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SI2356DS-T1-GE3

SI2356DS-T1-GE3
Mfr. #:
SI2356DS-T1-GE3
Produttore:
Vishay
Descrizione:
MOSFET N-CH 40V 4.3A SOT-23
Ciclo vitale:
Nuovo da questo produttore.
Scheda dati:
SI2356DS-T1-GE3 Scheda dati
Consegna:
DHL FedEx Ups TNT EMS
Pagamento:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Maggiori informazioni:
SI2356DS-T1-GE3 maggiori informazioni
Attributo del prodotto
Valore attributo
Produttore
VISHAY
categoria di prodotto
FET - Single
Serie
TrinceaFETR
Confezione
Imballaggio alternativo Digi-ReelR
Unità di peso
0.050717 oz
Stile di montaggio
SMD/SMT
Nome depositato
TrenchFET
Pacchetto-Custodia
TO-236-3, SC-59, SOT-23-3
Tecnologia
si
Temperatura di esercizio
-55°C ~ 150°C (TJ)
Tipo di montaggio
Montaggio superficiale
Numero di canali
1 Channel
Pacchetto-dispositivo-fornitore
TO-236
Configurazione
Separare
Tipo FET
MOSFET N-Channel, ossido di metallo
Potenza-Max
1.7W
Tipo a transistor
1 N-Channel
Drain-to-Source-Voltage-Vdss
40V
Ingresso-Capacità-Ciss-Vds
370pF @ 20V
Funzione FET
Standard
Corrente-Continuo-Scarico-Id-25°C
4.3A (Tc)
Rds-On-Max-Id-Vgs
51 mOhm @ 3.2A, 10V
Vgs-th-Max-Id
1.5V @ 250μA
Gate-Carica-Qg-Vgs
13nC @ 10V
Pd-Power-Dissipazione
1.7 W
Massima temperatura di esercizio
+ 150 C
Temperatura di esercizio minima
- 55 C
Tempo di caduta
53 ns
Ora di alzarsi
52 ns
Vgs-Gate-Source-Voltage
12 V
Id-Continuo-Scarico-Corrente
4.3 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Sorgente-Soglia-Tensione
1.5 V
Rds-On-Drain-Source-Resistenza
56 mOhms
Polarità del transistor
Canale N
Tempo di ritardo allo spegnimento tipico
18 ns
Tempo di ritardo all'accensione tipico
10 ns
Qg-Gate-Carica
8.1 nC
Transconduttanza diretta-Min
13 S
Tags
SI235, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si2356DS Series 40 V 3.2 A 51 mOhm Surface Mount N-Channel Mosfet - SOT-23-3
***ical
Trans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R
***ark
N-Ch MOSFET SOT-23 copper 40V 51mohm @ 10V
***et
N-CH MOSFET SOT-23 COPPER 40V 51MOHM @ 10V
***i-Key
MOSFET N-CH 40V 4.3A SOT-23
***ronik
N-CHANNEL-FET 4,3A 40V SOT23
***ied Electronics & Automation
40V .051ohm@10V 4.3A N-Ch T-FET
***
P-CHANNEL 40-V (D-S)
***ment14 APAC
MOSFET, N-CH, 40V, 4.3A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.5V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2016)
***nell
MOSFET, N-CH, 40V, 4.3A, SOT-23; Biegunowość tranzystora:Kanał N; Prąd ciągły Id drenu:4.3A; Napięcie drenu / źródła Vds:40V; Rezystancja przewodzenia Rds(on):0.042ohm; Napięcie Vgs pomiaru Rds(on):10V; Napięcie progowe Vgs:1.5V; Straty mocy Pd:1.7W; Rodzaj obudowy tranzystora:SOT-23; Liczba pinów:3piny/-ów; Temperatura robocza, maks.:150°C; Asortyment produktów:-; Kwalifikacja motoryzacyjna:-; Wskaźnik wrażliwości na wilgoć MSL:MSL 1 - nieograniczone; Substancje SVHC:No SVHC (20-Jun-2016)
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Parte # Mfg. Descrizione Azione Prezzo
SI2356DS-T1-GE3
DISTI # V72:2272_09216727		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
RoHS: Compliant		2757
  • 1000:$0.1356
  • 500:$0.1789
  • 250:$0.2021
  • 100:$0.2246
  • 25:$0.3306
  • 10:$0.3674
  • 1:$0.5266
SI2356DS-T1-GE3
DISTI # V36:1790_09216727		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
RoHS: Compliant		0
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		87569In Stock
    • 1000:$0.1289
    • 500:$0.1718
    • 100:$0.2291
    • 10:$0.3370
    • 1:$0.4200
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		87569In Stock
    • 1000:$0.1289
    • 500:$0.1718
    • 100:$0.2291
    • 10:$0.3370
    • 1:$0.4200
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CH 40V 4.3A SOT-23
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		87000In Stock
    • 75000:$0.0890
    • 30000:$0.0925
    • 15000:$0.1008
    • 6000:$0.1077
    • 3000:$0.1147
    SI2356DS-T1-GE3
    DISTI # 32318889    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 3.2A 3-Pin SOT-23 T/R
    RoHS: Compliant    		2757
    • 76:$0.5266
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Cut TR (SOS) (Alt: SI2356DS-T1-GE3)
    RoHS: Not Compliant
    Min Qty: 1
    Container: Cut Tape    		Americas - 6000
    • 1500:$0.0988
    • 750:$0.1018
    • 375:$0.1051
    • 188:$0.1085
    • 94:$0.1122
    • 47:$0.1161
    • 1:$0.1204
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 3000
    • 30000:€0.0859
    • 18000:€0.0929
    • 12000:€0.0999
    • 6000:€0.1169
    • 3000:€0.1709
    SI2356DS-T1-GE3
    DISTI # SI2356DS-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R (Alt: SI2356DS-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Tape and Reel    		Asia - 0
      SI2356DS-T1-GE3
      DISTI # SI2356DS-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 40V 4.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2356DS-T1-GE3)
      RoHS: Not Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.0839
      • 18000:$0.0869
      • 12000:$0.0889
      • 6000:$0.0929
      • 3000:$0.0959
      SI2356DS-T1-GE3
      DISTI # 05AC9483      		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes27000
      • 1:$0.1370
      • 3000:$0.1370
      SI2356DS-T1-GE3
      DISTI # 01AC4982      		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.5V,Power RoHS Compliant: Yes8890
      • 1000:$0.1550
      • 500:$0.1960
      • 250:$0.2340
      • 100:$0.2720
      • 50:$0.3280
      • 25:$0.3830
      • 1:$0.4810
      SI2356DS-T1-GE3
      DISTI # 70459514      		Vishay Siliconix40V .051ohm@10V 4.3A N-Ch T-FET
      RoHS: Compliant      		0
      • 25:$0.1880
      • 250:$0.1790
      • 500:$0.1700
      • 750:$0.1610
      • 1000:$0.1340
      SI2356DS-T1-GE3
      DISTI # 78-SI2356DS-T1-GE3      		Vishay IntertechnologiesMOSFET 40V Vds 12V Vgs SOT-23
      RoHS: Compliant      		76574
      • 1:$0.4300
      • 10:$0.2930
      • 100:$0.1970
      • 500:$0.1580
      • 1000:$0.1190
      • 3000:$0.1090
      • 6000:$0.1020
      • 9000:$0.0950
      • 24000:$0.0880
      SI2356DS-T1-GE3
      DISTI # TMOSS6841      		Vishay IntertechnologiesN-CHANNEL-FET 4,3A 40V SOT23
      RoHS: Compliant      		Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$0.1301
      • 6000:$0.1226
      • 12000:$0.1152
      • 18000:$0.1041
      • 24000:$0.1003
      SI2356DS-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 12V Vgs SOT-23
      RoHS: Compliant      		Americas - 54000
        SI2356DS-T1-GE3
        DISTI # 2679679        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-2315000
        • 9000:£0.0763
        • 3000:£0.0889
        SI2356DS-T1-GE3
        DISTI # 2679679        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23
        RoHS: Compliant        		15000
        • 12000:$0.1260
        • 9000:$0.1300
        • 6000:$0.1310
        • 3000:$0.1350
        SI2356DS-T1-GE3
        DISTI # 2646369        		Vishay IntertechnologiesMOSFET, N-CH, 40V, 4.3A, SOT-23
        RoHS: Compliant        		8230
        • 1000:$0.1950
        • 500:$0.2590
        • 100:$0.3460
        • 10:$0.5080
        • 1:$0.6300
        Immagine Parte # Descrizione
        SI2356DS-T1-GE3

        Mfr.#: SI2356DS-T1-GE3

        OMO.#: OMO-SI2356DS-T1-GE3

        		 MOSFET 40V Vds 12V Vgs SOT-23
        SI2356DS-T1-GE3

        Mfr.#: SI2356DS-T1-GE3

        OMO.#: OMO-SI2356DS-T1-GE3-VISHAY

        		 MOSFET N-CH 40V 4.3A SOT-23
        SI2356DS-T1-GE3-CUT TAPE

        Mfr.#: SI2356DS-T1-GE3-CUT TAPE

        OMO.#: OMO-SI2356DS-T1-GE3-CUT-TAPE-1190

        		 Nuovo e originale
        Disponibilità
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        Available
        Su ordine:
        5500
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