We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| Parte # | Mfg. | Descrizione | Azione | Prezzo |
|---|---|---|---|---|
| IPB050N06NGATMA1 DISTI # IPB050N06NGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TO-263 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| IPB050N06NGATMA1 DISTI # IPB050N06NGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TO-263 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| IPB050N06NGATMA1 DISTI # IPB050N06NGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 60V 100A TO-263 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| IPB050N06NGATMA1 DISTI # IPB050N06NGATMA1 | Infineon Technologies AG | N-KANAL POWER MOS - Bulk (Alt: IPB050N06NGATMA1) Min Qty: 269 Container: Bulk | Americas - 0 |
|
| IPB050N06N G DISTI # 726-IPB050N06NG | Infineon Technologies AG | MOSFET N-Ch 60V 100A D2PAK-2 RoHS: Compliant | 0 | |
| IPB050N06NGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant | 19143 |
|
| Immagine | Parte # | Descrizione |
|---|---|---|
|
Mfr.#: IPB050N06N G OMO.#: OMO-IPB050N06N-G-1190 |
MOSFET N-Ch 60V 100A D2PAK-2 |
|
|
Mfr.#: IPB050N06NG OMO.#: OMO-IPB050N06NG-1190 |
Nuovo e originale |
|
Mfr.#: IPB050N06NGATMA1 |
MOSFET N-CH 60V 100A TO-263 |
