad portfolio of Synchronous Burst (SyncBurst™) SRAMs with fast clock rates and low power. SyncBurst SRAMs provide a "burst" of (typically) 2 to 4 words in response to a single clock signal. The devices' simplified interface is designed to use a data bus's maximum bandwidth. SyncBurst SRAMs are used in military, networking, industrial, automotive and medical imaging applications where a mid-range performance point is required.Learn More
Immagine Parte # Descrizione
GS816118DGT-150

Mfr.#: GS816118DGT-150

OMO.#: OMO-GS816118DGT-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DGT-250V

Mfr.#: GS816118DGT-250V

OMO.#: OMO-GS816118DGT-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGD-250V

Mfr.#: GS816118DGD-250V

OMO.#: OMO-GS816118DGD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-250IV

Mfr.#: GS816118DGT-250IV

OMO.#: OMO-GS816118DGT-250IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGT-333IV

Mfr.#: GS816118DGT-333IV

OMO.#: OMO-GS816118DGT-333IV

SRAM 1.8/2.5V 1M x 18 18M
GS816118DD-150

Mfr.#: GS816118DD-150

OMO.#: OMO-GS816118DD-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DD-250

Mfr.#: GS816118DD-250

OMO.#: OMO-GS816118DD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DD-250V

Mfr.#: GS816118DD-250V

OMO.#: OMO-GS816118DD-250V

SRAM 1.8/2.5V 1M x 18 18M
GS816118DGD-400

Mfr.#: GS816118DGD-400

OMO.#: OMO-GS816118DGD-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS816118DD-400

Mfr.#: GS816118DD-400

OMO.#: OMO-GS816118DD-400

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilità
Azione:
Available
Su ordine:
3000
Inserisci la quantità:
Il prezzo attuale di GS816118DD-250 è solo di riferimento, se si desidera ottenere il prezzo migliore, inviare una richiesta o inviare un'e-mail diretta al nostro team di vendita [email protected]
Prezzo di riferimento (USD)
Quantità
Prezzo unitario
est. Prezzo
1
14,46 USD
14,46 USD
25
13,43 USD
335,75 USD
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